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Trifluoroacetate induction based small-grain CsPbX3 perovskite thin film preparation method

A technology of trifluoroacetate and perovskite, which is applied in semiconductor/solid-state device manufacturing, chemical instruments and methods, lead compounds, etc., can solve problems such as limiting the performance of light-emitting devices, reducing device stability, and grain boundary defects. Achieve the effect of green and healthy preparation process, stable performance and less grain boundary defects

Inactive Publication Date: 2019-07-26
SHANGHAI UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

In order to reduce the inorganic CsPbX 3 crystallite size of thin films, several strategies have been developed, including anti-solvent vapor treatment, polymer additive-assisted film growth, and precursor solution composition optimization, however these strategies can reduce the grain size to some extent, but at the same time produce More grain boundary defects and thus a higher density of trap states
In addition, under the induction of the electric field, the constituent ions in the perovskite will migrate along the grain boundaries for ion migration, which will cause the non-radiative recombination of the perovskite light-emitting layer, which limits the performance of the light-emitting device and reduces the stability of the device.

Method used

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  • Trifluoroacetate induction based small-grain CsPbX3 perovskite thin film preparation method
  • Trifluoroacetate induction based small-grain CsPbX3 perovskite thin film preparation method

Examples

Experimental program
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Effect test

Embodiment 1

[0019] In this example, see figure 1 with figure 2 , a small-grained CsPbBr based on trifluoroacetate-induced 3 The preparation method of perovskite thin film, comprises the steps:

[0020] a.CsPbBr 3 Preparation of perovskite precursor solution:

[0021] Cesium trifluoroacetate (CsTFA), lead bromide (PbBr 2 ) as raw material, according to CsTFA and PbBr 2 The molar ratios are respectively 1.3:1, 1.5:1, 1.7:1 and 1.9:1. Weigh the above-mentioned raw materials with different ratios respectively, and dissolve the raw materials in anhydrous dimethyl sulfoxide (DMSO) In , a series of raw material mixtures were obtained, and each raw material mixture was placed on a heating stirrer, heated at a temperature of 60°C, and stirred by the stirrer at the same time, so that the raw material mixture was stirred evenly overnight, and then the pore size The PTFE filter with a pore size of 0.45 μm is used to filter the raw material mixture to obtain uniform CsPbBr 3 Perovskite precurs...

Embodiment 2

[0028] This embodiment is basically the same as Embodiment 1, especially in that:

[0029] In this example, a trifluoroacetate-induced small-grain CsPbCl 3 The preparation method of perovskite thin film, comprises the steps:

[0030] a.CsPbCl 3 Preparation of perovskite precursor solution:

[0031] Cesium trifluoroacetate (CsTFA), lead chloride (PbCl 2 ) as raw material, according to CsTFA and PbCl 2 The molar ratios are respectively 1.3:1, 1.5:1, 1.7:1 and 1.9:1. Weigh the above-mentioned raw materials with different ratios respectively, and dissolve the raw materials in anhydrous dimethyl sulfoxide (DMSO) In , a series of raw material mixtures were obtained, and each raw material mixture was placed on a heating stirrer, heated at a temperature of 60°C, and stirred by the stirrer at the same time, so that the raw material mixture was stirred evenly overnight, and then the pore size Filter the raw material mixture with a polytetrafluoroethylene filter with a pore size of ...

Embodiment 3

[0038] This embodiment is basically the same as the previous embodiment, and the special features are:

[0039] In this example, a trifluoroacetate-induced small-grain CsPbI 3 The preparation method of perovskite thin film, comprises the steps:

[0040] a.CsPbI 3 Preparation of perovskite precursor solution:

[0041] Cesium trifluoroacetate (CsTFA), lead iodide (PbI 2 ) as raw material, according to CsTFA and PbI 2 The molar ratios are respectively 1.3:1, 1.5:1, 1.7:1 and 1.9:1. Weigh the above-mentioned raw materials with different ratios respectively, and dissolve the raw materials in anhydrous dimethyl sulfoxide (DMSO) In , a series of raw material mixtures were obtained, and each raw material mixture was placed on a heating stirrer, heated at a temperature of 60°C, and stirred by the stirrer at the same time, so that the raw material mixture was stirred evenly overnight, and then the pore size Filter the raw material mixture with a polytetrafluoroethylene filter with ...

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Abstract

The invention discloses a trifluoroacetate induction based small-grain CsPbX3 perovskite thin film preparation method. The method includes steps: firstly, preparing CsPbX3 perovskite precursor solution; secondly, setting the CsPbX3 perovskite precursor solution on a substrate, and performing curing and annealing to form a film. Under irradiation of an ultraviolet lamp, a CsPbX3 perovskite thin film varies in color according to different halogens. According to the method, cesium trifluoroacetate (CsTFA) is adopted as a new cesium source to take the place of cesium bromide (CsBr) which is a traditional cesium source for preparing the CsPbX3 perovskite thin film, and cost of the prepared perovskite thin film is evidently reduced. Compared with a CsPbX3 thin film prepared according to a traditional method, the CsPbX3 thin film prepared according to the method has advantages that stability is evidently improved, the perovskite grain size is evidently reduced, and the preparation process isenvironmentally friendly, green and healthy.

Description

technical field [0001] The invention relates to a preparation method of a perovskite thin film, in particular to a preparation method of an all-inorganic cesium lead halide perovskite thin film, which is applied in the technical field of photoelectric material or semiconductor material preparation technology. Background technique [0002] Based on all-inorganic cesium lead halide perovskite, namely CsPbX 3 , where X is Cl, Br, or I, has attracted much attention in the fields of new displays and solid-state lighting due to its unique advantages of high color saturation, excellent carrier mobility, low-cost manufacturing, and high thermal and chemical stability. Attention, with broad market application value. [0003] However, previously reported CsPbX 3 Perovskite thin films exhibit poor performance, mainly affected by the associated trap states at the grain boundaries and the large crystal size. Trap states at adjacent grain boundaries cause severe nonradiative energy tra...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01G21/00H01L21/02
CPCC01G21/006C01P2002/34C01P2002/70C01P2004/01C01P2006/40H01L21/02521H01L21/02628H01L21/02664
Inventor 吴倩倩王浩然张建凤杨珩孔令媚张婷杨绪勇
Owner SHANGHAI UNIV
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