A thin film preparation method of a quasi-one-dimensional structure material with controllable orientation

A technology for film preparation and dimensional structure, which is applied in sustainable manufacturing/processing, metal material coating process, final product manufacturing, etc., can solve the problem of uncontrollable quasi-one-dimensional material orientation, achieve simple and reliable adjustment methods, and reduce costs , the effect of good application potential

Active Publication Date: 2021-02-26
HUAZHONG UNIV OF SCI & TECH +1
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] In view of the above defects or improvement needs of the prior art, the object of the present invention is to provide a method for preparing a thin film of a quasi-one-dimensional structure material with controllable orientation, wherein by improving the key process parameters of the preparation method, the vertical structure of a specific structure is adopted. Depositing in an evaporating tube furnace, realizing the deposition and orientation control of quasi-one-dimensional material films, and obtaining a semiconductor film with a controllable orientation that does not depend on the substrate. Compared with the existing technology, it can effectively solve the problem that the orientation of quasi-one-dimensional materials cannot be controlled. question

Method used

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  • A thin film preparation method of a quasi-one-dimensional structure material with controllable orientation
  • A thin film preparation method of a quasi-one-dimensional structure material with controllable orientation
  • A thin film preparation method of a quasi-one-dimensional structure material with controllable orientation

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[0039] Taking the substrate to be deposited below as an example on the substrate where an N-type buffer layer of a thin film solar cell has been deposited, the preparation method of the present invention comprises the following steps:

[0040] 1) Set as figure 1 The evaporation tube furnace shown.

[0041] 2) Preparation of substrate required for deposition of semiconductor thin film. For example, CdS thin films, ZnO thin films, TiO 2 Thin film and other common thin film solar cell N-type buffer layer to obtain the substrate to be deposited.

[0042] 3) Weigh 0.2g-0.3g material powder and sieve it with a 50-mesh sieve and put it into the crucible as the evaporation source, shake it gently to spread the powder on the bottom of the crucible, and then put the evaporation source in the middle of the heating area of ​​the tube furnace . The crucible can be a quartz crucible with a diameter of 8-15mm. The evaporation source is an anisotropic quasi-one-dimensional material, such...

Embodiment 1

[0048] Embodiment 1: Orientation modulation of different antimony sulfide absorption layers

[0049] (1) Cut the ITO conductive glass into a size of 5cm×5cm, respectively use detergent, isopropanol and absolute ethanol to ultrasonically clean it for 30min, and then dry it with nitrogen for later use.

[0050] (2) Preparation of substrate: Deposit cadmium sulfide on the washed ITO with a thickness of about 50 nm by using a chemical water bath method. Specifically, pour 220mL of deionized water, 30mL of 0.05mol / L cadmium sulfate solution and 39.3mL of 25% ammonia water into the beaker, and stir at 67°C for 3 minutes, then add 15mL of 1.5mol / L The thiourea was poured in, and the ITO conductive glass was put in at the same time, and the constant temperature was reacted for 16 minutes. After the reaction, take it out and dry it with nitrogen gas to obtain a cadmium sulfide substrate.

[0051] (3) Weighing of evaporation source: Weigh 0.2g of antimony sulfide powder with a purity ...

Embodiment 2

[0060] Example 2: Orientation Modulation of Vertical Bismuth Sulfide Absorbing Layer

[0061] (1) Cut the ITO conductive glass into a size of 5cm×5cm, respectively use detergent, isopropanol and absolute ethanol to ultrasonically clean it for 30min, and then dry it with nitrogen for later use.

[0062] (2) Preparation of substrate: This step is the same as step (2) in Example 1.

[0063] (3) Selection of evaporation source: Weighing 0.2g of 98% bismuth sulfide powder with a purity of 0.2g is finely screened with a 50-mesh sieve and placed in a quartz crucible with a bottom diameter of 12mm. The crucible is placed in the middle of the quartz tube heating zone using a stainless steel shelf. .

[0064] (4) Purification of powder: set the heating program, raise it to 630°C at 16°C / min, put the substrate into air steam, and purify once. After the program is finished, open the lid and let it cool down to room temperature naturally.

[0065] (5) Preparation of film: such as figur...

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Abstract

The invention discloses a method for preparing a thin film of a quasi-one-dimensional structural material with controllable orientation. The method is based on a vertical evaporation tube furnace, and specifically includes the following steps: (1) placing the evaporation source material and the substrate to be deposited on the In the vertical evaporation tube furnace; (2) vacuum treatment, so that the vacuum degree of the vertical evaporation tube furnace remains at the preset vacuum degree and the fluctuation does not exceed ± 1Pa; (3) heat treatment in the heating zone, so that The evaporation source material is evaporated and deposited on the substrate to form a thin film; during the preparation process, the orientation of the formed quasi-one-dimensional material film can be controlled by controlling the parameters of the evaporation process. The present invention improves the key process parameters of the preparation method, adopts a vertical evaporation tube furnace with a specific structure for deposition, realizes the deposition and orientation control of a quasi-one-dimensional material film, and obtains a semiconductor film with a controllable orientation independent of the substrate , compared with the prior art, it can effectively solve the problem that the orientation of quasi-one-dimensional materials cannot be controlled.

Description

technical field [0001] The invention belongs to the technical field of semiconductor film preparation, and more specifically relates to a film preparation method of a quasi-one-dimensional structure material with controllable orientation, which is suitable for the synthesis of anisotropic quasi-one-dimensional structure materials such as antimony sulfide with controllable orientation . Background technique [0002] Anisotropic materials such as antimony sulfide, antimony selenide, and bismuth sulfide have been rapidly developed and widely used in the field of optoelectronics. Thin film crystals of this type of material are composed of single chains of ribbon units, which are bound by strong chemical bonds within the single chains, and the chains are bound by weak van der Waals forces, which are easy to split along the direction of the chains, and are called quasi-one-dimensional structure materials. Due to the low symmetry of the material itself, its photoelectric propertie...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/24C23C14/06H01L31/18
CPCC23C14/0623C23C14/24H01L31/18Y02P70/50
Inventor 宋海胜张欢陈世武
Owner HUAZHONG UNIV OF SCI & TECH
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