The invention describes an integrated-
photonics arrangement, implementable in a multi-guide vertical integration structure composed from III-V semiconductors and grown in one epitaxial growth run, that allows for vertical and lateral splitting of optical signals co- or bi-directionally propagating in the common passive
waveguide into plurality of the vertically integrated passive or active
wavelength-designated waveguides, therefore, enabling the
wavelength-designated waveguides operating in different wavelengths to be monolithically integrated onto the same substrate and connected to the shared passive
waveguide. In the exemplary embodiments of the invention, two active
wavelength-designated waveguides, each of which either
laser or
photodetector, are vertically integrated with a common passive
waveguide connected to the input / output optical port shared by both operating wavelengths, to form a single-
fiber, two-wavelength
receiver (both wavelength-designated waveguides are waveguide photodetectors) or
transmitter (both wavelength-designated waveguides are edge-emitting
semiconductor injection lasers) or
transceiver (one wavelength-designated waveguide is
waveguide photodetector and the other—edge-emitting
semiconductor injection
laser). Advantageously to the previous art, the proposed vertical splitting and lateral routing allows for a reduced
footprint size while greatly improving design flexibility and / or device performance.