Magnesium-doped zinc oxide magnetron sputtering target material and preparation method thereof

A technology of magnetron sputtering and zinc oxide, which is applied in the direction of sputtering coating, metal material coating process, vacuum evaporation coating, etc., can solve the problems of high equipment requirements, increased density, high threshold of use, etc., and achieve favorable Effects of industrialized production, reduction of preparation cost and improvement of production efficiency

Pending Publication Date: 2021-04-30
森祥(宁波)新材料有限公司
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] However, the above-mentioned targets and their preparation methods still have disadvantages: (1) The sintering temperature of the target is relatively high, and excessively high sintering temperature requires high equipment, which increases the cost of target preparation, and also leads to over-burning The phenomenon occurs, which is not conducive to the improvement of density; (2) The resistance of the target is too high, and the film can only be coated by radio frequency magnetron sputtering, and the cost of radio frequency power supply is much higher than that of intermediate frequency and DC power supply, and the deposition rate is also lower
[0008] The above targets and their preparation methods still have deficiencies: (1) The method of atmosphere sintering or hot pressing sintering requires vacuum sintering furnace or hot pressing furnace. Cost; (2) The above two methods do not explain the electrical conductivity of the target, and the electrical conductivity of the target is one of the important performance indicators. The level of electrical conductivity will affect the working power of magnetron coating sputtering

Method used

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  • Magnesium-doped zinc oxide magnetron sputtering target material and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0038] (1) Weigh high-purity zinc oxide powder, high-purity magnesium oxide powder and the third oxide powder and mix to form an atomic ratio mixture xMgO (1-x-y)ZnO yMOn, where x=0.1, y =0.05; configure ethanol mixed solution, wherein the deionized water content is 10wt%; according to the mass ratio of mixed solution and powder is 3:1, mix the powder and pour it into the mixed solution to form a slurry;

[0039] (2) Place the slurry in a planetary ball mill and mix it for 15 hours, where the ratio of balls to materials is 5:1; take out the slurry after ball milling, dry it at 80°C, and collect the dried powder , grind, and pass through an 80-mesh sieve to obtain a powder for molding;

[0040] (3) The obtained powder is placed in a rubber sleeve mold, and molded in a cold isostatic press under the conditions of 160MPa and pressure holding for 30s to form a green body;

[0041] (4) Put the formed body into a box-type resistance furnace, raise the temperature to the first sinte...

Embodiment 2

[0044] (1) Weigh high-purity zinc oxide powder, high-purity magnesium oxide powder and the third oxide powder and mix to form an atomic ratio mixture xMgO·(1-x-y)ZnO·yMOn, where x=0.2, y =0.01; configure ethanol mixed solution, wherein the deionized water content is 20wt%; according to the mass ratio of mixed solution and powder is 3:1, mix the powder and pour it into the mixed solution to form a slurry;

[0045] (2) Place the slurry in a planetary ball mill and mix it for 15 hours, where the ratio of balls to materials is 5:1; take out the slurry after ball milling, dry it at 80°C, and collect the dried powder , grind, and pass through an 80-mesh sieve to obtain a powder for molding;

[0046] (3) The obtained powder is placed in a rubber sleeve mold, and molded in a cold isostatic press under the conditions of 160MPa and pressure holding for 30s to form a green body;

[0047] (4) Put the formed body into a box-type resistance furnace, raise the temperature to the first sinte...

Embodiment 3

[0050] (1) Weigh high-purity zinc oxide powder, high-purity magnesium oxide powder and the third oxide powder and mix to form an atomic ratio mixture xMgO (1-x-y)ZnO yMOn, where x=0.3, y =0.05; configure ethanol mixed solution, wherein the deionized water content is 10wt%; according to the mass ratio of mixed solution and powder is 3:1, mix the powder and pour it into the mixed solution to form a slurry;

[0051] (2) Place the slurry in a planetary ball mill and mix it for 15 hours, where the ratio of balls to materials is 5:1; take out the slurry after ball milling, dry it at 80°C, and collect the dried powder , grind, and pass through an 80-mesh sieve to obtain a powder for molding;

[0052] (3) The obtained powder is placed in a rubber sleeve mold, and molded in a cold isostatic press under the conditions of 160MPa and pressure holding for 30s to form a green body;

[0053] (4) Put the formed body into a box-type resistance furnace, raise the temperature to the first step ...

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Abstract

The invention relates to the technical field of photoelectric materials, and discloses a magnesium-doped zinc oxide magnetron sputtering target material and a preparation method thereof. The preparation method comprises the steps that 1, zinc oxide powder is doped with magnesium oxide powder and third oxide powder, and then the mixed powder and an ethanol solution are mixed so as to form slurry; (2) ball milling is carried out on the slurry, and then drying and sieving are carried out so as to obtain powder for molding; (3) isostatic cool pressing is carried out on the powder so as to form a green body; and (4) the green body is slowly heated to 900-1150 DEG C, heat preservation is carried out for 30-90 minutes, then the green body is quickly heated to the sintering temperature of 1300-1450 DEG C, heat preservation is carried out for 120-480 minutes, slow cooling is carried out so as to form a semi-finished product, and cutting and polishing are carried out so to obtain the magnesium-doped zinc oxide magnetron sputtering target material. The target material has the advantages that the density is high, the relative density is greater than 95% or above, meanwhile, the electrical resistivity is low and can reach 4*10<-2>, the resistance of the target material is far lower than the resistance of a target material in the prior art, the conductive effect is good, and the requirement for medium-frequency rapid sputtering of a coating production line can be met.

Description

technical field [0001] The invention relates to the technical field of photoelectric materials, in particular to a magnesium-doped zinc oxide magnetron sputtering target and a preparation method thereof. Background technique [0002] Zinc oxide, as an environmentally friendly and abundant multifunctional wide-bandgap oxide photoelectric material, can become a higher The transparent conductive oxide material (transparent conductive oxide, TCO) with photoelectric performance has the advantages of ultraviolet light absorption, visible light transparency, infrared light reflection and adjustable electrical characteristics. , smart glass and other optoelectronic information fields are getting more and more applications. [0003] In addition, zinc oxide materials are endowed with some new characteristics and applications after being doped with MgO materials with wider band gaps. Due to Mg 2+ The ionic radius (0.072nm) of Zn 2+ The ionic radius (0.074nm) is close, so Mg 2+ Sub...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/35C23C14/08
CPCC23C14/35C23C14/3414C23C14/086
Inventor 杨晔程奕兰品军宋伟杰朱永明
Owner 森祥(宁波)新材料有限公司
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