Polycrystalline silicon ingot, manufacturing method thereof, and crucible
A technology for polycrystalline silicon ingots and crucibles, which is applied in the field of crucibles, polycrystalline silicon ingots and their manufacturing methods, can solve the problems such as the difficulty in improving the conversion efficiency of solar cells, and achieve the effects of consistent crystal grain orientation, uniform distribution, and improved conversion efficiency
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[0031] As mentioned in the background art section, the polycrystalline silicon ingots obtained by the ingot casting process in the prior art are of poor quality, and the conversion efficiency of the solar cells made by using the polycrystalline silicon ingots in the prior art is low. The inventor found that this problem occurs. The reason is that during the crystal growth process of the polycrystalline silicon ingot in the prior art, the crystal nucleates and grows randomly, resulting in a big difference in the size of the grains in the finally formed silicon ingot, and there will be some inclusions between the large grains. Small grains, or defects such as subgrain boundaries are distributed inside the large grains, and the size of the small grains is too small, resulting in many grain boundaries and dislocations inside the silicon ingot, and these defects such as subgrain and dislocation are very easy. The recombination center of photogenerated carriers, especially dislocatio...
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