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Method for preparing graphene single crystal wafer on copper-based textured thin film substrate

A graphene and single crystal technology, which is applied in the field of preparing graphene single crystal wafers on copper-based textured film substrates, can solve problems such as high costs, and achieve the effects of reducing production costs, achieving wide application and consistent orientation.

Active Publication Date: 2020-09-25
SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] The purpose of the present invention is to provide a method for preparing graphene single crystal wafers on a copper-based textured film substrate, thereby solving the problem of high cost caused by epitaxial growth of single crystal graphene wafers on single crystal substrates in the prior art question

Method used

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  • Method for preparing graphene single crystal wafer on copper-based textured thin film substrate
  • Method for preparing graphene single crystal wafer on copper-based textured thin film substrate
  • Method for preparing graphene single crystal wafer on copper-based textured thin film substrate

Examples

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Embodiment 1

[0032] Using the magnetron sputtering method to deposit 800nm ​​copper-based textured film on the surface of sapphire at room temperature, in which copper is the main element, nickel is the auxiliary element, and the content of nickel element is 15%, realizing the copper-based textured film substrate. preparation. Then, the copper-based textured film substrate is placed in a chemical vapor deposition system, and annealed in an argon and hydrogen protective atmosphere, the flow ratio of argon and hydrogen is 300sccm:80sccm, the annealing temperature is 1000°C, and the annealing time After 60 minutes, 10 sccm of methane was introduced, and the growth temperature of the graphene film was 1000°C for 10 minutes, so that a graphene single crystal wafer was epitaxially grown on the surface of the copper-based textured film substrate.

[0033] figure 1 It is the optical microscope topography of graphene on the surface of copper-based textured film. From the figure, it can be seen tha...

Embodiment 2

[0035] The difference between this example and Example 1 is that the content of nickel element in the copper-based textured film substrate prepared in Example 1 is adjusted from 15% to 10%, the flow ratio of argon and hydrogen is 200sccm:50sccm, annealing The temperature is 800° C., the annealing time is 100 minutes, the growth temperature of the graphene film is 300° C., and the rest of the process parameters are the same as in the first embodiment. Such as Figure 7 As shown, by analyzing the Raman spectrum inside the crystal domain, at ~1600cm -1 And ~ 2700cm -1 The characteristic peaks of graphene appear at , and the absence of defect peaks proves that the quality of the grown graphene is high. Such as Figure 8 As shown, the LEED diffraction spot of graphene on the surface of the copper-nickel alloy film in Example 2 shows that the orientation of graphene is consistent, and it is a single crystal film.

Embodiment 3

[0037] The difference between this embodiment and the first embodiment is that the content of the nickel element in the copper-based textured film substrate in the first embodiment is adjusted to 5%, the flow ratio of argon and hydrogen is 100 sccm:20 sccm, and the annealing temperature is 500°C. The annealing time was 120 minutes, the growth temperature of the graphene film was 500° C., and the rest of the process parameters were the same as in the first embodiment. Such as Figure 9 As shown, by analyzing the Raman spectrum inside the crystal domain, at ~1600cm -1 And ~ 2700cm -1 Graphene characteristic peaks appear at , and no defect peaks of graphene are observed, confirming that the quality of the grown graphene is higher; Figure 10 It is the LEED diffraction pattern of the graphene on the surface of the alloy textured film in this embodiment, and the result shows that the orientation of the graphene on the surface of the copper-nickel textured film is consistent, and ...

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Abstract

The invention provides a method for preparing a graphene single crystal wafer on a copper-based textured thin film substrate, comprising the following steps of: S1, providing a copper-based textured thin film substrate, and placing the copper-based textured thin film substrate in a chemical vapor deposition system for annealing treatment; and S2, introducing a gaseous carbon source, and epitaxially growing a graphene single crystal wafer on the surface of the copper-based textured thin film substrate. According to the method for preparing the graphene single crystal wafer on the copper-based textured thin film substrate, the problem of high cost caused by epitaxial growth of the single crystal graphene wafer on the single crystal substrate is solved, large-scale application of the graphenesingle crystal wafer is facilitated, and the method has important significance in wide application of graphene in the field of microelectronics.

Description

technical field [0001] The invention belongs to the field of material preparation, and more specifically relates to a method for preparing a graphene single crystal wafer on a copper-based textured film substrate. Background technique [0002] Graphene has excellent photoelectric properties and shows great application potential in various fields, which has attracted widespread attention from all walks of life. Among the many applications of graphene, the most attractive application is in the field of microelectronics. As a channel material, graphene is an important candidate material to replace the existing silicon material due to its ultra-high carrier mobility and is expected to continue Moore's law. Among them, the batch preparation of graphene single crystal wafers is the prerequisite for its large-scale application in the field of microelectronics in the future. The existing graphene single crystal wafers are mainly prepared by using metal single crystals or germanium...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B25/18C30B29/02C23C14/35C23C14/18
CPCC30B25/186C30B29/02C23C14/35C23C14/185Y02P70/50
Inventor 张学富吴天如王浩敏于庆凯谢晓明
Owner SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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