GaN-based light emitting diode epitaxial wafer and manufacturing method therefor
A technology of light-emitting diodes and manufacturing methods, which is applied in the direction of electrical components, circuits, semiconductor devices, etc., can solve the problems of narrow growth window and limited effect of InGaN stress release layer, and achieve the goal of increasing lateral expansion capability, reducing stress, and improving photoelectric performance Effect
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[0027] In order to make the objectives, technical solutions, and advantages of the present invention clearer, the embodiments of the present invention will be described in further detail below in conjunction with the accompanying drawings.
[0028] figure 1 It is a schematic structural diagram of a GaN-based light-emitting diode epitaxial wafer provided by an embodiment of the present invention, see figure 1 , The GaN-based light-emitting diode epitaxial wafer includes: a substrate 100, a buffer layer 101, a three-dimensional growth layer 102, a u-GaN layer 103, an n-type layer 104, an n-type current spreading layer 105, a stress The release layer 106, the multiple quantum well layer 107 and the p-type layer 108. The n-type current spreading layer 105 includes a first sub-layer 151 covering the n-type layer 104 and a second sub-layer 152 covering the first sub-layer 151 , The first sublayer 151 is an AlGaN layer, the second sublayer 152 is a superlattice structure formed by a GaN ...
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