32results about How to "Reduce grain boundary defects" patented technology

The invention discloses a manufacturing method of a polycrystalline silicon layer and a polycrystalline silicon thin film transistor and a manufacturing method thereof, and relates to the field of displaying. According to the manufacturing methods, a crystallization rate of a formed polycrystalline silicon layer is high, crystalline grains are uniform, crystal boundary defects are little, thus electrics properties of the polycrystalline silicon thin film transistor can be improved, and reliability of the polycrystalline silicon thin film transistor is improved. The manufacturing method of the polycrystalline silicon layer includes the steps that a substrate is provided; a barrier layer and a buffer layer are sequentially formed on the substrate; multiple groves are arranged in the buffer layer through a picture composition process, and seed crystals are formed on the buffer layer; an amorphous silicon layer is formed on the buffer layer provided with the grooves and the seed crystals; and the amorphous silicon layer is converted into the polycrystalline silicon layer through adoption of a heating processing process. The manufacturing method of the polycrystalline silicon layer and the polycrystalline silicon thin film transistor and the manufacturing method of the polycrystalline silicon thin film transistor are used for improving quality of polycrystalline silicon films.

The invention discloses a hydrogen and hydrogen sulphide corrosion resistant steel forged piece and a production process thereof. The hydrogen and hydrogen sulphide corrosion resistant steel forged piece comprises the following chemical components: 0.01-0.03% of C, 0.6-0.8 % of Si, 0.9-1.1% of Mn, less than 0.015% of P, less than 0.005% of S, 28.6-28.8% of Cr, 0.1-0.3% of Mo, 0.06-0.08% of Nb, 0.07-0.09% of V, 0.005-0.007% of Ti, 0.005-0.007% of B, 0.07-0.09% of Al, 0.03-0.05% of Cu, 0.014-0.016% of Co, 0.03-0.05% of N, 0.17-0.19% of composite rear earth and the balance of Fe. The forced piece provided by the invention can be used for obtaining fine and complete ferrite and austenite structures with high dislocation densities and has remarkable hydrogen and hydrogen sulphide corrosion resistant property.

The invention provides a semiconductor layer structure, a polysilicon thin film transistor, a manufacturing method and a display device. By adopting the grain boundary connecting line technology, namely micro doping area used for connecting a grain boundary is formed at the grain boundary in a semiconductor layer made of polysilicon, grain boundary defects of polysilicon can be reduced, grain uniformity is improved, and electrical performance of a thin film transistor is improved.

The invention discloses a ternary fullerene organic solar cell, and belongs to the technical field of photovoltaics. According to the invention, in an active layer of a binary fullerene bulk heterojunction organic solar cell composed of a polymer donor material (PTB7-Th) and a fullerene acceptor material (PC71BM), an asymmetric thieno isobenzopyran-based (A'-D) 2A type small molecular donor material (TiC8) is added to construct an efficient and stable ternary fullerene organic solar cell with a PTB7-Th:TiC8:PC71BM active layer, wherein the energy conversion efficiency of the device reaches 10.40%, and the energy conversion efficiency of the device is still maintained at 81% of the original energy conversion efficiency after the device is placed in a nitrogen atmosphere for 4500 h; and compared with a binary fullerene organic solar cell, the ternary fullerene organic solar cell of the invention has the advantages that the energy conversion efficiency is improved by 18.3%, and the stability is also remarkably improved.

The invention discloses steel for a high-strength high-tenacity storage rack stand column. The steel comprises the following chemical components in percent by weight: 0.20-0.50% of C, 0.8-2.0% of Si, 1.5-3.0% of Mn, 0.02-0.08% of Al, 0.005-0.015% of Ti, 0.5-2.0% of Ni, 0.021-0.033% of lanthanide series rare earth, and the balance of Fe and unavoidable impurities, wherein the sum of Mn and Ni is 3.2-3.6%; the microstructures comprise lath martensite and retained austenite; the volume percentage composition of the retained austenite is 7.5-15.0%; the ballistic work of the steel at -20 DEG C is 38-48 J, the yield strength is 1,450-1,480 MPa, the tensile strength is greater than 1,300 MPa, and the ductility is 12-12.5%. The steel disclosed by the invention is good in corrosion resistance, cold workability and tenacity, meanwhile higher in tensile strength, and high in yield strength.

The invention belongs to the technical field of alloy manufacturing, and particularly relates to an ultrahigh-strength corrosion-resistant alloy and a manufacturing method thereof, in particular to a Cr-Ni-Mo-Nb corrosion-resistant alloy with ultrahigh strength and excellent stress corrosion resistance and a production technology of the alloy. The alloy comprises the elements of nickel, carbon, silicon, manganese, sulfur, chromium, molybdenum, iron, aluminum, titanium, niobium, zirconium and yttrium. The alloy prepared by the invention has very high strength and excellent stress corrosion resistance in the environments of high-pressure H2S, high-pressure CO2 and chloride ions, can be used for manufacturing key parts of oil field drilling and production equipment, and is long in service life.

The invention relates to the field of preparation of a polysilicon thin film material, especially to a preparation method of a polysilicon thin film material. The method comprises the following steps: depositing an amorphous silicon film and a metal aluminum film successively on a glass substrate by using a magnetron sputtering technology so as to obtain a composite thin film; and carrying out laser irradiation on the composite thin film and carrying out crystallization on the amorphous silicon film, thereby obtaining a polysilicon thin film material. When the amorphous silicon film and the metal aluminum film are successively deposited by using the magnetron sputtering technology, the temperature is not higher than 150 DEG C. According to the provided preparation method, the amorphous silicon film and the metal aluminum film are obtained by using the magnetron sputtering technology and no dangerous gas like silane is required; the highest temperature does not exceed 150 DEG C during the process of successive deposition of the amorphous silicon film and the metal aluminum film with the magnetron sputtering technology, so that the cheap glass substrate can be used; and the temperature of the polysilicon thin film preparation process is low, thereby substantially reducing the energy consumption.

The invention discloses a preparation method for directional growth of a tellurium-zinc-cadmium film on a graphene substrate. The preparation method comprises: preparing a single layer of graphene ona copper foil by using a CVD method, and preparing a layer of a directional tellurium-zinc-cadmium film by using the graphene as a substrate through a close-space sublimation method. According to thepresent invention, through the scheme for close-space sublimation preparation of the film by setting the distance between the substrate and the sublimation source, the graphene material is used as thesubstrate structure, and has the high lattice matching degree with the target CdZnTe film so as to prepare the CdZnTe film with good orientation; a purpose of the invention is to prepare the directional CdZnTe film on the graphene substrate by using the close-space sublimation method, such that the loss of the carrier transmission between the upper pole and the lower pole during the device preparation is low, the carrier transmission speed is improved, and the device transmission speed is improved; and compared to the CdZnTe single crystal growth process, the method of the invention has advantages of simplenes, lower cost, large area preparation, batch growth and high feasibility.

An embodiment of the invention discloses a polycrystalline silicon thin film manufacturing method. The polycrystalline silicon thin film manufacturing method comprises the steps: providing a first substrate, wherein the temperature resistance temperature of the first substrate is larger than or equal to 600 DEG C; forming a polycrystalline silicon thin film on the first substrate; and transferringthe formed polycrystalline silicon thin film to a glass substrate. According to the technical scheme provided by the invention, by forming the polycrystalline silicon thin film on the first substratewith higher temperature resistance, and then, transferring the formed polycrystalline silicon thin film onto the glass substrate, the problem that the manufacturing process of the polycrystalline silicon thin film is limited due to the temperature resistance of the glass substrate is avoided; and compared with a laser process adopted in the prior art, the method can allow crystal grains of the polycrystalline silicon thin film to reach a larger size, wherein crystal boundary defects of the polycrystalline silicon thin film with larger crystal grain size are fewer, so that the film forming quality of the formed polycrystalline silicon thin film and the electrical reliability of the polycrystalline silicon thin film are improved.

The invention belongs to the related technical field of micro-nano manufacturing. The invention discloses a self-powered perovskite photoelectric detector and a preparation method thereof. The photoelectric detector comprises a glass substrate, a CsPbIBr2 photosensitive film, a PMMA modification layer and an Ag electrode layer. The glass substrate comprises a substrate body and an ITO conductive layer arranged on the substrate body; the CsPbIBr2 photosensitive film is arranged on the ITO conductive layer; the PMMA modification layer is arranged on the surface, far away from the ITO conductivelayer, of the CsPbIBr2 photosensitive film; and the Ag electrode layer is arranged on the surface, far away from the CsPbIBr2 photosensitive film, of the PMMA modification layer. Compared with other perovskite photoelectric detectors, the perovskite photoelectric detector is lower in production cost and process complexity; and the introduction of the PMMA modification layer is beneficial to further passivating the defects of the CsPbIBr2 photosensitive film, improving the carrier transmission rate and reducing the adverse non-radiative recombination loss, thereby improving the sensitivity andresponse rate of the photoelectric detector.

The invention relates to a jewel-like crystal based on animal skeletons and a preparation method of the jewel-like crystal. The preparation method comprises the following steps of burning animal skeletons into powder, then adding the powder into water, uniformly mixing, then adding an organic polymer monomer, a cross-linking agent, an initiator and a catalyst, and fully stirring to form slurry, injecting the slurry into a mold, enabling the organic polymer monomer to react, crosslink and polymerize to form polymer gel, and bonding and curing the particles in situ to form a green body, and carrying out high-temperature and high-pressure plasma-assisted sintering on the green body to obtain the jewel-like crystal. The technical means of material synthesis and crystal reconstruction are adopted, and the natural dead pet skeletons are subjected to atom recombination to form jewel-like crystals containing elements such as carbon, calcium, phosphorus, magnesium and oxygen; on the basis of the traditional hot pressing sintering technology, the plasma auxiliary sintering technology is combined, multi-field coupling of a thermal field, a force field and an electric field is achieved, energy needed by reaction is reduced, and the reaction rate and the production efficiency are improved.

The invention belongs to the technical field of crystal growth, and concretely relates to a crystal growth crucible, a crystal growth device and a crystal growth method. The crystal growth crucible comprises a crucible body and a heat exchanger. The crucible body comprises a sidewall, a bottom wall and a crucible cover, and the sidewall, the bottom wall and the crucible cover form a crucible chamber providing a place for the growth of crystals. The heat exchanger traverses through the crucible cover and stretches into the crucible chamber, and one end, stretching into the crucible, of the heat exchanger is provided with seed crystals. Heaters are arranged around the crucible body. A heat exchange method, a Kyropoulos method and a Czochralski method are combined to provide the optimized crystal growth method, so the internal defects of the crystals are reduced, the cracking probability of the crystals is reduced, and the yield of the crystals is increased.