A preparation method of perovskite photovoltaic thin film based on double-effect seed growth method

A photovoltaic thin film and perovskite technology, applied in the field of solar cells, can solve the problems of insolubility and limitation of perovskite photovoltaic thin films.

Inactive Publication Date: 2021-07-06
WUHAN UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] The present invention proposes a method for preparing a perovskite photovoltaic film based on a double-effect seed growth method, the purpose of which is to obtain high-quality ternary mixed cations CsFAMAPbI 3 Perovskite photovoltaic thin film solves the problem that CsI is not easily soluble in (isopropanol) IPA solution in the prior art, so that two-step deposition method can prepare CsFAMAPbI 3 Perovskite photovoltaic thin films are limited by technical issues

Method used

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  • A preparation method of perovskite photovoltaic thin film based on double-effect seed growth method
  • A preparation method of perovskite photovoltaic thin film based on double-effect seed growth method
  • A preparation method of perovskite photovoltaic thin film based on double-effect seed growth method

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Experimental program
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Effect test

Embodiment 1

[0055] (1) Spin coating containing CsPbX on the substrate 3 PbI of seed solution 2 Precursor solution; where CsPbX 3 The components of the seed solution are, X=I, the concentration is 1M, the solvent is a DMF / DMSO mixed solvent, the DMF solvent volume ratio is 20%, CsPbX 3 Seed solution added to PbI 2 Accounting for the volume ratio of the whole mixed solution in the precursor solution is 5%; wherein PbI 2 The solvent of the precursor solution is a DMF / DMSO mixed solvent, the DMF solvent volume ratio is 80%, PbI 2 The concentration of the precursor solution was 1M.

[0056] (2) Heating and annealing at 50°C for 45s to obtain PbI 2 layer;

[0057] (3) Spin-coat FAI / MAI solution on PbI2 layer; Wherein FAI / MAI solution is the mixed solution of iodoformamidine (FAI) and iodomethylamine (MAI), wherein the mass ratio of FAI is 0%, FAI / MAI solution The total concentration of 50g / mL.

[0058] (4) Heating and annealing at 135° C. for 5 minutes to obtain a ternary mixed cation p...

Embodiment 2

[0060] (1) Spin coating containing CsPbX on the substrate 3 PbI of seed solution 2 Precursor solution; where CsPbX 3 The components of the seed solution are, X=I, the concentration is 2M, the solvent is a DMF / DMSO mixed solvent, the DMF solvent volume ratio is 80%, CsPbX 3 Seed solution added to PbI 2 Accounting for the volume ratio of the whole mixed solution in the precursor solution is 25%; wherein PbI 2 The solvent of the precursor solution is a mixed solvent of DMF / DMSO, the volume ratio of the DMF solvent is 100%, and the concentration is 2M.

[0061] (2) Heating and annealing at 120°C for 5 minutes to obtain PbI 2 layer;

[0062] (3) in PbI 2 Spin coating FAI / MAI solution on the layer; Wherein FAI / MAI solution is the mixed solution of iodoformamidine (FAI) and iodomethylamine (MAI), wherein the mass ratio of FAI is 100%, and the total concentration of FAI / MAI solution is 100g / mL.

[0063] (4) Heating and annealing at 180° C. for 60 minutes to obtain a ternary m...

Embodiment 3

[0065] (1) Spin coating containing CsPbX on the substrate 3 PbI of seed solution 2 Precursor solution; where CsPbX 3 The components of the seed solution are, X=I, the concentration is 1.5M, the solvent is a DMF / DMSO mixed solvent, the DMF solvent volume ratio is 50%, CsPbX 3 Seed solution added to PbI 2 Accounting for the volume ratio of the whole mixed solution in the precursor solution is 15%; wherein PbI 2 The solvent of the precursor solution is a DMF / DMSO mixed solvent, the DMF solvent volume ratio is 90%, PbI 2 The concentration of the precursor solution was 1.5M.

[0066] (2) Heating and annealing at 85°C for 3 minutes to obtain PbI 2 layer;

[0067] (3) in PbI 2 Spin coating FAI / MAI solution on the layer; Wherein FAI / MAI solution is the mixed solution of iodoformamidine (FAI) and iodomethylamine (MAI), wherein the mass ratio of FAI is 50%, and the total concentration of FAI / MAI solution is 75g / mL.

[0068] (4) Heating and annealing at 160° C. for 30 minutes t...

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Abstract

The invention discloses a method for preparing a perovskite photovoltaic thin film based on a double-effect seed growth method, and belongs to the technical field of perovskite solar cells. The present invention adopts two-step deposition method to prepare perovskite photovoltaic film, by 2 Add CsPbX to the precursor solution 3 Seed crystals provide crystal nuclei for the growth process of perovskite photovoltaic thin films, and then the PbI 2 The FAI / MAI solution is deposited on the layer and heated and annealed to obtain a perovskite photovoltaic film. The invention effectively improves the crystallinity of the perovskite photovoltaic thin film, the crystal grains of the perovskite are significantly enlarged, and the short-circuit current, open-circuit voltage, filling factor and photoelectric conversion efficiency of the solar cell are significantly improved. Furthermore, since Cs + Ions were introduced into the perovskite photovoltaic film, and the light stability of the perovskite photovoltaic film was improved. The method is simple and practical, low in cost and easy to promote, and has great reference significance for improving the photovoltaic performance of perovskite photovoltaic thin films.

Description

technical field [0001] The invention belongs to the technical field of solar cells, and relates to a perovskite solar cell preparation technology, in particular to a method for preparing a perovskite photovoltaic thin film based on a double-effect seed growth method. Background technique [0002] Perovskite solar cells are considered to be one of the most promising new solar cells because of their high photoelectric conversion efficiency, low manufacturing cost, and great potential for low-temperature fabrication. Since the perovskite solar cell was first proposed in 2009, its photoelectric conversion efficiency has increased from the initial 3.8% to 23.7%. The rapid development of perovskite solar cells in such a short period of time is due to the use of perovskite (ABX 3 ) organometal halide semiconductor (A:CH 3 NH 3 + ;CH 3 (NH 2 ) 2 + ;Cs + , B:Pb 2+ ;Sn 2+ ; 2+ , X:Cl - ;Br - ; I - ;SCN - ) as a light-absorbing material. In the field of high-efficiency...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L51/48H01L51/46H01L51/42
CPCH10K71/15H10K71/12H10K85/30H10K30/15Y02E10/549
Inventor 赵兴中汪少夫刘钰旻
Owner WUHAN UNIV
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