Strained multiple quantum well laser based on gesn/sigesn material and its fabrication method
A strained multi-quantum well and laser technology, applied in the field of optoelectronics, can solve the problems of increasing the carrier concentration, weakening the optical gain of the laser, increasing the threshold of the laser, etc. Effect
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
Embodiment
[0043] Example: Ge 0.9 sn 0.1 / Ge 0.695 Si 0.161 sn 0.144 Fabrication method of strained multiple quantum well laser.
[0044] Step 1: Prepare a Ge pseudosubstrate.
[0045] Using the solid-source molecular beam epitaxy process, on the undoped (100) Si substrate (1), the GeH 4 As a Ge source, after growing a 30nm thick Ge buffer layer in an environment of 350°C, the temperature was quickly raised to 600°C and epitaxially grown several hundred nanometers of Ge film as a pseudo-substrate such as figure 2 (a);
[0046] Step 2: Phosphorus ion implantation.
[0047] At an energy of 50KeV and an implant dose of 10 15 cm -2 , The implanted ions are P(31) under the condition that the substrate is tilted at an angle of 7° + Phosphorus ion implantation process to form Ge N + Type pseudosubstrate (2);
[0048] Step 3: Prepare a GeSn buffer layer.
[0049] Using low-temperature solid-source molecular beam epitaxy, the Ge N + Intrinsic Ge with a thickness of 100nm was epitax...
PUM
Abstract
Description
Claims
Application Information
- R&D Engineer
- R&D Manager
- IP Professional
- Industry Leading Data Capabilities
- Powerful AI technology
- Patent DNA Extraction
Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.
© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com