A kind of polysilicon film production method

Abstract

The embodiment of the present invention discloses a polysilicon thin film manufacturing method. The polysilicon thin film manufacturing method includes providing a first substrate and the temperature resistance of the first substrate is greater than or equal to 600° C.; forming a polysilicon thin film on the first substrate ; Transferring the formed polysilicon film to a glass substrate. In the technical solution of the present invention, a polysilicon film is first formed on the first substrate with a high temperature resistance temperature, and then the formed polysilicon film is transferred to a glass substrate, which avoids the temperature resistance of the glass substrate from making the production process of the polysilicon film subject to difficulties. Compared with the laser laser process adopted in the prior art, the crystal grains of the polysilicon film can reach a larger size, and the polysilicon film with a large grain size has fewer grain boundary defects, which improves the film quality of the formed polysilicon film And the electrical reliability of the polysilicon thin film.

Description

technical field [0001] The embodiments of the present invention relate to the technical field of semiconductor manufacturing, and in particular to a method for manufacturing a polysilicon thin film. Background technique [0002] Low-temperature polysilicon has the advantages of regular atomic arrangement and high carrier mobility. In the field of liquid crystal display, low-temperature polysilicon has a high driving current, which can speed up the response time of liquid crystal, reduce the volume of thin-film transistors, and increase the light-transmitting area, making liquid crystal display The brightness and resolution of the panel are high, so low-temperature polysilicon is widely used in the manufacturing process of the thin film transistor to prepare the active layer. [0003] At present, when preparing polysilicon thin films, a layer of amorphous silicon thin film is generally deposited on a glass substrate first, and then the amorphous silicon thin film is converted...

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Problems solved by technology

[0003] At present, when preparing polysilicon thin films, a layer of amorphous silicon thin film is generally deposited on a glass substrate first, and then the amorphous silicon thin film is converted into a polysilicon thin film by laser laser technology. When the process temperature required by the deposition process is high, and The temperature resistance of glass substrates limits the fabrication process of polysilicon thin films

In addition, the laser laser process is more complicated, the process cost is higher, and the polysilicon film formed by the laser laser process has a small grain size and a large film roughness, which seriously affects the film quality of the polysilicon film and the electrical reliability of the polysilicon film.

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