72results about How to "Same orientation" patented technology

The invention relates to a carbon-nano-tube-reinforced polyethylene tube which comprises, by weight, 70-100 parts of high-density polyethylene and 1-10 parts of carbon nano tubes. The carbon-nano-tube-reinforced polyethylene tube has the advantages that the carbon-nano-tube-reinforced polyethylene tube has excellent suppleness and formability; the carbon nano tubes are uniformly distributed and basically consistent in orientation in a polyethylene matrix so as to be firmly combined with the matrix, free from scattering and loss due to friction and good in durability; and the carbon nano tubes are conflict-free with other auxiliaries and good in synergy, and the antistatic performance, the mechanical strength and the thermal ageing performance are improved.

The invention discloses a method for preparing a titanium dioxide array film on a flexible metallic matrix and application of the method in a lithium ion battery. The method comprises the following steps of: soaking the matrix into sulfuric acid cleaning solution to perform ultrasonic cleaning, then soaking the matrix into acetone to perform ultrasonic cleaning, and finally flushing the matrix by using deionized water; adding titanium salt-containing solution and urea into saturated sodium chloride solution to prepare reaction solution, and putting the reaction solution into a stainless steel autoclave with a Teflon lining; soaking the cleaned matrix into the reaction solution, and performing reaction for 2 to 5 hours at the temperature of between 150 and 180 DEG C; sequentially flushing the film obtained after reaction together with the matrix by using sulfuric acid cleaning solution, deionized water and anhydrous ethanol; and performing vacuum drying for 10 to 15 hours at the temperature of between 60 and 100 DEG C to prepare an electrode material. The titanium dioxide nano-rod array film is prepared on the copper/titanium matrix by one-step molding according to the method to form an electrode used for the lithium ion battery; the method is simple, feasible and low in cost; and the film has regular size arrangement, ideal crystallization and large specific surface area, and shows good multiplying power performance on lithium ion intercalation and deintercalation.

The invention provides a preparation method of a surface-enhanced Raman scattering (SERS) substrate polarized by a metal nano particle array and belongs to the fields of optical technology and bio-sensors. The invention aims to disclose a metal nano particle array SERS active substrate being large in area, high in efficiency, low in cost, good in uniformity and high in sensitivity. On the basis of the principles of cooperation of nano structural polarization configuration and molecular configuration, through a laser evanescent stationary wave focus deposition technology, the polarized fixed noble nano particle array SERS active substrate is prepared. The preparation method achieves ultra-strong SERS enhancement and is beneficial to further development of a polarized light SERS mono-molecular detection technology.

The invention provides a bionic biomineralized artificial bone repair material as well as a preparation method and an application thereof. The material consists of a cross-linked collagen matrix and biomineralized collagen/hydroxyapatite composite powder dispersed in the matrix, wherein the mass ratio of the collagen matrix to the biomineralized collagen/hydroxyapatite composite powder is (9-1) to(1-9). The bionic biomineralized artificial bone repair material provided by the invention is a collage-based bionic biomineralized artificial bone, which can meet a demand of artificial bone and tissue suturing in a clinical GTR or GBR operation; the artificial bone repair material consists of hydroxyapatite and pure collagen, and the two ingredients are major ingredients of human natural tissues, so that the artificial bone repair material is free from toxicity; and influence to a material structure and an osteogenesis effect is avoided, and good biocompatibility is guaranteed. Due to the existence of the cross-linked collagen matrix, problems of a material which can get dispersed easily, and is too high in degradation speed, poor in mechanical performance and the like can be solved; and the bionic construction of nano-hydroxyapatite and collagen is achieved.

The invention relates to a high-magnetic-conductivity wave-absorbing sheet and tape-casting slurry and a preparation method therefor. The tape-casting slurry for the high-magnetic-conductivity wave-absorbing sheet comprises the following ingredients in parts by weight: 80-85 parts of soft magnetic alloy powder, 8-12 parts of organic insulating elastic body, 3-5 parts of nonvolatile organic solvent, 2-3 parts of plasticizer and 1-3 parts of dispersing agent. The high-magnetic-conductivity wave-absorbing sheet is molded from the tape-casting slurry through a tape-casting process. The tape-casting slurry for the high-magnetic-conductivity wave-absorbing sheet has high wettability for the soft magnetic alloy powder; the prepared wave-absorbing sheet has high magnetic-conductivity, high resistivity and high flexibility; in addition, the preparation method is easy to control; and the prepared wave-absorbing sheet is high in yield and stable in performance.

The invention belongs to the field of polycrystalline silicon cast ingots and particularly relates to a quick-melting and slow crystal growth high-efficiency polycrystalline silicon ingot casting process. The quick-melting and slow crystal growth high-efficiency polycrystalline silicon ingot casting process comprises the steps of loading, vacuumizing and preheating, melting and preserving heat, growing the crystal, annealing, cooling and blocking, wherein the melting and heat preserving phase and the crystal growing phase are carried out according to the following steps: introducing argon gas into an ingot casting furnace to be used as shielding gas; then heating and raising temperature to enable the temperature of a quartz crucible to reach 1545-1560 DEG C within 4-5 hours, and preserving heat for 7-8 hours; reducing the temperature to 1440 DEG C after 0.5 hour; reducing the temperature of the quartz crucible from 1440 DEG C to 1420 DEG C through 29 hours and finishing the central crystal growing phase of the polycrystalline silicon cast ingot; reducing the temperature to 1410 DEG C after 3 hours to finish the corner crystal growing phase of the polycrystalline silicon cast ingot. The quick-melting and slow crystal growth high-efficiency polycrystalline silicon ingot casting process disclosed by the invention has the advantages that firstly, the photoelectric conversion efficiency of a solar cell can be improved from 17.1 percent to 17.4 percent; secondly, the time of the whole process is shortened while the quality of the polycrystalline silicon cast ingot is improved.

The present invention discloses a method for preparing a CdZnTe epitaxial film on a GaAs single crystal substrate. A purpose of the present invention is to solve the technical problem of poor quality of the CdZnTe epitaxial film prepared through the CdZnTe epitaxial film preparation method. The technical scheme comprises: before growing, carrying out chemical etching and pre-heating treatment on the GaAs substrate, placing the prepared CdZnTe growth source and the GaAs substrate into a growing chamber, adjusting the distance between the source and the substrate, pumping vacuum, introducing Ar to achieve the target pressure, turning on a heating system to heat, and stopping the heating after completing deposition. According to the present invention, the continuous mass transfer from the source to the substrate is inhibited by introducing the baffle during the cooling process after the growing ends so as to improve the density of the film and reduce the roughness, the thicker CdZnTe film grows by adopting the laminated growing manner, and the lattice mismatch is reduced by depositing ZnTe on the GaAs as the buffer layer so as to improve the quality of the epitaxial film.

The invention discloses a method for preparing a ZnO nano-rod array by a pulse electromagnetic field. The method provided by the invention solves the problem that the existing ZnO nano-rod array has a small length-diameter ratio and low verticality. The method provided by the invention comprises the following steps of putting fluorine-doped tin oxide (FTO) electrically-conductive glass into a supersonic wave washer, carrying out cleaning, dropwisely adding a mixed solution of zinc acetate, ethanolamine and ethylene glycol monomethyl ether on the cleaned FTO electrically-conductive glass, uniformly spreading the mixed solution on the cleaned FTO electrically-conductive glass by a spin coater, putting the cleaned FTO electrically-conductive glass coated with the mixed solution into a tube-type heating furnace, carrying out heating to obtain a ZnO film, dissolving zinc chloride into deionized water to obtain a precursor solution, adjusting a pH value of the precursor solution by ammonia water, putting the FTO electrically-conductive glass coated with the ZnO film into a reactor, pouring the precursor solution into the reactor, carrying out pulse electromagnetic field treatment on thereaction system in the reactor by a pulse electromagnetic field generation device, then transferring the reactor into an incubator, carrying out a hydro-thermal reaction process, washing off white precipitates on the surface of the FTO electrically-conductive glass by deionized water, putting the FTO electrically-conductive glass obtained by the previous step into a constant-temperature dry box and carrying out drying to obtain the ZnO nano-rod array. The method provided by the invention does not adopt a surfactant, and has simple processes, low energy consumption and no pollution.

The invention relates to a method for preparing a graphene single crystal wafer at low temperature, and the method comprises: depositing a layer of binary copper-based alloy thin film on the surface of a single crystal insulating substrate, placing the alloy thin film in a chemical vapor deposition system for annealing treatment, introducing a gaseous carbon source, and epitaxially growing the graphene single crystal wafer at the low temperature. According to the method, wrinkles of graphene are reduced, the electrical property of the graphene is further improved, and the production cost of the graphene single crystal wafer is reduced.

The invention discloses a preparation method for a regular-hexagonal-prism-shaped magnesium-doped zinc oxide film. The microstructure of the magnesium-doped zinc oxide film is in the shape of a regular hexagonal prism, and possesses the advantages that the crystallization degree is high and surface defects are less. The preparation method of the film comprises separately dissolving zinc acetate, magnesium acetate, triethanolamine and ammonia water in a mixture of glycol and ice water, getting proper amount of the solution and a cleaned substrate, transferring into a teflon inner container of a hydrothermal kettle for hydrothermal reaction, after the reaction is finished, performing washing, drying and annealing processing on the substrate, so as to prepare a layer of the regular-hexagonal-prism-shaped magnesium-doped zinc oxide film on the substrate. The preparation method is simple in technology, good in repeatability, low in cost, strong in controllability, low in synthesis temperature, green and friendly to environment. The obtained product is in the shape of a regular hexagonal prism, is good in crystallinity, high in purity, less in surface defects, uniform in morphology distribution and consistent in orientation, and possesses potential application prospect and scientific research value in the fields of photoelectric materials new energy.

The invention discloses a copper conic liner and a preparation method thereof. The copper conic liner comprises a supporting column body, a liner top, an inner wall surface and an outer wall surface, wherein the supporting column body is connected with the liner top. The preparation method is characterized in that a laser fusion covering type rapid forming method is adopted; the temperature gradient of a bath formed by laser beams is utilized, and the hot flow dispersing direction is controlled through a water cooling system, on that basis, small columnar dendrite grains in a fusion covering layer can directionally grow in the axis direction of the liner, and thus the liner of which each part has the directional solidifying structure property can be prepared. The copper conic liner prepared by the method is outstanding in stretching performance in the axis direction, so that the metal jet extending performance can be effectively improved, the jet breakup time can be prolonged, and as a result, the penetration performance can be improved; in addition, the preparation method has the advantages of being short in formation time, high in size accuracy, and high in material utilization rate.

The invention belongs to the technical field of radiation detection with preparation of semiconductor materials and discloses a cesium lead halide perovskite thick film as well as preparation and application thereof. The preparation method comprises the following steps: (1) dispersing a cesium lead halide perovskite material on a substrate, and performing heating to increase the temperature to being greater than the melting point of the cesium lead halide perovskite till the cesium lead halide perovskite is completely molten to a liquid state; (2) covering a perovskite material by quartz sheets, and uniformly dispersing the liquid perovskite material covered by the quartz sheets on the substrate; and (3) performing cooling by slowly reducing the temperature at a velocity of 0.1-5 DEG C/min, and peeling off the quartz sheets, so as to obtain the perovskite thick film adhered to the substrate. Due to improvement of overall process procedure designing (including temperature control procedures) and the like of the preparation method, a thick film with good performance, consistent orientation, stability, high sensitivity and large areas can be prepared, and the problems that in the prior art, the process is complex, the sensitivity is low, the orientation is inconsistent, and the like, can be solved.

The invention discloses an organic single-crystal semiconductor structure and a preparation method thereof. The organic single-crystal semiconductor structure comprises a substrate, and an auxiliary growth layer, an electrode and an organic single-crystal semiconductor layer which are deposited on the substrate from bottom to top, and the organic single-crystal semiconductor layer is an organic semiconductor single-crystal thin film with basically unchanged morphology before and after crossing the electrode, and the organic semiconductor single-crystal thin film can realize full coverage on abottom contact type substrate with any shape and any size, so that an approximately ideal morphology on an industrial scale is obtained. The organic single-crystal semiconductor structure can be usedas a key part of an organic field effect transistor to realize rapid transmission of carriers. On the basis of the semiconductor structure, the invention further provides an organic field effect transistor device which is convenient to prepare and efficient in performance, and has a good application prospect in the field of organic photoelectricity.

A preparation method of TiAl alloy quasi seed crystals comprises steps as follows: TiAl alloy ingots which are consistent in lamellar orientation and parallel with the axial direction are obtained through smelting and casting by a vacuum water-cooled copper crucible induction melting furnace; heat treatment is performed, and lamellar structure orientations of the TiAl alloy ingots are kept stable with a quick heating method during heat treatment, so that the quasi seed crystals capable of controlling lamellar orientations during directional solidification are obtained. With the adoption of the method, alloys with primary phases being beta phases can have lamellar structures consistent in orientation and parallel with axial directions of the ingots, and orientations of the lamellar structures of the seed crystals can be controlled under the condition of quick heating.

The invention provides a carbon nanotube fiber array cold cathode preparation method. The method includes the steps that a super-long orientation carbon nanotube is composited on a silicone substrate provided with a plurality of layers of metal catalysts in a deposition mode through a chemical vapor deposition method, and laddering and spinning are conducted on the composited carbon nanotube through a spinning method to continuously prepare orientation carbon nanotube fibers; then, microhole arrays are prepared in a conductive substrate in an etching mode or a laser boring mode, the spinning carbon nanotube fibers are implanted into the microhole arrays, and the length of the fibers is clipped according to the proper requirement; next, metal nanometer powder or metal micrometer powder is prepared into slurry, microholes in the conductive substrate are filled with the slurry in a microhole grouting mode, and then the conductive substrate is placed in a vacuum furnace; finally, annealing treatment is conducted on the conductive substrate at the temperature ranging from 400 DEG C to 900 DEG C under the protection of inert gases, or hydrogen reduction annealing treatment is conducted in the hydrogen atmosphere, or laser ablation is conducted under the protection of the inert gases, and the conductive substrate generated after the annealing treatment or the laser ablation treatment is conducted is the carbon nanotube fiber array cold cathode.

The invention provides a method for inducing growth of a REBCO superconducting block by using a single seed crystal bridge structure.The method comprises the following steps of: preparing RE123 and RE211 pure-phase powder, proportioning according to the components of RE123, 30mol% of RE211 and 1wt% of CeO2, fully grinding and uniformly mixing to obtain precursor powder; according to different diameters of molds, weighing proper mass of the powder, putting the powder into the molds, and pressing the powder into one cylindrical seed crystal bridge, 2-3 buffer layers and one precursor; sequentially placing the seed crystal, the seed crystal bridge, the buffer layer and the precursor from top to bottom; making the seed crystal, the seed crystal bridge and the buffer layers form the single seed crystal bridge type structure, wherein the seed crystal is placed in the center of the upper surface of the seed crystal bridge, the seed crystal bridge is erected above the buffer layers, and the buffer layers are arranged in a row along the crystal orientation of the seed crystal [110]; and placing the placed precursor and the single seed crystal bridge structure in a growth furnace to perform top seed crystal melt texture growth so as to realize (110)//(110) oriented induced growth of the REBCO superconducting block.

The invention discloses a preparation method for a CdS or CdSe single-crystal nanowire array. The preparation method comprises the following steps: placing CdS or CdSe solid body on a substrate; then, placing the substrate in a high-temperature heating area of a tube furnace; vacuumizing the tube furnace into which the substrate is placed and introducing a protective gas; raising the temperature of the tube furnace, maintaining the pressure intensity in the tube furnace at 10 to 2,000 Pa, reacting for 0.1 to 2 hours, and naturally decreasing the temperature of the tube furnace to room temperature after the reaction is ended. The preparation method is low in cost, high in controllability and simple in steps; the CdS single-crystal nanowire array or the CdSe single-crystal nanowire array prepared by the preparation method are arranged tidily and are consistent in crystal orientation, high in crystallinity degree and low in defect rate, show excellent photoelectric properties, and have a very important research value and a very important application prospect in the aspects of nano-scale optoelectronic devices, solar cells, photocatalysis, bio-sensing and the like.

Disclosed are a polycrystalline silicon ingot, a method for producing the same, and a crucible. The crucible has a rough bottom surface, and has a plurality of three-dimensional geometrical shapes of spatial distribution; the inner surface of the crucible is coated with at least one coating, and there are particulate substances as heterogeneous nucleation sites for silicon in the coating on the bottom surface of the crucible. According to an embodiment of the present invention, the bottom surface of the crucible is coated with at least one coating, and the particulate substances in the coating can be used as silicon nucleation sites during the subsequent crystal growth, inhibit the formation of crystal nuclei in other regions, so that the distribution of crystal grains is more uniform. In addition, crystal grains whose nuclei are formed first start to compete in a pit at the bottom surface of the crucible, and crystal grains with a certain crystal orientation predominate during the competing process and are ultimately retained, so the orientations of the nuclei tend to be consistent, i.e., the polycrystalline silicon ingot grown according to the method has a uniform crystal grain size, and a consistent crystal grain orientation, and has a reduced dislocation density inside the crystal and a prolonged minority carrier lifetime, thereby increasing the conversion efficiency of the polycrystalline silicon solar battery.

The invention provides a method for preparing a graphene single crystal wafer on a copper-based textured thin film substrate, comprising the following steps of: S1, providing a copper-based textured thin film substrate, and placing the copper-based textured thin film substrate in a chemical vapor deposition system for annealing treatment; and S2, introducing a gaseous carbon source, and epitaxially growing a graphene single crystal wafer on the surface of the copper-based textured thin film substrate. According to the method for preparing the graphene single crystal wafer on the copper-based textured thin film substrate, the problem of high cost caused by epitaxial growth of the single crystal graphene wafer on the single crystal substrate is solved, large-scale application of the graphenesingle crystal wafer is facilitated, and the method has important significance in wide application of graphene in the field of microelectronics.

The invention discloses a fiber-plastic profile floor tile and a preparation method thereof, and belongs to the technical field of composite materials. According to the fiber-plastic profile floor tile, a fiber-plastic composite material prepared from a waste textile fabric and waste plastic serves as the raw material, the cost is low, the floor tile is green and environmentally friendly, and meanwhile, recycling of the waste textile fabric and the waste plastic is achieved, so the floor tile has extremely high application prospects in the aspects of ground decoration and the like; the fiber-plastic composite material used by the fiber-plastic profile floor tile provided by the invention has more excellent mechanical properties than a single component in the fiber-plastic composite material, so that the floor tile is longer in service life; the fiber-plastic profile container bottom plate is provided with the anti-abrasion layer made of the fiber-plastic composite material doped with the anti-abrasion agent as the raw material, and therefore the service life of the floor tile is further prolonged; and the fiber-plastic profile floor tile provided by the invention is provided with a waterproof layer, and the waterproof layer can effectively prevent liquid from corroding the fiber-plastic composite material, so that the service life of the floor tile is further prolonged.

The invention discloses a fiber-plastic profile container bottom plate and a preparation method thereof, and belongs to the technical field of composite materials. The bottom plate body of the fiber-plastic profile container bottom plate provided by the invention takes the fiber-plastic composite material prepared from the waste textile fabric and the waste plastic as a raw material, so that the cost is low, the fiber-plastic profile container bottom plate is green and environment-friendly, and meanwhile, the waste textile fabric and the waste plastic are recycled, and therefore, the container bottom plate has an extremely high application prospect in the field of containers; the fiber-plastic composite material used by the fiber-plastic profile container bottom plate provided by the invention has more excellent mechanical properties than a single component in the fiber-plastic composite material, so that article loss caused by damage of the container bottom plate can be reduced to a certain extent by using the container bottom plate; the fiber-plastic profile container bottom plate further comprises the hard wear-resistant layer, the hard wear-resistant layer has the advantage of being high in wear resistance, and the risk that the container bottom plate is damaged can be further reduced.

The invention discloses a casting magnetic sheet magnetic powder orientation device and a preparation method of a wave-absorbing magnetic sheet, belongs to the technical field of magnetic materials, and is designed for solving the problems of low magnetic field intensity and the like of an existing orientation device. The casting magnetic sheet magnetic powder orientation device comprises a support made of a non-magnetic conductive material; two pipe sleeves both fixedly arranged on the support and parallel to each other, wherein a gap allowing a casting film to pass through is formed between the two pipe sleeves; and the two permanent magnet modules respectively arranged in the two pipe sleeves in a penetrating manner, wherein a magnetic field is at least formed between the two permanent magnet modules. According to the casting magnetic sheet magnetic powder orientation device and the preparation method of the wave-absorbing magnetic sheet, uniform orientation of the magnetic powder of the casting magnetic sheet in the casting process is improved, the magnetic performance of the flexible magnetic sheet is further improved, meanwhile, the requirement of the casting process for the passing position of a base film is lowered, the magnetic field intensity is large, and the consistency of casting magnetic sheet products is improved.