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A preparation method of low surface concentration shallow diffusion junction solar cell

A shallow diffusion junction, solar cell technology, applied in the field of solar energy, can solve the problems of poor uniformity, inability to achieve industrialization, uneven square resistance, etc., and achieve the effects of low cost, improved photoelectric conversion efficiency, and improved minority carrier life.

Active Publication Date: 2016-01-27
CSI CELLS CO LTD
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AI Technical Summary

Problems solved by technology

For the silicon nitride layer, the final cell has tiny cracks, poor uniformity, uneven square resistance, and cannot be industrialized

Method used

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  • A preparation method of low surface concentration shallow diffusion junction solar cell

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Embodiment 1

[0026] A method for preparing a low surface concentration shallow diffusion junction solar cell includes the following steps:

[0027] (1) After making the P-type monocrystalline silicon wafer, deposit 20nm thick microcrystalline silicon as a barrier layer on the light-receiving surface of the battery by PECVD;

[0028] (2) Put the deposited silicon wafers into a diffusion furnace for regular diffusion, and the square resistance after diffusion is 60Ω / □;

[0029] (3) Put the diffused silicon wafer into a 0.2% sodium hydroxide solution for cleaning, and the cleaning time is 1 min. The microcrystalline silicon layer is removed and the square resistance after cleaning is 75Ω / □;

[0030] (4) After removing the back electrode or cutting edge of the silicon wafer, put it in 3~5vol% HF for 200s;

[0031] (5) Depositing anti-reflection film, back electrode back field, and printing and sintering test packaging of positive electrode; low surface concentration and shallow diffusion junction solar ...

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Abstract

The invention discloses a manufacturing method for a low-surface concentration shallow diffused junction solar battery. The manufacturing method comprises the following steps of: firstly, depositing a barrier layer on a light-sensitive surface of a flocked silicon chip, wherein the barrier layer is a microcrystal silicon layer; secondly, feeding the deposited silicon chip into a diffusion furnace for diffusing; thirdly, removing the barrier layer by cleaning; and fourthly, producing a back electrode back field and a printing positive electrode and sintering to obtain the low-surface concentration shallow diffused junction solar battery. According to the manufacturing method disclosed by the invention, the manufacture of the low-surface concentration shallow diffused junction solar battery is realized by using traditional equipment and conditions, so that the diffusion length of a minority carrier is increased, the service life of the minority carrier is prolonged and the photoelectric conversion efficiency of a battery piece is finally increased.

Description

Technical field [0001] The invention relates to a preparation method of a low surface concentration shallow diffusion junction solar cell, belonging to the technical field of solar energy. Background technique [0002] Solar cells, also called photovoltaic cells, are semiconductor devices that directly convert the light energy of the sun into electrical energy. Because it is a green and environmentally friendly product, it will not cause environmental pollution, and it is a renewable resource, so in today's energy shortage situation, solar cells are a new type of energy with broad development prospects. [0003] At present, due to existing conditions and costs, the conversion efficiency of conventional solar cells is difficult to break through the stable efficiency of 18.8%. With the continuous advancement of technology, the corresponding input costs are also rising. Therefore, it is very important to improve the photoelectric conversion efficiency under the existing equipment co...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/18
CPCY02P70/50
Inventor 张为国王栩生章灵军
Owner CSI CELLS CO LTD
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