A kind of aluminum gallium nitrogen based solar-blind ultraviolet detector and preparation method thereof

Abstract

The invention discloses an aluminum gallium nitrogen-based solar blind ultraviolet detector and a production method thereof. The aluminum gallium nitrogen-based solar blind ultraviolet detector comprises a sapphire substrate, an A1N nucleating layer, an A1<x1>Ga<1-x1>N buffer layer, an n-type A1<x2>Ga<1-x2>N layer, an undoped i-type A1<x3>Ga<1-x3>N absorbing layer, an n-type A1<X4>In<y1>Ga<1-x4-y1>N / A1<x5>In<y2>Ga<1-x5-y2>N superlattice separating layer, an undoped i-type A1<x6>Ga<1-x6>N multiplication layer, a p-type A1<x7>Ga<1-x7>N layer and a p-type GaN layer which are sequentially arranged from the bottom up. An n-type ohmic electrode leads from the n type A1<x2>Ga<1-x2>N layer, and a p type ohmic electrode leads from the p type GaN layer. According to the arrangement, the absorbing layer and the multiplication layer are separated by the multi-cycle n type A1<X4>In<y1>Ga<1-x4-y1>N / A1<x5>In<y2>Ga<1-x5-y2>N superlattice separating layer, the electric field of the multiplication layer is increased, thus allowing uniform avalanche multiplication to occur under the high electric field, and avalanche multiplication factors of the solar blind ultraviolet detector are increased.

Description

technical field [0001] The invention relates to the field of semiconductor optoelectronic devices, in particular to an aluminum gallium nitrogen-based solar-blind ultraviolet detector and a preparation method thereof. Background technique [0002] Gallium nitride-based semiconductor materials mainly include binary compounds GaN, InN, AlN of group III and group V elements, ternary compounds InGaN, AlGaN, AlInN and quaternary compounds AlInGaN, which have a large band gap, high thermal conductivity, and High temperature, radiation resistance, acid and alkali resistance, high strength and high hardness and other characteristics, in high-brightness blue, green, purple, ultraviolet and white light-emitting diodes (LEDs), blue and purple lasers and radiation resistance, high temperature resistance, high-power microwave devices And other fields have a wide range of application potential and good market prospects. Ternary compound Al x Ga 1-x The energy band gap of N can be adjus...

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Problems solved by technology

[0005] However, due to the low quality of the AlGaN material film prepared by the prior art, there are a large number of defects in the interface between the AlGaN material and the metal deposited on the surface when it forms a Schottky junction, which makes the active region thinner and the tunneling mechanism is obvious, resulting in dark The current is very large, which seriously restricts the improvement of the detection performance of this type of structure detector [reference: AlGaNSchottkyDiodesforDetectorApplicationsintheUVWavelengthRange.IEEETrans.ElectronDevices56, 2833(2009).]

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