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A method for preparing passivation contact structure based on lpcvd secondary ion implantation

A technology of contact structure and secondary ions, which is applied in the field of solar cells, can solve the problems of augmentation and multiplication of Auger recombination, and achieve the effects of increasing fill factor, increasing electrical conductivity, and reducing contact resistance

Active Publication Date: 2022-06-28
江苏杰太光电技术有限公司
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Problems solved by technology

Normally, increasing the ion implantation dose can increase the surface ion concentration, reduce the square resistance and improve the conductivity, but the inevitable diffusion of ions through the tunnel oxide layer will also increase accordingly, resulting in an increase in Auger recombination (Baidu Encyclopedia: Auger recombination refers to the recombination process corresponding to Auger transition

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  • A method for preparing passivation contact structure based on lpcvd secondary ion implantation
  • A method for preparing passivation contact structure based on lpcvd secondary ion implantation
  • A method for preparing passivation contact structure based on lpcvd secondary ion implantation

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preparation example Construction

[0044] A method for preparing a solar cell with an N-type passivation contact structure of the present embodiment includes the following steps:

[0045] (1) Select N-type silicon substrate 5 with a thickness of 150~170μm, a resistivity of 0.3~2Ω∙cm, and a size of 156.75mm × 156.75mm as the substrate for double-sided texturing. The battery structure after this step is as follows figure 1 shown;

[0046] (2) Using boron tribromide as a boron source on the N-type silicon surface after the texturing treatment in step (1) to prepare a double-sided p+ doped region 4; wherein, the diffusion temperature is 850~1000°C, and the time is 50~ 80min, the square resistance is 80~100Ω / sqr, the battery structure after completing this step is as follows figure 2 shown;

[0047] (3) Select one side of the N-type silicon that has been diffused with boron on both sides in step (2), and put HF and HNO on one side. 3 , and H 2 SO 4 Etching is performed in the mixed solution to remove the p+ do...

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Abstract

A method for preparing a passivation contact structure based on LPCVD secondary ion implantation provided by the present invention can well solve the problem encountered in preparing a heavily doped polysilicon layer by tubular LPCVD ion implantation, that is, while increasing the surface ion concentration The problem of increasing the number of ions that inevitably diffuse through the tunnel oxide layer can increase the surface ion concentration of polysilicon, increase the electrical conductivity, reduce the contact resistance, and thereby improve the battery fill factor; reduce the diffusion through the tunnel oxide layer. ions, reducing Auger recombination, improving the passivation effect of the structure, increasing the open circuit voltage and short circuit current; the process is mature and can be completed by using the existing equipment for secondary processing.

Description

technical field [0001] The invention relates to the technical field of solar cells, in particular to a method for preparing a passivation contact structure based on LPCVD secondary ion implantation in an N-type TOPCon solar cell. Background technique [0002] In the field of solar cell technology, the main factor affecting the improvement of cell efficiency is electron-hole pair recombination. In the entire battery structure, due to the disordered arrangement of silicon atoms, there are a large number of dangling bonds on the surface of the silicon wafer. The dangling bonds can easily capture electrons and increase the recombination of the battery surface. Metal-semiconductor contact regions are also more prone to recombination. In order to improve the efficiency of solar cells and reduce the recombination between the surface and the gold semi-contact area, a thin layer of dielectric or semiconductor material is usually deposited on the surface of the device, that is, surfa...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C16/02C23C16/44C30B25/00C30B31/22C30B33/02C30B29/06H01L31/18
CPCC23C16/0227C23C16/0272C23C16/44C30B25/00C30B31/22C30B33/02C30B29/06H01L31/1868H01L31/1804Y02P70/50
Inventor 林建伟陈嘉崔义乾乔振聪
Owner 江苏杰太光电技术有限公司
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