A kind of film drying method and its application

A drying method and thin-film technology, applied in coatings, electrical solid devices, semiconductor devices, etc., can solve the problems of difficult to control the drying rate, high requirements for wind uniformity, and high requirements for drying devices, so as to reduce crystal defects and improve Effect of film quality and performance improvement

Active Publication Date: 2021-01-22
HANGZHOU MICROQUANTA SEMICON CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] Drying techniques include hot air assisted drying, vacuum drying, etc. These drying methods have high requirements on the uniformity of the wind and the drying device, and it is difficult to control the drying rate
Due to the characteristics of film drying: the natural volatilization of the solvent in the wet film tends to make the film white and rough, which requires rapid drying of the film; but to obtain a film with a large grain size, it is necessary to allow the solute in the wet film to crystallize. After a period of growth, the existing drying technology cannot solve this pair of contradictory problems

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0026] The first kind of application film drying method of the present invention prepares the method for perovskite thin film, comprises the steps:

[0027] Step 11. Prepare MAPbI 3 Precursor solution: mix 0.08gMAI and 0.23gPbI 2 Dissolve in 1 mL of DMF and add 1% DMSO by volume.

[0028] Step 12. Clean the ITO substrate: place the substrate prepared with ITO on the surface in acetone, isopropanol, alcohol, and deionized water for 10 minutes, and then dry it for later use.

[0029] Step 13, coating MAPbI 3 Membrane: ITO is placed under the blade of a knife coater and MAPbI is coated on its surface 3 For wet film, the coating gap is 100 μm, the liquid injection volume is 28 μL, the scraping speed is 380 mm / min, and the coating machine temperature is 55°C.

[0030] Step 14, film drying: after the coating is completed, take a film with an average pore size of 5nm to completely cover the MAPbI on the substrate ITO 3 Wet film, tightly adhered without air bubbles, transferred t...

Embodiment 2

[0032] The second method of applying a film drying method of the present invention to prepare a perovskite film comprises the following steps:

[0033] Step 21. Prepare PbI 2 Precursor solution: 0.461gPbI 2 Dissolve in 1 mL of DMF, add 1% DMSO by volume to prepare a precursor solution with a concentration of 1M.

[0034] Step 22. Clean the ITO substrate: Place the substrate prepared with ITO on the surface in acetone, isopropanol, alcohol, and deionized water for 10 minutes, and then dry it for later use.

[0035] Step 23, Coating PbI 2 Membrane: ITO is placed under the blade of a knife coater, and PbI is coated on its surface 2 For wet film, the coating gap is 100 μm, the liquid injection volume is 40 μL, the scraping speed is 400 mm / min, and the coating machine temperature is 50°C.

[0036] Step 24, film drying: After the coating is completed, take a film with an average pore size of 10nm to completely cover the PbI on the substrate ITO 2 Wet film, tightly adhered witho...

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PUM

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Abstract

The invention involves a thin film drying method, including the following steps: coating the wet film on the basis surface, add a layer of covering film or cover plate containing nano -grade holes on the surface of the wet film., Heat the wet film covering the covered film or cover plate, wait for the wet film to change from the state of the solvent to solid state, and unveil the coverage of the covering film or cover plate to complete the dryness of the wet film.The present invention also disclosed that the method is applied to the solar cells of perovskite.The invention can control the drying rate of the film, increase the growth time of the crystal in the film, increase the grain size, reduce the crystal defect, and improve the quality of the film.

Description

technical field [0001] The invention belongs to the technical field of solar cell preparation, and in particular relates to a film drying method and application thereof. Background technique [0002] In the fields of lithium batteries, perovskite solar cells, optical devices, etc., it is necessary to obtain the required films with special properties and functions through printing, spraying and other film coating technologies, and the drying of the films is very important. Proper drying technology can obtain a film with large grain size, high crystallinity, few defects, uniformity and low roughness, which is conducive to improving the performance of the film. [0003] Drying techniques include hot air assisted drying, vacuum drying, etc. These drying methods have high requirements on the uniformity of the wind and the drying device, and it is difficult to control the drying rate. Due to the characteristics of film drying: the natural volatilization of the solvent in the wet ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L51/48H01L51/42B05D3/02B05D7/24
CPCB05D3/0254B05D7/24H10K71/12H10K71/40H10K30/10Y02E10/549
Inventor 不公告发明人
Owner HANGZHOU MICROQUANTA SEMICON CO LTD
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