A kind of crystal growth crucible, device and growth method thereof

Abstract

The invention belongs to the technical field of crystal growth, and concretely relates to a crystal growth crucible, a crystal growth device and a crystal growth method. The crystal growth crucible comprises a crucible body and a heat exchanger. The crucible body comprises a sidewall, a bottom wall and a crucible cover, and the sidewall, the bottom wall and the crucible cover form a crucible chamber providing a place for the growth of crystals. The heat exchanger traverses through the crucible cover and stretches into the crucible chamber, and one end, stretching into the crucible, of the heat exchanger is provided with seed crystals. Heaters are arranged around the crucible body. A heat exchange method, a Kyropoulos method and a Czochralski method are combined to provide the optimized crystal growth method, so the internal defects of the crystals are reduced, the cracking probability of the crystals is reduced, and the yield of the crystals is increased.

Description

technical field [0001] The invention belongs to the technical field of crystal growth, in particular to a crystal growth crucible, a device and a growth method thereof. Background technique [0002] Crystal growth methods include heat exchange method (HEM), Kyroplasty method (KY) and pulling method (CZ). The principle of the heat exchange method is to use the heat exchanger to take away the heat, so that the crystal grows to form a longitudinal temperature gradient of cold and hot, and then control the temperature gradient by controlling the gas flow in the heat exchanger and changing the power level, thus A crystal growth method in which the melt in the crucible grows upward from the seed crystal at the bottom of the crucible. Its advantages are: the initial stage of crystal growth can be automatically seeded, the degree of automation is high, the process consistency is easy to achieve, and the labor intensity and cost of seeding are reduced at the same time; there is no p...

AI Technical Summary

Problems solved by technology

[0005] However, the traditional heat exchange method, the Kyropoulos method and the pulling method all have their corresponding shortcomings. The biggest disadvantage of the heat exchange method is that the crystal surface is a constrained surface because the crystal is in contact with the crystal crucible during the melting process. , the internal pressure is high, and it is easy to crack; and because the contact between the crystal and the crucible increases the probability of introducing nucleation impurities on the surface of the crucible, increasing the internal defects of the crystal

[0006] The disadvantage of the Kyropoulos method is that seeding is required at the beginning of crystal growth, which requires a high degree of proficiency in seeding, and it is difficult to achieve process consistency; and there is physical movement during the crystal growth stage, the solid-liquid interface is easily disturbed, and the solid-liquid interface unstable

[0007] Disadvantages of the pulling method: seeding is required at the beginning of crystal growth, which requires high proficiency in seeding, and it is difficult to achieve process consistency; each stage of crystal growth has movement and rotation, and the solid-liquid interface is easily disturbed and unstable

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