33results about How to "Reduce grain boundary defects" patented technology

The invention involves a thin film drying method, including the following steps: coating the wet film on the basis surface, add a layer of covering film or cover plate containing nano -grade holes on the surface of the wet film., Heat the wet film covering the covered film or cover plate, wait for the wet film to change from the state of the solvent to solid state, and unveil the coverage of the covering film or cover plate to complete the dryness of the wet film.The present invention also disclosed that the method is applied to the solar cells of perovskite.The invention can control the drying rate of the film, increase the growth time of the crystal in the film, increase the grain size, reduce the crystal defect, and improve the quality of the film.

The invention discloses low-temperature rapidly sintered soft magnetic ferrite and a preparation method thereof. The preparation method comprises the following steps: S1, weighing the following components in parts by mole: 60-80 parts of ferric oxide, 40-60 parts of zinc oxide, 30-50 parts of copper oxide and 15-20 parts of manganese carbonate, and performing mixing ball-milling till the average particle size is 5-30 [mu]m so as to obtain mixed powder; S2, pre-sintering the mixed powder at 900-1000 DEG C so as to obtain a pre-sintered material; S3, weighing yttrium oxide, aluminum oxide and lithium carbonate as doping materials; S4, adding the doping materials weighed in the step S3 into the pre-sintered material, performing secondary ball-milling for 6-8 hours, drying, adding polyvinyl alcohol, and performing pelletizing so as to obtain a granular material; S5, heating the granular material to sintering temperature in the presence of an air atmosphere, and performing warm-keeping sintering, thereby obtaining the low-temperature rapidly sintered soft magnetic ferrite, wherein the sintering temperature meets the equation that T=1454 / [1g(X+2Y+Z)+t]. Due to mutual cooperation of the main material and the doping materials, a preparation process is optimized, the sintering temperature is reduced, and meanwhile the electromagnetic properties of the ferrite are ensured.

The invention discloses a method for preparing a perovskite photovoltaic thin film based on a double-effect seed growth method, and belongs to the technical field of perovskite solar cells. The present invention adopts two-step deposition method to prepare perovskite photovoltaic film, by 2 Add CsPbX to the precursor solution 3 Seed crystals provide crystal nuclei for the growth process of perovskite photovoltaic thin films, and then the PbI 2 The FAI / MAI solution is deposited on the layer and heated and annealed to obtain a perovskite photovoltaic film. The invention effectively improves the crystallinity of the perovskite photovoltaic thin film, the crystal grains of the perovskite are significantly enlarged, and the short-circuit current, open-circuit voltage, filling factor and photoelectric conversion efficiency of the solar cell are significantly improved. Furthermore, since Cs + Ions were introduced into the perovskite photovoltaic film, and the light stability of the perovskite photovoltaic film was improved. The method is simple and practical, low in cost and easy to promote, and has great reference significance for improving the photovoltaic performance of perovskite photovoltaic thin films.

The invention discloses a method for manufacturing a polysilicon layer and a method for manufacturing a polysilicon thin film transistor, and relates to the display field. The polysilicon layer formed by the method has high crystallization rate, uniform crystal grains, and few grain boundary defects, thereby improving the performance of the polysilicon thin film transistor. Electrical properties, improve the reliability of polysilicon thin film transistors. The manufacturing method of the polysilicon layer in the present invention includes: providing a substrate; forming a barrier layer and a buffer layer sequentially on the substrate; setting a plurality of grooves in the buffer layer through a patterning process, and forming a plurality of grooves in the buffer layer A seed crystal is formed on it; an amorphous silicon layer is formed on the buffer layer provided with grooves and the seed crystal; a heat treatment process is used to convert the amorphous silicon layer into a polysilicon layer. The invention is used to improve the quality of polysilicon film.

The invention discloses a method for preparing a thin film of a quasi-one-dimensional structural material with controllable orientation. The method is based on a vertical evaporation tube furnace, and specifically includes the following steps: (1) placing the evaporation source material and the substrate to be deposited on the In the vertical evaporation tube furnace; (2) vacuum treatment, so that the vacuum degree of the vertical evaporation tube furnace remains at the preset vacuum degree and the fluctuation does not exceed ± 1Pa; (3) heat treatment in the heating zone, so that The evaporation source material is evaporated and deposited on the substrate to form a thin film; during the preparation process, the orientation of the formed quasi-one-dimensional material film can be controlled by controlling the parameters of the evaporation process. The present invention improves the key process parameters of the preparation method, adopts a vertical evaporation tube furnace with a specific structure for deposition, realizes the deposition and orientation control of a quasi-one-dimensional material film, and obtains a semiconductor film with a controllable orientation independent of the substrate , compared with the prior art, it can effectively solve the problem that the orientation of quasi-one-dimensional materials cannot be controlled.

The embodiment of the present invention discloses a polysilicon thin film manufacturing method. The polysilicon thin film manufacturing method includes providing a first substrate and the temperature resistance of the first substrate is greater than or equal to 600° C.; forming a polysilicon thin film on the first substrate ; Transferring the formed polysilicon film to a glass substrate. In the technical solution of the present invention, a polysilicon film is first formed on the first substrate with a high temperature resistance temperature, and then the formed polysilicon film is transferred to a glass substrate, which avoids the temperature resistance of the glass substrate from making the production process of the polysilicon film subject to difficulties. Compared with the laser laser process adopted in the prior art, the crystal grains of the polysilicon film can reach a larger size, and the polysilicon film with a large grain size has fewer grain boundary defects, which improves the film quality of the formed polysilicon film And the electrical reliability of the polysilicon thin film.

The invention belongs to the technical field of alloy manufacturing, and in particular relates to an ultra-high-strength corrosion-resistant alloy and a manufacturing method, in particular to a Cr-Ni-Mo-Nb corrosion-resistant alloy having both ultra-high strength and excellent stress corrosion properties and the Alloy production technology. The alloys of the present invention include the elements nickel, carbon, silicon, manganese, sulfur, chromium, molybdenum, iron, aluminum, titanium, niobium, zirconium, yttrium. The alloy prepared by the present invention is in high pressure H 2 S. High pressure CO 2 And in the chloride ion environment, it not only has very high strength, but also has excellent stress corrosion resistance, can be used to manufacture key components of oilfield drilling and production equipment, and has a long service life.

The invention is a hydrogen and hydrogen sulfide corrosion resistant steel forging and its production process, chemical composition: C: 0.01-0.03%, Si: 0.6-0.8%, Mn: 0.9-1.1%, P: <0.015%, S : <0.005%, Cr: 28.6-28.8%, Mo: 0.1-0.3%, Nb: 0.06-0.08%, V: 0.07-0.09%, Ti: 0.005-0.007%, B: 0.005-0.007%, Al: 0.07 -0.09%, Cu: 0.03-0.05%, Co: 0.014-0.016%, N: 0.03-0.05%, compound rare earth: 0.17-0.19%, and the balance is Fe. The forging of the invention can obtain fine, complete and high dislocation density ferrite and austenite structures, and has outstanding resistance to hydrogen and hydrogen sulfide corrosion.

The invention discloses a thin film transistor, a manufacturing method thereof, an array substrate and a display device, and belongs to the field of display technology. It includes: a highly textured dielectric layer stacked on the base substrate, an active layer, a gate and a source and drain, the source and drain include a source and a drain, and the gate and the active layer Insulated, the source and the drain are electrically connected to the active layer respectively; wherein, the constituent particles of the active layer are single-crystal silicon-like structures. The invention replaces the original buffer layer with a highly textured dielectric layer to induce the active layer to grow into a single-crystal silicon-like structure, thereby improving the performance of the thin film transistor.

The invention belongs to the technical field of crystal growth, and concretely relates to a crystal growth crucible, a crystal growth device and a crystal growth method. The crystal growth crucible comprises a crucible body and a heat exchanger. The crucible body comprises a sidewall, a bottom wall and a crucible cover, and the sidewall, the bottom wall and the crucible cover form a crucible chamber providing a place for the growth of crystals. The heat exchanger traverses through the crucible cover and stretches into the crucible chamber, and one end, stretching into the crucible, of the heat exchanger is provided with seed crystals. Heaters are arranged around the crucible body. A heat exchange method, a Kyropoulos method and a Czochralski method are combined to provide the optimized crystal growth method, so the internal defects of the crystals are reduced, the cracking probability of the crystals is reduced, and the yield of the crystals is increased.