33results about How to "Reduce grain boundary defects" patented technology

The invention discloses a method for preparing a perovskite photovoltaic thin film based on a double-effect seed growth method, and belongs to the technical field of perovskite solar cells. The present invention adopts two-step deposition method to prepare perovskite photovoltaic film, by 2 Add CsPbX to the precursor solution 3 Seed crystals provide crystal nuclei for the growth process of perovskite photovoltaic thin films, and then the PbI 2 The FAI / MAI solution is deposited on the layer and heated and annealed to obtain a perovskite photovoltaic film. The invention effectively improves the crystallinity of the perovskite photovoltaic thin film, the crystal grains of the perovskite are significantly enlarged, and the short-circuit current, open-circuit voltage, filling factor and photoelectric conversion efficiency of the solar cell are significantly improved. Furthermore, since Cs + Ions were introduced into the perovskite photovoltaic film, and the light stability of the perovskite photovoltaic film was improved. The method is simple and practical, low in cost and easy to promote, and has great reference significance for improving the photovoltaic performance of perovskite photovoltaic thin films.

The invention discloses a method for manufacturing a polysilicon layer and a method for manufacturing a polysilicon thin film transistor, and relates to the display field. The polysilicon layer formed by the method has high crystallization rate, uniform crystal grains, and few grain boundary defects, thereby improving the performance of the polysilicon thin film transistor. Electrical properties, improve the reliability of polysilicon thin film transistors. The manufacturing method of the polysilicon layer in the present invention includes: providing a substrate; forming a barrier layer and a buffer layer sequentially on the substrate; setting a plurality of grooves in the buffer layer through a patterning process, and forming a plurality of grooves in the buffer layer A seed crystal is formed on it; an amorphous silicon layer is formed on the buffer layer provided with grooves and the seed crystal; a heat treatment process is used to convert the amorphous silicon layer into a polysilicon layer. The invention is used to improve the quality of polysilicon film.

The invention discloses a method for preparing a thin film of a quasi-one-dimensional structural material with controllable orientation. The method is based on a vertical evaporation tube furnace, and specifically includes the following steps: (1) placing the evaporation source material and the substrate to be deposited on the In the vertical evaporation tube furnace; (2) vacuum treatment, so that the vacuum degree of the vertical evaporation tube furnace remains at the preset vacuum degree and the fluctuation does not exceed ± 1Pa; (3) heat treatment in the heating zone, so that The evaporation source material is evaporated and deposited on the substrate to form a thin film; during the preparation process, the orientation of the formed quasi-one-dimensional material film can be controlled by controlling the parameters of the evaporation process. The present invention improves the key process parameters of the preparation method, adopts a vertical evaporation tube furnace with a specific structure for deposition, realizes the deposition and orientation control of a quasi-one-dimensional material film, and obtains a semiconductor film with a controllable orientation independent of the substrate , compared with the prior art, it can effectively solve the problem that the orientation of quasi-one-dimensional materials cannot be controlled.

The invention is a hydrogen and hydrogen sulfide corrosion resistant steel forging and its production process, chemical composition: C: 0.01-0.03%, Si: 0.6-0.8%, Mn: 0.9-1.1%, P: <0.015%, S : <0.005%, Cr: 28.6-28.8%, Mo: 0.1-0.3%, Nb: 0.06-0.08%, V: 0.07-0.09%, Ti: 0.005-0.007%, B: 0.005-0.007%, Al: 0.07 -0.09%, Cu: 0.03-0.05%, Co: 0.014-0.016%, N: 0.03-0.05%, compound rare earth: 0.17-0.19%, and the balance is Fe. The forging of the invention can obtain fine, complete and high dislocation density ferrite and austenite structures, and has outstanding resistance to hydrogen and hydrogen sulfide corrosion.