7results about How to "Refine grain size" patented technology

This invention provides an ultra-high strength, low density Al-Mg-Zn-Sc-Zr-based alloy and its preparation method, belonging to the field of aluminum alloy material technology. The ultra-high strength, low density Al-Mg-Zn-Sc-Zr-based alloy provided by this invention, by mass fraction, has the following chemical composition: Mg 3.0~8.0%, Zn 1.0~5.0%, Cu 0.4~1.0%, Mn 0.1~0.8%, Ag 0.05~0.3%, Sc 0.01%~0.3%, Zr 0.05~0.3%, with the balance being Al. This invention achieves this by precisely controlling the elemental ratios of Mg, Zn, Cu, and Ag, resulting in an alloy that maintains its low density while exhibiting a strong age-hardening effect. Simultaneously, the reasonable addition of trace elements such as Mn, Sc, and Zr enables the alloy to possess a dispersion strengthening effect. Combined with heat treatment and hot deformation processes, this further improves the strength and ductility of the aluminum alloy.

The application discloses a kind of corrosion-resistant high-strength magnesium alloy material and preparation method thereof, it is related to magnesium alloy material technical field, by the following chemical components: Al, Zn, Mn, Y, Ce, Ca, Zr, Sb, Sr, Ta, In, Mg and other inevitable impurities.It is prepared using vacuum induction melting, ternary compound refining agent impurity removal, high-pressure die casting forming, vacuum fine-grain heat treatment, then through phytic acid-potassium permanganate-cerium nitrate-ammonium metavanadate composite passivation treatment.Ta, In, Sb, Sr cooperates to refine grain, weakens micro-electrochemical corrosion, nanometer fluorine carbon cerium ore refining agent purifies melt, and cerium-vanadium compound passivation film is dense and stable.The obtained material has high tensile strength and excellent corrosion resistance.

This invention provides a high-flatness copper-nickel-tin-zinc alloy and its preparation method, belonging to the field of copper alloy manufacturing technology. The high-flatness copper-nickel-tin-zinc alloy provided by this invention, by mass percentage, comprises the following chemical composition: Ni: 0.2-3.0%, Sn: 0.2-2.0%, Zn: 0.05-0.2%, Fe: 0.01-0.1%, P: 0.02-0.08%, Nb: 0.05-0.28%, Ta: 0.05-0.2%, La: 0.02-0.1%, and the balance Cu. The results of the examples show that the copper-nickel-tin-zinc alloy of this invention has a tensile strength >600 MPa and an elongation A... 11.3 The heat shrinkage rate is 5-7%, the hardness is >180HV, the conductivity is ≥40%IACS, the bending rate is 7-8mm / m, the flatness is ≤0.05mm, and the heat shrinkage rate is ≤0.006%.

This invention discloses a perovskite thin film, a perovskite device, and a preparation method thereof. The preparation method of the perovskite thin film includes: coating a perovskite precursor solution onto a substrate to form a liquid film; removing at least a portion of the solvent from the liquid film using a vacuum process to form an intermediate phase film; and performing an annealing treatment to form the perovskite thin film; wherein the perovskite precursor solution contains an excess of A-site cations. The preparation method provided by this invention effectively compensates for the loss of A-site cations during the vacuum process, inhibits the formation of residual B-site cation salts, reduces device voltage loss, increases the grain size of the perovskite thin film, improves carrier transport and extraction, and increases the short-circuit current of the device; it is simple and easy to implement, low in cost, and requires no additional steps, making it suitable for the preparation of large-area perovskite thin films; it reduces the number of steps in perovskite device preparation, lowers material costs, and facilitates industrial development.

The application provides a high-toughness ferrite-pearlite type non-quenched and tempered steel and a manufacturing method thereof, and the composition of the steel is as follows: C 0.35-0.42%, Si 0.35-0.45%, Mn 1.25-1.65%, P ≤0.010%, S 0.025-0.050%, Cr 0.10-0.30%, Nb 0.02-0.05%, Mo 0.010-0.050%, Ni 0.10-0.25%, Al 0.025-0.045%, V 0.10-0.30%, Cu ≤0.10%, Ti 0.010-0.040%, [N] 120-160ppm, [H] ≤1.0ppm, T.O ≤10ppm; the rest is Fe and inevitable impurity elements; the steel is combined with a controlled rolling and controlled cooling process, the ferrite content is increased, the strength and toughness are improved, the strength and toughness are matched, and the cutting performance is improved.

This invention discloses a strontium titanate ceramic material, a grain boundary layer ceramic substrate, its preparation method, and its application. The invention involves mixing SrTiO3 powder with dopants, sintering, grinding, and sieving to obtain raw material A. The dopants are one or more selected from Nb2O5 powder, La2O3 powder, MgO powder, and Nd2O3 powder. SrTiO3 powder and glass powder are mixed, sintered, ground, and sieved to obtain raw material B. Raw material A, raw material B, an adhesive, and an organic solvent are mixed and molded to obtain a film. The film is then subjected to debinding and reduction sintering to obtain the strontium titanate ceramic material. The strontium titanate ceramic material of this invention possesses advantages such as increased grain size, uniform growth, and stable electrical properties, making it suitable for manufacturing high-performance ceramic capacitors and demonstrating broad application potential in the field of electronic components.

The invention belongs to the technical field of perovskite solar cells, and provides a perovskite thin film based on a volatile additive and a preparation method and application thereof. According to the perovskite thin film provided by the invention, the perovskite matrix and the volatile additive are used as main raw material components, and the volatile additive comprises at least one of a beta-diketone compound, a carboxylic acid compound, an amide compound and a nitrogen-containing heterocyclic compound. The volatile additive promotes crystallization of perovskite in a large-grain and highly preferred orientation mode, crystal growth can be effectively regulated and controlled in the annealing process, bulk phase or surface defect passivation is achieved, interface performance is optimized, and finally the high-quality perovskite thin film with larger grain size and remarkably reduced grain boundaries is successfully prepared. And the volatile additive does not remain in the film after volatilization. The perovskite thin film provided by the invention can be used for preparing a perovskite solar cell device.