Quick-melting and slow crystal growth high-efficiency polycrystalline silicon ingot casting process
A technology of polysilicon and crystal growth, which is applied in the direction of polycrystalline material growth, crystal growth, single crystal growth, etc. It can solve the problems of high cost of solar power generation, failure to meet the requirements of solar power generation, and low photoelectric conversion efficiency of polycrystalline silicon solar cells. , achieve the effect of shortening time and improving quality
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Embodiment 1
[0020] Follow the steps below to perform the polysilicon ingot casting process:
[0021] (1) Loading, vacuuming and preheating: put polysilicon material with a purity of 5N into the quartz crucible in the ingot furnace, then vacuumize to 0.8Pa, start preheating, and the temperature in the quartz crucible reaches 1050°C within 2 hours .
[0022] (2) Melting and heat preservation: Introduce argon gas into the ingot furnace as a protective gas to keep the pressure in the furnace at 45KPa, then heat up to make the temperature in the quartz crucible reach 1545°C within 4 hours and keep it warm for 7 hours, then after 0.5 hours Cool down to 1440°C;
[0023] (3) Crystal growth: The temperature in the quartz crucible is reduced from 1440°C to 1420°C after 29 hours to complete the central crystal growth stage of the polysilicon ingot, and then the temperature is lowered to 1410°C after 3 hours to complete the corner crystal growth stage of the polysilicon ingot.
[0024] (4) Annealin...
Embodiment 2
[0029] Follow the steps below to perform the polysilicon ingot casting process:
[0030] (1) Loading, vacuuming and preheating: put the polysilicon material with a purity of 6N into the quartz crucible in the ingot furnace, then evacuate to 1Pa, start preheating, and the temperature in the quartz crucible reaches 1150°C within 3 hours.
[0031] (2) Melting and heat preservation: Introduce argon gas into the ingot furnace as a protective gas to keep the pressure in the furnace at 60KPa, and then heat up to make the temperature in the quartz crucible reach 1560°C within 5 hours and keep it warm for 8 hours, then after 0.5 hours Cool down to 1440°C;
[0032] (3) Crystal growth: The temperature in the quartz crucible is reduced from 1440°C to 1420°C after 29 hours to complete the central crystal growth stage of the polysilicon ingot, and then the temperature is lowered to 1410°C after 3 hours to complete the corner crystal growth stage of the polysilicon ingot.
[0033] (4) Annea...
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