Aluminum gallium nitride (AlGaN)base solar-blind ultraviolet detector and preparation method thereof

An ultraviolet detector, AlGaN technology, applied in semiconductor devices, final product manufacturing, sustainable manufacturing/processing, etc., can solve the problems of low quality of AlGaN material films, restricting the detection performance of structural detectors, and large dark current. , to achieve the effect of improving quantum efficiency and responsivity, reducing avalanche breakdown voltage threshold, and increasing electric field

Active Publication Date: 2017-07-18
CHANGSHU INSTITUTE OF TECHNOLOGY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] However, due to the low quality of the AlGaN material film prepared by the prior art, there are a large number of defects in the interface between the AlGaN material and the metal deposited on the surface when it forms a Schottk...

Method used

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  • Aluminum gallium nitride (AlGaN)base solar-blind ultraviolet detector and preparation method thereof

Examples

Experimental program
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Embodiment 1

[0031] Example 1, such as figure 1 As shown, the AlGaN-based solar-blind ultraviolet detector involved in this embodiment includes a patterned C-plane oriented sapphire substrate 101, an AlN nucleation layer 102, an Al x1 Ga 1-x1 N buffer layer 103, n-type Al x2 Ga 1-x2 N layer 104, non-doped i-type Zn y1 Mg 1-y1 O absorption layer 105, n-type ZnO / Zn y2 Mg 1-y2 O superlattice separation layer 106, non-doped i-type Zn y3 Mg 1-y3 O multiplication layer 107, p-type Al x3 Ga 1-x3 N layer 108, p-type GaN layer 109, in n-type Al x2 Ga 1-x2 The n-type ohmic electrode 110 drawn out from the N layer 104 and the p-type ohmic electrode 111 drawn out on the p-type GaN layer 109 . The thickness of the AlN nucleation layer 102 is 30 nm, and the specific thickness of the nucleation layer can be adjusted according to actual needs. al x1 Ga 1-x1 The thickness of the N buffer layer 103 is 500 nm, and x1=0.35 therein. n-type Al x2 Ga 1-x2 The thickness of the N layer 104 is 800...

Embodiment 2

[0044] Example 2, such as figure 1 As shown, the AlGaN-based solar-blind ultraviolet detector involved in this embodiment includes a patterned C-plane oriented sapphire substrate 101, an AlN nucleation layer 102, an Al x1 Ga 1-x1 N buffer layer 103, n-type Al x2 Ga 1-x2 N layer 104, non-doped i-type Zn y1 Mg 1-y1 O absorption layer 105, n-type ZnO / Zn y2 Mg 1-y2 O superlattice separation layer 106, non-doped i-type Zn y3 Mg 1-y3 O multiplication layer 107, p-type Al x3 Ga 1-x3 N layer 108, p-type GaN layer 109, in n-type Al x2 Ga 1-x2 The n-type ohmic electrode 110 drawn out from the N layer 104 and the p-type ohmic electrode 111 drawn out on the p-type GaN layer 109 . The thickness of the AlN nucleation layer 102 is 20 nm, and the specific thickness of the nucleation layer can be adjusted according to actual needs. al x1 Ga 1-x1 The thickness of the N buffer layer 103 is 200 nm, and x1=0.4 therein. n-type Al x2 Ga 1-x2 The thickness of the N layer 104 is 500n...

Embodiment 3

[0045] Example 3, such as figure 1 As shown, the AlGaN-based solar-blind ultraviolet detector involved in this embodiment includes a patterned C-plane oriented sapphire substrate 101, an AlN nucleation layer 102, an Al x1 Ga 1-x1 N buffer layer 103, n-type Al x2 Ga 1-x2 N layer 104, non-doped i-type Zn y1 Mg 1-y1 O absorption layer 105, n-type ZnO / Zn y2 Mg 1-y2 O superlattice separation layer 106, non-doped i-type Zn y3 Mg 1-y3 O multiplication layer 107, p-type Al x3 Ga 1-x3 N layer 108, p-type GaN layer 109, in n-type Al x2 Ga 1-x2 The n-type ohmic electrode 110 drawn out from the N layer 104 and the p-type ohmic electrode 111 drawn out on the p-type GaN layer 109 . The thickness of the AlN nucleation layer 102 is 50 nm, and the specific thickness of the nucleation layer can be adjusted according to actual needs. al x1 Ga 1-x1 The thickness of the N buffer layer 103 is 400 nm, and x1=0.5 therein. n-type Al x2 Ga 1-x2The thickness of the N layer 104 is 1000n...

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Abstract

The invention discloses an aluminum gallium nitride (AlGaN) base solar-blind ultraviolet detector. The aluminum gallium nitride (AlGaN) base solar-blind ultraviolet detector comprises a sapphire substrate, an A1N nucleation layer, an Alx1Ga1-x1N buffer layer, an n-type Alx2Gal-x2N layer, a non-doped i-type Zny1Mg1-y1O absorption layer, an n-type ZnO/Zny2Mg1-y2O superlattice separation layer, a non-doped i-type Zny3Mg1-y3O multiplication layer, a p-type Alx3Ga1-x3N layer, and a p-type GaN layer. An n-type ohmic electrode is led out from the n-type Alx2Gal-x2N layer, and a p-type ohmic electrode is led out from the p-type GaN layer. The invention also discloses the preparation method the aluminum gallium nitride (AlGaN)base solar-blind ultraviolet detector. The aluminum gallium nitride (AlGaN) base solar-blind ultraviolet detector is capable of improving the solar-blind ultraviolet detector avalanche multiplication factor and the responsibility of the detector.

Description

technical field [0001] The invention relates to a solar-blind ultraviolet detector and a preparation method thereof, in particular to an aluminum gallium nitrogen-based solar-blind ultraviolet detector and a preparation method thereof, belonging to the field of semiconductor optoelectronic devices. Background technique [0002] Ultraviolet photodetectors have important application value and development prospects in both military and civilian applications, such as ultraviolet warning and guidance, detection of hydrocarbon combustion flames, detection of biochemical genes, research in ultraviolet astronomy, short-distance communication and skin diseases treatment etc. GaN-based semiconductor ternary compound Al x Ga 1-x The energy band gap of the N material can be adjusted by changing the Al composition x, so that the corresponding absorption wavelength is between 200-365nm, which just covers the solar spectrum blind zone (220-290nm) caused by the ozone layer absorbing ultra...

Claims

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Application Information

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IPC IPC(8): H01L31/0352H01L31/032H01L31/105H01L31/18
CPCH01L31/032H01L31/035263H01L31/105H01L31/18H01L31/1848H01L31/1852Y02E10/544Y02P70/50
Inventor 王书昶张惠国况亚伟郭文华冯金福
Owner CHANGSHU INSTITUTE OF TECHNOLOGY
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