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Magnesium-doped enhanced GaN-based HEMT device and preparation method thereof

An enhanced and device technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve problems such as high cost, complicated process conditions, and long time, and achieve low cost, optimized device performance, and short time Effect

Pending Publication Date: 2019-06-14
SOUTH CHINA UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0010] The invention can solve the existing problems of high cost, long time and complicated process conditions of the under-gate P-type doped layer grown by metal organic chemical vapor deposition (MOCVD) or molecular beam epitaxy (MBE), and realizes the normal operation of GaN-based HEMT devices. Closed operation

Method used

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  • Magnesium-doped enhanced GaN-based HEMT device and preparation method thereof
  • Magnesium-doped enhanced GaN-based HEMT device and preparation method thereof
  • Magnesium-doped enhanced GaN-based HEMT device and preparation method thereof

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Effect test

Embodiment 1

[0040] (1) Al on silicon-based GaN epitaxial wafers x Ga 1-x Photolithography on the N barrier layer prepares the gate electrode contact window to obtain a device containing the gate electrode contact window; the Al x Ga 1-x In the N barrier layer, the value of x is 0.01;

[0041] (2) On the surface of the contact window of the gate electrode in step (1), a layer of magnesium metal is deposited by electron beam evaporation, the thickness of the magnesium metal is 10nm; a device containing magnesium metal is obtained;

[0042] (3) performing stripping treatment on the unexposed photoresist on the magnesium-containing device described in step (2), to obtain the stripped device;

[0043] (4) Perform thermal annealing treatment on the device after the stripping treatment described in step (3) by using a thermal annealing process, so that the metal magnesium is diffused and doped into Al x Ga 1-x The N barrier layer forms a P-type AlGaN doped layer to obtain a device after the...

Embodiment 2

[0051] (1) Al on silicon-based GaN epitaxial wafers x Ga 1-x Photolithography on the N barrier layer prepares the gate electrode contact window to obtain a device containing the gate electrode contact window; the Al x Ga 1-x In the N barrier layer, the value of x is 0.25;

[0052] (2) Depositing a layer of metal magnesium on the surface of the gate electrode contact window in step (1) by means of electron beam evaporation, the thickness of the metal magnesium being 100 nm; obtaining a device containing metal magnesium;

[0053] (3) performing stripping treatment on the unexposed photoresist on the magnesium-containing device described in step (2), to obtain the stripped device;

[0054] (4) Perform thermal annealing treatment on the device after the stripping treatment described in step (3) by using a thermal annealing process, so that the metal magnesium is diffused and doped into Al x Ga 1-x The N barrier layer forms a P-type AlGaN doped layer to obtain a device after t...

Embodiment 3

[0060] (1) Al on silicon-based GaN epitaxial wafers x Ga 1-x Photolithography on the N barrier layer prepares the gate electrode contact window to obtain a device containing the gate electrode contact window; the Al x Ga 1-x In the N barrier layer, the value of x is 0.5;

[0061] (2) On the surface of the contact window of the gate electrode in step (1), a layer of magnesium metal is deposited by electron beam evaporation, the thickness of the magnesium metal is 200nm; a device containing magnesium metal is obtained;

[0062] (3) performing stripping treatment on the unexposed photoresist on the magnesium-containing device described in step (2), to obtain the stripped device;

[0063] (4) Perform thermal annealing treatment on the device after the stripping treatment described in step (3) by using a thermal annealing process, so that the metal magnesium is diffused and doped into Al x Ga 1-x The N barrier layer forms a P-type AlGaN doped layer to obtain a device after the...

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Abstract

The invention discloses a magnesium-doped enhanced GaN-based HEMT device and a preparation method thereof. The method comprises the following steps: (1) a gate electrode contact window is formed abovean AlxGa1-xN barrier layer in a photoetching mode; (2) metal magnesium is deposited on the photo-etched surface by adopting an electron beam evaporation / thermal evaporation / magnetron sputtering method; (3) the unexposed photoresist is stripped by adopting a stripping process; (4) a thermal annealing process is carried out on an epitaxial wafer deposited with magnesium for performing diffusion doping of thermal annealing; and (5) the annealed surface metal magnesium is removed by preparing dilute hydrochloric acid to obtain the enhanced GaN-based HEMT device. According to the method, the metal magnesium thermal diffusion technology is utilized to realize the P-type doping of the AlxGa1-xN barrier layer below the gate electrode to prepare the enhanced GaN-based HEMT device. The preparationmethod has the advantages of being simple in process and low in cost, and has important significance for realizing the high-performance GaN-based HEMT devices.

Description

technical field [0001] The invention belongs to the technical field of semiconductor devices, and in particular relates to an enhanced GaN-based HEMT device prepared by doping magnesium and a preparation method thereof. Background technique [0002] Power electronic devices are the core components of power electronic systems. With the rapid development of power electronics technology, the limitations of traditional silicon materials and second-generation semiconductor materials have become increasingly prominent, and power electronic devices based on this material have been unable to meet the needs of power systems in terms of high frequency, low loss, and high power capacity. Urgent needs. The third-generation wide-bandgap semiconductor materials represented by GaN materials have shown outstanding advantages in power electronic devices due to their large bandgap width, high critical breakdown field strength, and strong radiation resistance. [0003] High electron mobility...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/778H01L21/335
Inventor 李国强万利军刘智崑陈丁波孙佩椰阙显沣姚书南李润泽
Owner SOUTH CHINA UNIV OF TECH
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