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Nitride semiconductor device

A technology of nitride semiconductors and devices, which is applied in semiconductor devices, semiconductor/solid-state device manufacturing, electrical components, etc., and can solve problems such as the deterioration of the interface state between the gate insulating film and the semiconductor layer

Inactive Publication Date: 2006-01-18
KK TOSHIBA
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Problems solved by technology

However, because the thermal expansion coefficient of the silicon nitride (SiN) film is different from that of the aluminum oxide (Al 2 o 3 ) film or aluminum gallium nitride / gallium nitride (AlGaN / GaN) layer has a large difference, so there is a problem that the state of the interface between the gate insulating film and the semiconductor layer deteriorates due to the heat treatment process

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Embodiment Construction

[0036] Embodiments of a nitride semiconductor device according to the present invention will be explained below with reference to the drawings. The same reference numerals are used in the various figures to denote the same parts and components.

[0037] figure 1 is a cross-sectional view diagrammatically showing the structure of the nitride semiconductor device according to the first embodiment of the present invention.

[0038] A nitride semiconductor device according to the first embodiment of the present invention includes an undoped gallium nitride (GaN) layer 1 serving as a channel layer, an undoped gallium nitride (GaN) layer serving as a barrier layer formed on the gallium nitride (GaN) layer 1 Aluminum gallium nitride (AlGaN) layer 2, aluminum nitride (AlN) film 3 used as a lower layer of the gate insulating film formed on aluminum gallium nitride (AlGaN) layer 2, aluminum nitride (AlN) film 3 on aluminum nitride (AlGaN) film 3 Aluminum oxide (Al 2 o 3 ) film 4, th...

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Abstract

A nitride semiconductor device according to one embodiment of the present invention comprises: a non-doped first aluminum gallium nitride (AlxGa1-xN (0<=x<=1)) layer which is formed as a channel layer; a non-doped or n type second aluminum gallium nitride (AlyGa1-yN (0<=x<=1,x H01L 29 / 78 11 16 3 2005 / 7 / 13 1722465 2006 / 1 / 18 000000000 Tokyo Shibaura Electric Co. Japan Saito Wataru Omura Ichiro yu hui 72002 NTD Patent & Trademark Agency Ltd. Units 1805-6, 18th Floor, Greenfield Tower, Concordia Plaza, No.1 Science Museum Road, Tsimshatsui, east, Kowloon, Hong Kong 100045 Japan 2004 / 7 / 14 207409 / 2004

Description

[0001] Cross References to Related Applications [0002] This application relates to the main body of Japanese patent application 2004-207409 filed on July 14, 2004 in Japan. According to the Paris Convention, this application claims the priority of the above patent application, and the content of the above Japanese patent application is hereby incorporated by reference. technical field [0003] The present invention relates to nitride semiconductor devices, and in particular, to transverse power FETs used for high-frequency signal amplification, power control, and the like. Background technique [0004] Because electronic devices including aluminum gallium nitride / gallium nitride (AlGaN / GaN) heterostructures have higher critical electric fields than conventional electronic devices including gallium arsenide (GaAs) or silicon (Si) as host materials, and are used For high-frequency signal amplification, power control, ...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/78H01L21/336H01L21/338H01L29/06H01L29/41H01L29/812
CPCH01L29/7786H01L29/2003H01L29/402H01L29/404H01L29/432H01L29/517H01L29/41725H01L29/1066
Inventor 斋藤涉大村一郎
Owner KK TOSHIBA
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