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Nitride light-emitting diode structure and preparation method thereof

A technology of light-emitting diodes and nitrides, which is applied in the manufacture of semiconductor/solid-state devices, semiconductor devices, electrical components, etc., can solve the problems of slow cost reduction of LED devices, restrictions on the market penetration rate of LED devices, and difficulties in large-scale production. Ease of chip handling, reduction of lattice defects, and reduction of manufacturing costs

Active Publication Date: 2015-09-09
ANHUI SANAN OPTOELECTRONICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, these types of substrates all have the inherent problems of high prices and difficulty in large-area production. Although people have made a lot of optimizations for epitaxial growth and subsequent LED device manufacturing processes to save manufacturing costs, the cost of LED devices has declined rapidly. The problem of slowness, which greatly restricts the market penetration rate of LED devices, so it is necessary to find a mature low-cost substrate and the design of the epitaxial underlying structure required for the growth of the substrate

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  • Nitride light-emitting diode structure and preparation method thereof
  • Nitride light-emitting diode structure and preparation method thereof

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Embodiment 1

[0027] See attached figure 1 , provide a glass substrate 1, the glass substrate 1 is a patterned substrate or a non-patterned substrate, this embodiment is preferably a high temperature resistant (above 1300 ° C), patterned glass substrate; using MOCVD method on the glass substrate 1 The surface is sequentially epitaxially grown with a SiAlN layer 21 with a thickness of 15-300 angstroms and an AlGaN layer 22 with a thickness of 15-300 angstroms to form a buffer layer 2, a non-doped gallium nitride layer 3, an N-type GaN layer 4, and a quantum well structure Layer 5, P-type GaN layer 6. Wherein, the N-type GaN layer 4 can be selected from at least one of C, Si, Ge, Sn, Pb, O, S, Se, Te, Po as a dopant; the P-type GaN layer 6 can be selected from One of Be, Mg, Ca, Sr, and Ba is a dopant.

[0028] A method for preparing a nitride light-emitting diode provided by the present invention includes: providing a patterned glass substrate 1 resistant to high temperature (above 1300° C...

Embodiment 2

[0033] See attached figure 2 The difference between this embodiment and Embodiment 1 is that the buffer layer 2 is a cycle structure composed of a SiAlN layer 21 and an AlGaN layer 22, and its cycle number is 3. The specific method for growing the nitride light-emitting diode in this embodiment is as follows:

[0034] (1) Provide a high temperature resistant, patterned glass substrate;

[0035] (2) forming a SiAlN layer 21 on the surface of the substrate;

[0036] (3) Continue to grow the AlGaN layer 22 on the SiAlN layer 21 .

[0037] (4) Repeat steps (2) and (3) two more times.

[0038] (5) Continue to grow the non-doped gallium nitride layer 3 , the N-type GaN layer 4 , the quantum well structure layer 5 , and the P-type GaN layer 6 on the surface of the wafer after step (4).

[0039]Among them, since the material properties of the SiAlN layer 21 and the AlGaN layer 22 in the buffer layer structure 2 are sequentially close to those of the subsequent gallium nitride semi...

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Abstract

The invention provides a nitride light-emitting diode structure and a preparation method. The preparation method comprises the following steps: providing a glass substrate; stacking a buffer layer structure on the glass substrate, wherein the buffer layer structure is composed of cycles of SiAlN layers and AlGaN layers, and the number of cycles is 1-5; and then, growing a non-doped gallium nitride layer, an N-type layer, a quantum well structure layer and a P-type layer sequentially. According to the invention, the substrate is made of glass which is cheap and technologically mature, and the SiAlN and AlGaN buffer layer is grown on the substrate. Therefore, the constant of lattice mismatch between the substrate and an epitaxial layer is improved, and the photoelectric performance of light-emitting diodes is improved.

Description

technical field [0001] The invention relates to a nitride light-emitting diode structure and a preparation method thereof. Background technique [0002] Light Emitting Diode (English for Light Emitting Diode, referred to as LED) is a solid-state semiconductor diode light-emitting device, which is widely used in lighting fields such as indicator lights and display screens. [0003] At present, the method of preparing LED wafers is mainly realized by Metal-organic Chemical Vapor Deposition (MOCVD for short), and the process is briefly described as follows: / Si substrate / SiC substrate) is placed on the groove of the graphite carrier (Wafer carrier), and it is introduced into the MOCVD reaction chamber together with the graphite carrier, by heating the temperature of the reaction chamber to the set temperature, and Cooperate with the introduction of organometallic compounds and group V gases, so that they break chemical bonds on the substrate and repolymerize to form the LED ep...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/12H01L33/00
CPCH01L33/007H01L21/02145H01L21/02178H01L21/022H01L33/0066H01L33/06H01L33/12H01L33/30H01L33/32
Inventor 谢祥彬宋长伟张家宏林兓兓
Owner ANHUI SANAN OPTOELECTRONICS CO LTD
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