Method for forming semiconductor laser and spot-size converter by once epitaxy
A mode spot converter and laser technology, applied in semiconductor lasers, lasers, laser parts, etc., can solve the problems of poor repeatability of device fabrication, deterioration of mode characteristics, difficult interface processing, etc., and achieve large differential gain and reduced device cost. , the effect of low cost
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[0062] Please refer to Fig. 1, the present invention relates to a novel LD-SSC manufacturing method, comprising the following manufacturing steps:
[0063] (1) The 2-inch n-InP substrate undergoes strict decontamination (heating and boiling with ethanol, trichlorethylene, acetone, and ethanol in sequence) → pickling (soaking in concentrated sulfuric acid for 1 to 2 minutes) → water washing (rinsing with deionized water More than 50 times) → after drying treatment, put it into the growth chamber, the growth temperature is 655°C, the growth pressure is 22mbar, and the graphite boat speed is 75-80 rpm.
[0064] (2) On the n-type indium phosphide substrate (100) epitaxially grow n-type indium phosphide buffer layer (0.5 μm thick), lower waveguide layer (thickness 50nm, bandgap wavelength is 1.1 or 1.2 μm), 2.4 μm Indium phosphide space layer, lower optical confinement layer (thickness 80nm, bandgap wavelength 1.1 or 1.2μm), compressive strain quantum well active region, upper opti...
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