Method for growing gallium nitride film on silicon substrate

Abstract

The invention discloses a method for growing a gallium nitride film on a silicon substrate. According to the method for growing the gallium nitride film on the silicon substrate, a nitride composite buffer layer is epitaxially grown on the Si substrate, and the nitride composite buffer layer can relieve lattice mismatch and prevent a reflow etching reaction. A group of superlattices are grown on aGaN transition layer, and the superlattices can release part of tensile stress and can filter part of threading dislocation. By adopting the method, the crystal quality of a GaN epitaxial film material can be significantly improved, surface cracks are eliminated, and the GaN epitaxial film material which can be used for device development and application is obtained.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, and in particular refers to a gallium nitride (GaN) thin film material with no cracks on the surface grown by heterogeneous epitaxial growth on a silicon (Si) substrate by using a nitride compound buffer layer method. Background technique [0002] As a typical representative of the third-generation wide bandgap semiconductor material, GaN material has outstanding advantages such as large bandgap width, high electron drift speed, high pressure resistance, high temperature resistance, corrosion resistance and radiation resistance, and is especially suitable for the development and production of high temperature and high frequency large Power radio frequency microwave devices and power electronic devices have broad application prospects in the fields of wireless communication, radar, and semiconductor lighting. [0003] However, due to the lack of homogeneous substrates for GaN materials, het...

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Problems solved by technology

[0004] However, since the lattice constant and thermal expansion coefficient of the Si substrate and GaN are very different, the lattice mismatch and thermal mismatch reach 17% and 56%, respectively, resulting in a large gap during the growth of GaN epitaxial materials. The tensile stress of the GaN epitaxial material will generate a large number of dislocations and even cracks, which will seriously reduce the quality of the GaN epitaxial thin film material.

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