This invention discloses a method for preparing high-purity
oxygen-free
copper, relating to the field of metallurgical technology. The method includes multi-stage electrolytic refining, gradient-heating vacuum melting,
inert gas-protected refining,
electron beam melting,
hydrogen plasma arc melting,
directional solidification, and post-treatment steps. The multi-stage electrolytic refining utilizes a specific component
electrolyte and periodically commutated current; vacuum melting is combined with bidirectional
electromagnetic stirring;
inert gas-protected refining is combined with a gradient reduction composite covering agent;
electron beam and
hydrogen plasma arc melting achieve deep purification and deoxidation; and
directional solidification and two-stage annealing
ensure product performance. The high-purity
oxygen-free
copper prepared by this invention has a
conductivity of 102.3% IACS, a
copper content ≥99.9999%, and an
oxygen content <1.0 ppm. It exhibits high purity,
low oxygen content, and excellent
conductivity. The process is stable and controllable, making it suitable for high-end
electronics applications.