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Manufacturing method of polysilicon layer and polysilicon thin film transistor and manufacturing method thereof

A polysilicon thin film and polysilicon layer technology, which is applied in transistors, semiconductor/solid-state device manufacturing, semiconductor devices, etc., can solve problems such as grain boundary defects, poor electrical performance and reliability of polysilicon thin film transistors, and uneven grains

Active Publication Date: 2016-05-25
BOE TECH GRP CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The inventors have found that the existing method has at least the following problems: there are many defects (such as grain boundary defects, uneven grains, etc.) generated during the formation of polysilicon, and the formed polysilicon layer has poor uniformity, resulting in poor electrical performance of the polysilicon thin film transistor. and poor reliability

Method used

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  • Manufacturing method of polysilicon layer and polysilicon thin film transistor and manufacturing method thereof
  • Manufacturing method of polysilicon layer and polysilicon thin film transistor and manufacturing method thereof
  • Manufacturing method of polysilicon layer and polysilicon thin film transistor and manufacturing method thereof

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Embodiment

[0056] An embodiment of the present invention provides a method for manufacturing a polysilicon layer, such as figure 1 and figure 2 As shown, the method includes:

[0057] 11. Provide a substrate 100;

[0058] In this step, the substrate 100 is cleaned, and the substrate 100 may be a glass substrate or others.

[0059] 12. If figure 2 As shown in (b), a barrier layer 110 and a buffer layer 120 are sequentially formed on the substrate 100;

[0060] The barrier layer 110 is disposed between the substrate 100 and the buffer layer 120. When a trench is subsequently formed on the buffer layer 120, the barrier layer 110 can be used to prevent the substrate 100 from being etched. In practice, the buffer layer can also be formed directly on the substrate 100. 120, the barrier layer 110 is omitted.

[0061] Optionally, in this step, the barrier layer 110 and the buffer layer 120 are successively deposited on the substrate 100 using an enhanced chemical vapor deposition (PECVD) me...

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Abstract

The invention discloses a method for manufacturing a polysilicon layer and a method for manufacturing a polysilicon thin film transistor, and relates to the display field. The polysilicon layer formed by the method has high crystallization rate, uniform crystal grains, and few grain boundary defects, thereby improving the performance of the polysilicon thin film transistor. Electrical properties, improve the reliability of polysilicon thin film transistors. The manufacturing method of the polysilicon layer in the present invention includes: providing a substrate; forming a barrier layer and a buffer layer sequentially on the substrate; setting a plurality of grooves in the buffer layer through a patterning process, and forming a plurality of grooves in the buffer layer A seed crystal is formed on it; an amorphous silicon layer is formed on the buffer layer provided with grooves and the seed crystal; a heat treatment process is used to convert the amorphous silicon layer into a polysilicon layer. The invention is used to improve the quality of polysilicon film.

Description

technical field [0001] The present invention relates to the display field, in particular to a method for manufacturing a polysilicon layer, a method for manufacturing a polysilicon thin film transistor, a polysilicon thin film transistor formed by the method, an array substrate provided with the polysilicon thin film transistor, and a display device. Background technique [0002] Existing displays are mostly based on amorphous silicon (a-si), that is, thin film transistors (ThinFilm Transistor, TFT) on the display panel mostly use amorphous silicon semiconductor materials, but in comparison, polycrystalline silicon (Poly-Si) has a higher Electron mobility is considered to be a better TFT material than amorphous silicon. [0003] At present, when preparing a polysilicon TFT, a layer of amorphous silicon is usually prepared first; then the amorphous silicon layer is converted into a polysilicon layer by using an excimer laser crystallization (ELA) method; finally, a thin film ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/20H01L21/336H01L29/786H01L27/12
CPCH01L21/02532H01L21/02667H01L27/1288H01L21/02686H01L27/1281H01L27/1277H01L21/02592H01L21/02642H01L21/02645H01L21/02675H01L21/02694H01L21/30604H01L21/3081H01L21/3083H01L29/04H01L29/16H01L29/6675H01L29/78672
Inventor 王祖强
Owner BOE TECH GRP CO LTD
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