Light-emitting diode epitaxial wafer and preparation method thereof

Abstract

The invention discloses a light-emitting diode epitaxial wafer and a preparation method thereof, belonging to the field of light-emitting diode production. The alternately stacked AlGaN sub-layers and the first GaN sub-layer can release certain stress during the growth process, and less dislocation defects will be accumulated in the first composite layer. The buffer layer also includes a second composite layer stacked on the first composite layer, and the structure of the second composite layer can be alternately stacked second GaN sublayers and MgN sublayers, alternately stacked second GaN sublayers and BN sublayers . Mg atoms and B atoms in the BN sublayer have small particle sizes, which can fill the vacancies generated by defects and dislocations in the crystal during growth, thereby reducing the formation of dislocations and defects, improving the crystal quality of the buffer layer, and finally obtaining The luminous efficiency of the light-emitting diode epitaxial wafer is also improved.

Description

technical field [0001] The invention relates to the field of light-emitting diode production, in particular to a light-emitting diode epitaxial wafer and a preparation method thereof. Background technique [0002] LED (English: Light Emitting Diode, Chinese: Light Emitting Diode), a light emitting diode is a semiconductor electronic component that can emit light. As an efficient, environmentally friendly and green new solid-state lighting source, it is being rapidly and widely used, such as traffic lights, car interior and exterior lights, urban landscape lighting, mobile phone backlight, etc. Improving the luminous efficiency of chips is the goal that LEDs are constantly pursuing. [0003] The epitaxial wafer of a light emitting diode usually includes a substrate and an AlN layer, a GaN buffer layer, an n-type GaN layer, a multi-quantum well layer and a p-type GaN layer grown sequentially on the substrate. The GaN buffer layer can alleviate the lattice mismatch between the...

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Problems solved by technology

[0004] However, when the GaN buffer layer itself grows on the AlN layer, it will also accumulate some dislocation defects, and these dislocation defects will extend to structures such as the n-type GaN layer, resulting in the final n-type GaN layer, multiple quantum well layer and p The crystal quality of the GaN layer has limited improvement

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