Preparation method for directional growth of tellurium-zinc-cadmium film on graphene substrate
A graphene thin film, directional growth technology, applied in the direction of crystal growth, single crystal growth, single crystal growth, etc., can solve problems such as difficult to achieve high resistance, low defect, disordered film, application impact, etc., to improve device transmission speed, The effect of fast transmission speed and less grain boundary defects
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Example Embodiment
[0020] Example one:
[0021] In this embodiment, a preparation method for directional growth of a cadmium zinc telluride film on a graphene substrate includes the following steps:
[0022] (1) Substrate preparation and pretreatment:
[0023] The substrate is prepared by CVD method, the specific method is as follows:
[0024] Clean the copper foil with acetone solution to remove the organic impurities on the surface of the copper foil, and then put the cleaned copper foil into the CVD growth chamber, pass argon gas to control the pressure to 340mTorr, and pass hydrogen gas at a flow rate of 20sccm to heat To 1050 ℃ and keep for 30 minutes, then remove the surface oxides on the copper foil, continue to keep the temperature unchanged, and inject a mixed gas of methane and hydrogen at a flow rate of 8 sccm for 20 minutes, and control the volume fraction of hydrogen in the mixed gas in the CVD growth chamber as 50%, the product produced on the copper foil is a single-layer graphene film; ...
Example Embodiment
[0031] Embodiment two:
[0032] This embodiment is basically the same as the first embodiment, and the special features are:
[0033] In this embodiment, a preparation method for directional growth of a cadmium zinc telluride film on a graphene substrate includes the following steps:
[0034] (1) Substrate preparation and pretreatment:
[0035] The substrate is prepared by the CVD method, and the specific method is as follows:
[0036] Clean the copper foil with acetone solution to remove the organic impurities on the surface of the copper foil, and then put the cleaned copper foil into the CVD growth chamber, pass argon gas to control the pressure to 340mTorr, and pass hydrogen gas at a flow rate of 20sccm to heat To 1050 ℃ and keep for 30 minutes, then remove the oxides on the surface of the copper foil, continue to keep the temperature unchanged, respectively pass the mixed gas of methane and hydrogen at a flow rate of 8 sccm for 20 minutes, and control the volume fraction of hydrog...
Example Embodiment
[0043] Embodiment three:
[0044] This embodiment is basically the same as the previous embodiment, and the special features are:
[0045] In this embodiment, a preparation method for directional growth of a cadmium zinc telluride film on a graphene substrate includes the following steps:
[0046] (1) Substrate preparation and pretreatment:
[0047] The substrate is prepared by the CVD method, and the specific method is as follows:
[0048] Clean the copper foil with acetone solution to remove the organic impurities on the surface of the copper foil, and then put the cleaned copper foil into the CVD growth chamber, pass argon gas to control the pressure to 340mTorr, and pass hydrogen gas at a flow rate of 20sccm to heat To 1050 ℃ and keep for 30 minutes, then remove the oxides on the surface of the copper foil, continue to keep the temperature unchanged, respectively pass the mixed gas of methane and hydrogen at a flow rate of 8 sccm for 20 minutes, and control the volume fraction of h...
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