Quick-melting and slow crystal growth high-efficiency polycrystalline silicon ingot casting process

A technology of polysilicon and crystal growth, which is applied in the direction of polycrystalline material growth, crystal growth, single crystal growth, etc. It can solve the problems of high cost of solar power generation, failure to meet the requirements of solar power generation, and low photoelectric conversion efficiency of polycrystalline silicon solar cells. , achieve the effect of shortening time and improving quality

Inactive Publication Date: 2013-12-11
青岛隆盛晶硅科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] At present, the photoelectric conversion efficiency of polycrystalline silicon solar cells is not very high. The photoelectric conversion efficiency of polycrystalline silicon solar cells obtained by the existing technology is 17.1%, which makes the cost of solar power generation still high and cannot meet people's requirements for solar power generation.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0020] Follow the steps below to perform the polysilicon ingot casting process:

[0021] (1) Loading, vacuuming and preheating: put polysilicon material with a purity of 5N into the quartz crucible in the ingot furnace, then vacuumize to 0.8Pa, start preheating, and the temperature in the quartz crucible reaches 1050°C within 2 hours .

[0022] (2) Melting and heat preservation: Introduce argon gas into the ingot furnace as a protective gas to keep the pressure in the furnace at 45KPa, then heat up to make the temperature in the quartz crucible reach 1545°C within 4 hours and keep it warm for 7 hours, then after 0.5 hours Cool down to 1440°C;

[0023] (3) Crystal growth: The temperature in the quartz crucible is reduced from 1440°C to 1420°C after 29 hours to complete the central crystal growth stage of the polysilicon ingot, and then the temperature is lowered to 1410°C after 3 hours to complete the corner crystal growth stage of the polysilicon ingot.

[0024] (4) Annealin...

Embodiment 2

[0029] Follow the steps below to perform the polysilicon ingot casting process:

[0030] (1) Loading, vacuuming and preheating: put the polysilicon material with a purity of 6N into the quartz crucible in the ingot furnace, then evacuate to 1Pa, start preheating, and the temperature in the quartz crucible reaches 1150°C within 3 hours.

[0031] (2) Melting and heat preservation: Introduce argon gas into the ingot furnace as a protective gas to keep the pressure in the furnace at 60KPa, and then heat up to make the temperature in the quartz crucible reach 1560°C within 5 hours and keep it warm for 8 hours, then after 0.5 hours Cool down to 1440°C;

[0032] (3) Crystal growth: The temperature in the quartz crucible is reduced from 1440°C to 1420°C after 29 hours to complete the central crystal growth stage of the polysilicon ingot, and then the temperature is lowered to 1410°C after 3 hours to complete the corner crystal growth stage of the polysilicon ingot.

[0033] (4) Annea...

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Abstract

The invention belongs to the field of polycrystalline silicon cast ingots and particularly relates to a quick-melting and slow crystal growth high-efficiency polycrystalline silicon ingot casting process. The quick-melting and slow crystal growth high-efficiency polycrystalline silicon ingot casting process comprises the steps of loading, vacuumizing and preheating, melting and preserving heat, growing the crystal, annealing, cooling and blocking, wherein the melting and heat preserving phase and the crystal growing phase are carried out according to the following steps: introducing argon gas into an ingot casting furnace to be used as shielding gas; then heating and raising temperature to enable the temperature of a quartz crucible to reach 1545-1560 DEG C within 4-5 hours, and preserving heat for 7-8 hours; reducing the temperature to 1440 DEG C after 0.5 hour; reducing the temperature of the quartz crucible from 1440 DEG C to 1420 DEG C through 29 hours and finishing the central crystal growing phase of the polycrystalline silicon cast ingot; reducing the temperature to 1410 DEG C after 3 hours to finish the corner crystal growing phase of the polycrystalline silicon cast ingot. The quick-melting and slow crystal growth high-efficiency polycrystalline silicon ingot casting process disclosed by the invention has the advantages that firstly, the photoelectric conversion efficiency of a solar cell can be improved from 17.1 percent to 17.4 percent; secondly, the time of the whole process is shortened while the quality of the polycrystalline silicon cast ingot is improved.

Description

technical field [0001] The invention belongs to the field of polysilicon ingot casting, and in particular relates to a process of fast-melting slow crystal growth and high-efficiency polysilicon ingot casting. Background technique [0002] At present, my country has become the world's largest energy production and consumption country, but the per capita energy consumption level is still very low. With the continuous development of the economy and society, my country's energy demand will continue to grow. In response to the current energy shortage, countries around the world are thinking deeply, and are working hard to improve energy efficiency, promote the development and application of renewable energy, and reduce the impact on energy consumption. Reliance on imported oil to enhance energy security. [0003] As one of the important development directions of renewable energy, solar photovoltaic power generation has developed rapidly in recent years, and its proportion is inc...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B28/06C30B29/06
Inventor 谭毅熊华江王峰李鹏廷刘燕黄佳琪刘东雷安广野
Owner 青岛隆盛晶硅科技有限公司
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