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Method for preparing CdZnTe epitaxial film on GaAs single crystal substrate

An epitaxial film and substrate technology, applied in the field of preparing CdZnTe epitaxial films, can solve the problems of poor quality of CdZnTe epitaxial films and the like

Inactive Publication Date: 2014-11-19
NORTHWESTERN POLYTECHNICAL UNIV +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] In order to overcome the shortcomings of the poor quality of CdZnTe epitaxial films prepared by existing methods for preparing CdZnTe epitaxial films, the present invention provides a method for preparing CdZnTe epitaxial films on GaAs single crystal substrates

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0014] Embodiment 1: CdZnTe single crystal thin film is grown on GaAs (100) substrate.

[0015] ● Prepare growth source: Cd grown by vertical Bridgman method 0.9 Zn 0.1 Te crystal ingot, the remaining polycrystalline block after cutting off the single crystal is cut into 10×10×2mm 3 Each surface of the wafer is polished on 5000# sandpaper, and the MgO suspension is used for rough polishing, and the silica sol is finely polished, and then it is successively ultrasonically cleaned in acetone, absolute ethanol, and deionized water for 20 min. High purity N 2Blow dry, and dry in a vacuum oven (100° C.) for 10 minutes for later use.

[0016] ●Preparation of GaAs(100) substrate: GaAs wafer is grown by vertical gradient solidification method, cut along [100] crystal direction, polished on both sides, surface treatment is Epi-ready level, wafer thickness is 500±25μm, diameter It is 3 inches. Cut the wafer into a size of 10×11×0.5mm with a diamond cutter 3 GaAs (100) single cryst...

Embodiment 2

[0021] Embodiment 2: Epitaxial ZnTe / CdZnTe film on GaAs (100) substrate.

[0022] ●Preparation of ZnTe growth source: ZnTe crystal ingot grown by vertical Bridgman method, and the remaining polycrystalline block after cutting off the single crystal is cut into 10×10×2mm 3 The wafers were polished on the 5000# sandpaper, each surface of the wafer was polished, and the MgO suspension was used for rough polishing, and the silica sol was finely polished, and then it was successively ultrasonically cleaned in acetone, absolute ethanol, and deionized water for 20 min, and then washed with High purity N 2 Blow dry, and dry in a vacuum oven (100° C.) for 10 minutes for later use.

[0023] ●Preparation of GaAs(100) substrate: GaAs wafer is grown by vertical gradient solidification method, cut along [100] crystal direction, polished on both sides, surface treatment is Epi-ready level, wafer thickness is 500±25μm, diameter It is 3 inches. Cut the wafer into a size of 10×11×0.5mm with ...

Embodiment 3

[0034] Embodiment 3: Epitaxial CdZnTe laminated film on GaAs (100) substrate.

[0035] ●Step 1. Prepare growth source: Cd grown by vertical Bridgman method 0.9 Zn 0.1 Te crystal ingot, the remaining polycrystalline block after cutting off the single crystal is cut into 10×10×2mm 3 The wafers were polished on the 5000# sandpaper, each surface of the wafer was polished, and the MgO suspension was used for rough polishing, and the silica sol was finely polished, and then it was successively ultrasonically cleaned in acetone, absolute ethanol, and deionized water for 20 min, and then washed with High purity N 2 Blow dry, and dry in a vacuum oven (100° C.) for 10 minutes for later use.

[0036] Step 2. Prepare GaAs(100) substrate: GaAs wafers are grown by vertical gradient solidification method, cut along the [100] crystal direction, polished on both sides, the surface treatment is Epi-ready level, and the wafer thickness is 500± 25μm, 3inch in diameter. Cut the wafer into a s...

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Abstract

The present invention discloses a method for preparing a CdZnTe epitaxial film on a GaAs single crystal substrate. A purpose of the present invention is to solve the technical problem of poor quality of the CdZnTe epitaxial film prepared through the CdZnTe epitaxial film preparation method. The technical scheme comprises: before growing, carrying out chemical etching and pre-heating treatment on the GaAs substrate, placing the prepared CdZnTe growth source and the GaAs substrate into a growing chamber, adjusting the distance between the source and the substrate, pumping vacuum, introducing Ar to achieve the target pressure, turning on a heating system to heat, and stopping the heating after completing deposition. According to the present invention, the continuous mass transfer from the source to the substrate is inhibited by introducing the baffle during the cooling process after the growing ends so as to improve the density of the film and reduce the roughness, the thicker CdZnTe film grows by adopting the laminated growing manner, and the lattice mismatch is reduced by depositing ZnTe on the GaAs as the buffer layer so as to improve the quality of the epitaxial film.

Description

technical field [0001] The invention relates to a method for preparing a CdZnTe epitaxial film, in particular to a method for preparing a CdZnTe epitaxial film on a GaAs single crystal substrate. Background technique [0002] CdZnTe material has the advantages of high average atomic number, large band gap, high resistivity, low leakage current and noise, and high intrinsic μ τ value. It is an ideal material for preparing room temperature nuclear radiation detectors and is widely used in astrophysics, Environmental monitoring, nuclear safety and medical imaging and other fields. The ever-increasing scale of pixel detectors puts higher requirements on the size of CdZnTe crystals. However, large-sized CdZnTe single crystals have problems such as many structural defects, uneven composition, difficult preparation, and high cost. In contrast, CdZnTe thin films are less consumable, cost-effective and easy to prepare in large areas, so their application in large-area radiation dete...

Claims

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Application Information

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IPC IPC(8): C30B29/46C30B23/02C30B23/06
Inventor 查钢强蔺云高俊宁汤三奇张昊李嘉伟介万奇
Owner NORTHWESTERN POLYTECHNICAL UNIV
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