Preparation method for regular-hexagonal-prism-shaped magnesium-doped zinc oxide film

A zinc oxide thin film and regular hexagonal prism technology, which is applied in the field of semiconductor material preparation, can solve problems such as no research reports, and achieve the effects of uniform morphology distribution, controllable morphology and high purity

Inactive Publication Date: 2016-04-13
XIANGTAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

There are no relevant research reports

Method used

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  • Preparation method for regular-hexagonal-prism-shaped magnesium-doped zinc oxide film
  • Preparation method for regular-hexagonal-prism-shaped magnesium-doped zinc oxide film
  • Preparation method for regular-hexagonal-prism-shaped magnesium-doped zinc oxide film

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Effect test

Embodiment 1

[0040] The preparation steps of a regular hexagonal prism-shaped magnesium-doped zinc oxide film are as follows:

[0041] (1) Prepare a mixed solution of ethylene glycol and ice water with a volume ratio of 1:5 and stir evenly;

[0042] (2) Add zinc acetate again, control its concentration to be 0.15mol / L, stir to make it fully dissolve;

[0043] (3) Add triethanolamine again, control its concentration to be 0.77mol / L, stir to make it fully dissolve;

[0044] (4) Add magnesium acetate again, control its concentration to be 0.15mol / L and stir to make it fully dissolve;

[0045] (5) add ammoniacal liquor again, control its concentration to be 0.28mol / L, stir evenly, obtain uniform reaction solution system;

[0046] (6) The FTO glass was ultrasonically cleaned with acetone, ethanol and distilled water for 30 minutes, and then washed with N 2 blow dry;

[0047] (7) Put the cleaned FTO glass vertically into a polytetrafluoroethylene-lined reactor;

[0048] (8) Transfer the rea...

Embodiment 2

[0059] The preparation steps of a regular hexagonal prism-shaped magnesium-doped zinc oxide film are as follows:

[0060] (1) Prepare a mixed solution of ethylene glycol and ice water with a volume ratio of 1:10 and stir evenly;

[0061] (2) Add zinc acetate again, control its concentration to be 0.077mol / L, stir to make it fully dissolve;

[0062] (3) Add triethanolamine again, control its concentration to be 0.77mol / L, stir to make it fully dissolve;

[0063] (4) Add magnesium acetate again, control its concentration to be 0.23mol / L, stir to make it fully dissolve;

[0064] (5) add ammoniacal liquor again, control its concentration to be 0.28mol / L, stir evenly, obtain uniform reaction solution system;

[0065] (6) The FTO glass was ultrasonically cleaned with acetone, ethanol and distilled water for 10 minutes, and then washed with N 2 blow dry;

[0066] (7) Put the cleaned FTO glass vertically into a polytetrafluoroethylene-lined reactor;

[0067] (8) Transfer the reac...

Embodiment 3

[0071] The preparation steps of a regular hexagonal prism-shaped magnesium-doped zinc oxide film are as follows:

[0072] (1) Prepare a mixed solution of ethylene glycol and ice water with a volume ratio of 1:10 and stir evenly;

[0073] (2) Add zinc acetate again, control its concentration to be 0.23mol / L, stir to make it fully dissolve;

[0074] (3) Add triethanolamine again, control its concentration to be 0.77mol / L, stir to make it fully dissolve;

[0075] (4) Add magnesium acetate again, control its concentration to be 0.077mol / L, stir to make it fully dissolve;

[0076] (5) add ammoniacal liquor again, control its concentration to be 0.28mol / L, stir evenly, obtain uniform reaction solution system;

[0077] (6) The FTO glass was ultrasonically cleaned with acetone, ammonia water and deionized water for 10 minutes respectively, and then washed with N 2 blow dry;

[0078] (7) Put the cleaned FTO glass vertically into a polytetrafluoroethylene-lined reactor;

[0079] (8...

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Abstract

The invention discloses a preparation method for a regular-hexagonal-prism-shaped magnesium-doped zinc oxide film. The microstructure of the magnesium-doped zinc oxide film is in the shape of a regular hexagonal prism, and possesses the advantages that the crystallization degree is high and surface defects are less. The preparation method of the film comprises separately dissolving zinc acetate, magnesium acetate, triethanolamine and ammonia water in a mixture of glycol and ice water, getting proper amount of the solution and a cleaned substrate, transferring into a teflon inner container of a hydrothermal kettle for hydrothermal reaction, after the reaction is finished, performing washing, drying and annealing processing on the substrate, so as to prepare a layer of the regular-hexagonal-prism-shaped magnesium-doped zinc oxide film on the substrate. The preparation method is simple in technology, good in repeatability, low in cost, strong in controllability, low in synthesis temperature, green and friendly to environment. The obtained product is in the shape of a regular hexagonal prism, is good in crystallinity, high in purity, less in surface defects, uniform in morphology distribution and consistent in orientation, and possesses potential application prospect and scientific research value in the fields of photoelectric materials new energy.

Description

technical field [0001] The invention belongs to the technical field of semiconductor material preparation, and relates to a preparation method of photoelectric materials, solar cell window layer materials and sensor materials. In particular, it relates to a preparation method of a regular hexagonal prism-shaped magnesium-doped zinc oxide film. Background technique [0002] Zinc oxide is a multifunctional semiconductor material, which can be widely used in solar cells, piezoelectric sensors, gas sensors, luminescent Diodes, UV detectors, semiconductor lasers, etc. In order to further improve its electrical, optical and magnetic properties, different impurity elements can be doped. Doping magnesium in zinc oxide can adjust the forbidden band width and realize energy band engineering. Theoretically by adjusting the content of magnesium can achieve Zn 1-x Mg x The band gap of O(ZMO) is continuously adjustable between 3.37 and 7.8 eV. When the magnesium content in the ZMO c...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C03C17/23C04B41/50
Inventor 易捷王莽杨穗
Owner XIANGTAN UNIV
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