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Preparation method for directional growth of tellurium-zinc-cadmium film on graphene substrate

A graphene thin film, directional growth technology, applied in the direction of crystal growth, single crystal growth, single crystal growth, etc., can solve problems such as difficult to achieve high resistance, low defect, disordered film, application impact, etc., to improve device transmission speed, The effect of fast transmission speed and less grain boundary defects

Active Publication Date: 2018-09-18
SHANGHAI UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The CdZnTe film prepared by the near-space sublimation method is a polycrystalline film, and the growth of the film is generally non-oriented and disorderly. Relatively speaking, it is difficult to achieve high resistance and low defects for such a film, which is very important for high-performance radiation detectors. applications affecting

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0021] In this embodiment, a preparation method for directionally growing a CdZnTe thin film on a graphene substrate comprises the following steps:

[0022] (1) Substrate preparation and pretreatment:

[0023] The substrate is prepared by CVD method, the specific method is as follows:

[0024] Clean the copper foil with acetone solution to remove organic impurities on the surface of the copper foil, then put the cleaned copper foil into the CVD growth chamber, feed argon gas to control the pressure to 340mTorr, and feed hydrogen gas at a flow rate of 20 sccm to heat to 1050°C and keep it for 30min, then remove the copper foil surface oxide, continue to keep the temperature constant, feed the mixed gas of methane and hydrogen at a flow rate of 8 sccm respectively for 20min, and control the volume fraction of hydrogen in the mixed gas in the CVD growth chamber to be 50%, the product generated on the copper foil is a single-layer graphene film; then stop feeding methane, and in ...

Embodiment 2

[0032]This embodiment is basically the same as Embodiment 1, especially in that:

[0033] In this embodiment, a preparation method for directionally growing a CdZnTe thin film on a graphene substrate comprises the following steps:

[0034] (1) Substrate preparation and pretreatment:

[0035] The substrate is prepared by CVD method, the specific method is as follows:

[0036] Clean the copper foil with acetone solution to remove organic impurities on the surface of the copper foil, then put the cleaned copper foil into the CVD growth chamber, feed argon gas to control the pressure to 340mTorr, and feed hydrogen gas at a flow rate of 20 sccm to heat to 1050°C and keep it for 30min, then remove the copper foil surface oxide, continue to keep the temperature constant, feed the mixed gas of methane and hydrogen at a flow rate of 8 sccm respectively for 20min, and control the volume fraction of hydrogen in the mixed gas in the CVD growth chamber to be 50%, the product generated on...

Embodiment 3

[0044] This embodiment is basically the same as the previous embodiment, and the special features are:

[0045] In this embodiment, a preparation method for directionally growing a CdZnTe thin film on a graphene substrate comprises the following steps:

[0046] (1) Substrate preparation and pretreatment:

[0047] The substrate is prepared by CVD method, the specific method is as follows:

[0048] Clean the copper foil with acetone solution to remove organic impurities on the surface of the copper foil, then put the cleaned copper foil into the CVD growth chamber, feed argon gas to control the pressure to 340mTorr, and feed hydrogen gas at a flow rate of 20 sccm to heat to 1050°C and keep it for 30min, then remove the copper foil surface oxide, continue to keep the temperature constant, feed the mixed gas of methane and hydrogen at a flow rate of 8 sccm respectively for 20min, and control the volume fraction of hydrogen in the mixed gas in the CVD growth chamber to be 50%, th...

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Abstract

The invention discloses a preparation method for directional growth of a tellurium-zinc-cadmium film on a graphene substrate. The preparation method comprises: preparing a single layer of graphene ona copper foil by using a CVD method, and preparing a layer of a directional tellurium-zinc-cadmium film by using the graphene as a substrate through a close-space sublimation method. According to thepresent invention, through the scheme for close-space sublimation preparation of the film by setting the distance between the substrate and the sublimation source, the graphene material is used as thesubstrate structure, and has the high lattice matching degree with the target CdZnTe film so as to prepare the CdZnTe film with good orientation; a purpose of the invention is to prepare the directional CdZnTe film on the graphene substrate by using the close-space sublimation method, such that the loss of the carrier transmission between the upper pole and the lower pole during the device preparation is low, the carrier transmission speed is improved, and the device transmission speed is improved; and compared to the CdZnTe single crystal growth process, the method of the invention has advantages of simplenes, lower cost, large area preparation, batch growth and high feasibility.

Description

technical field [0001] The invention relates to a preparation method of a cadmium zinc telluride material, in particular to a preparation method of a cadmium zinc telluride thin film, and also relates to a preparation method of a large-area cadmium zinc telluride material, which belongs to the technical field of inorganic non-metallic material manufacturing technology. Background technique [0002] CdZnTe is an important II-VI compound semiconductor. Because of its high average atomic number, excellent carrier transport performance and large forbidden band width, it can be widely used in the preparation of high-energy nuclear radiation detectors. The detector made of the material has the advantages of large absorption coefficient and high counting rate, and can work effectively at room temperature. Due to its good photoelectric performance, it shows great advantages in environmental monitoring, nuclear physics technology, ray analysis, safety detection, medical imaging and s...

Claims

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Application Information

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IPC IPC(8): C30B29/48C30B23/02C30B23/06C30B33/00C30B33/02C30B33/10C23C14/02C23C14/06C23C14/24
CPCC23C14/024C23C14/0629C23C14/24C30B23/025C30B23/066C30B29/48C30B33/00C30B33/02C30B33/10
Inventor 黄健谷青苗周新雨杨帆邹天宇唐可黄浩斐王林军
Owner SHANGHAI UNIV
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