Preparation method for CdZnTe film with cylindrical structure

A columnar structure and thin film technology, applied in the field of columnar structure CdZnTe thin film and its preparation, can solve the problems of application influence, disordered thin film, difficult to achieve high resistance, low defects, etc., and achieve fewer grain boundary defects, high feasibility of batch growth, low cost effect

Inactive Publication Date: 2013-10-09
SHANGHAI UNIV
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  • Description
  • Claims
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Problems solved by technology

[0004] The CdZnTe film prepared by the near-space sublimation method is a polycrystalline film, and the growth of the film is generally non-oriented and disorderly. Relatively speaking, it is difficult to achieve high resistance and low defects for such a film, which is very important for high-performance radiation detectors. applications affecting

Method used

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  • Preparation method for CdZnTe film with cylindrical structure
  • Preparation method for CdZnTe film with cylindrical structure
  • Preparation method for CdZnTe film with cylindrical structure

Examples

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Embodiment 1

[0019] The preparation process and steps of this embodiment are as follows:

[0020] (a) Preparation of CdZnTe single crystal sublimation source: According to the known prior art, put high-purity Cd, Zn, Te into a quartz tube, and use moving heating method to grow under high vacuum. Uniform CdZnTe single crystal, wherein the molar content of zinc is 5%, and the grown crystal slice is used as the sublimation source;

[0021] (b) Substrate pretreatment: use glass coated with a transparent conductive layer FTO as the substrate, and ultrasonically clean the substrate with deionized water, acetone and ethanol for 15 minutes respectively to remove impurities and organic substances on the surface, dry and put Into the close space sublimation reaction chamber;

[0022] (c) CdZnTe thin film growth process: turn on the mechanical pump to evacuate the sublimation chamber to below 3Pa, then turn off the mechanical pump, feed argon gas to adjust the pressure to 200Pa, and close the gas cy...

Embodiment 2

[0025] The preparation process and steps of this embodiment are as follows:

[0026] (a) Preparation of CdZnTe single crystal sublimation source: According to the known prior art, put high-purity Cd, Zn, Te into a quartz tube, and use moving heating method to grow under high vacuum. Uniform CdZnTe single crystal, wherein the molar content of zinc is 5%, and the grown crystal slice is used as the sublimation source;

[0027] (b) Substrate pretreatment: ordinary soda-lime glass is used as the substrate, and the substrate is ultrasonically cleaned with deionized water, acetone and ethanol for 15 minutes to remove impurities and organic matter on the surface, and then placed in the near space after drying sublimation reaction chamber.

[0028] (c) CdZnTe film growth process: turn on the mechanical pump to evacuate, pump the air pressure in the sublimation chamber to below 3Pa, then turn off the mechanical pump, feed argon gas to adjust the air pressure to 250Pa, and close the gas...

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Abstract

The invention relates to a CdZnTe film with a cylindrical structure, and a preparation method for the same. The method comprises the following steps of: (a) preparing a CdZnTe monocrystal sublimation source; (b) pre-treating a substrate; (c) growing the CdZnTe film; and (d) polishing, corroding and annealing the CdZnTe film, wherein the thickness of the prepared CdZnTe film with the cylindrical structure is 100-500 mm. Compared with CdZnTe monocrystal growth, the method disclosed by the invention is simple in process, lower in cost, capable of preparing in a large scale, batched in growth, and high in feasibility. Compared with the conventional CdZnTe film, the cylindrical CdZnTe film prepared by the method disclosed by the invention is fewer in crystal boundary defects, and higher in electrical resistivity which is up to 6*10<9> Ohm.cm.

Description

technical field [0001] The invention relates to a columnar structure CdZnTe thin film and a preparation method thereof, belonging to the technical field of inorganic non-metal material manufacturing technology. Background technique [0002] CdZnTe is important - Group compound semiconductor, due to its high average atomic number and large forbidden band width, the detector made of this material has a large absorption coefficient, high count rate, especially without any cooling equipment Can work at room temperature. Its superior photoelectric performance can be widely used in X-ray fluorescence analysis, safety detection, medical imaging and space research. However, due to the inherent physical properties of CdZnTe, crystals grown by the melt method have many defects such as composition inhomogeneity, grain boundaries, twins, dislocations, inclusion phases, and precipitation. CdZnTe single crystal materials are not suitable for large-area flat panel detectors. Therefor...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/46C30B28/12
Inventor 王林军王君楠黄健姚蓓玲唐可朱悦张凯勋陶骏沈心蔚
Owner SHANGHAI UNIV
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