Perovskite LED device based on surface ligand control and preparation method thereof

A light-emitting diode and perovskite technology, which is applied in the field of perovskite light-emitting diode devices and their preparation, can solve problems such as research on the electroluminescent properties of light-emitting diode devices, and achieve the goals of reducing leakage current, high repeatability, and suppressing the formation of defects Effect
CN110867532AInactive Publication Date: 2020-03-06SUZHOU UNIV
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
SUZHOU UNIV
Publication Date
2020-03-06
Estimated Expiration
Not applicable · inactive patent

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Abstract

The invention relates to a method for preparing a perovskite LED device based on surface ligand control, including the following steps: applying an organic solution of a hole injection layer materialto the surface of a conductive substrate, and forming a hole injection layer after annealing; dissolving cesium bromide, lead bromide and phenethylamine bromide in an organic solvent under the effectof a 3-(decyl dimethyl ammonium) propane-1-sulfonic acid inner salt surfactant to obtain a perovskite precursor solution, applying the perovskite precursor solution to the surface of the hole injection layer and obtaining a perovskite film after annealing; treating the surface of the perovskite film with an alkylamine organic solution to form a light-emitting layer; and successively preparing an electron transport layer, an electron injection layer and a metal cathode electrode on the surface of the light-emitting layer. The method of the invention is simple and convenient, has a wide range ofmaterials and good repeatability, and can achieve the device performance. Through surface ligand exchange, the flatness and uniformity of the perovskite film are improved, the formation of defects iseffectively suppressed, and the overall performance of the device is significantly improved.
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Description

technical field

[0001] The invention relates to the field of semiconductor devices, in particular to a perovskite light-emitting diode device based on surface ligand control and a preparation method thereof. Background technique

[0002] Perovskite material has unique photoelectric characteristics, its low exciton binding energy (50-37meV), high carrier mobility, and high absorption coefficient make it have a good performance in the field of light-emitting diodes. The perovskite structure can Without high-temperature treatment, polycrystalline thin films are constructed by a simple solution process, which has high application potential on large-area flexible light-emitting substrates, due to their strong photoluminescence properties and adjustable band gap of polycrystalline materials full width at half maximum (FWHM), making them highly potential for use in light-emitting diodes. Therefore, the application research of perovskite in the field of light-emitting diodes has be...

Claims

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