A kind of super junction power device and manufacturing method

A technology of power devices and main junctions, which is applied in the field of super junction power devices and manufacturing, and can solve the problems of lower breakdown voltage, lower ion concentration, and lower surface breakdown voltage of super junction power devices

Active Publication Date: 2019-08-30
FOUNDER MICROELECTRONICS INT
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The technical problem to be solved by the present invention is that in the manufacturing process of the super junction power device in the prior art, the ion concentration on the surface of the P column area is reduced after the thermal process, thereby reducing the surface breakdown voltage of the super junction power device, and is easily oxidized by the surface of the super junction power device The influence of the interfacial charge of the layer, resulting in a decrease in the breakdown voltage

Method used

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  • A kind of super junction power device and manufacturing method
  • A kind of super junction power device and manufacturing method
  • A kind of super junction power device and manufacturing method

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Embodiment 1

[0029] A super junction power device involved in this embodiment includes an active region, a voltage dividing region, a stop ring region and a scribe lane region, the voltage dividing region is arranged on the periphery of the active region, and the stop ring region is arranged On the periphery of the active region, the scribe lane region is disposed on the periphery of the stop ring region. The super junction power device will be described in detail below.

[0030] Such as figure 2 As shown, the voltage dividing region of the super junction power device provided by the present invention includes a plurality of P pillars, and the density of P pillars on the side near the active region in the voltage dividing region is greater than that on the side near the stop ring region. The P column density; the P column density refers to the number of the P column in the unit area of ​​the partial pressure region.

[0031] The super junction power device of the present invention adopts...

Embodiment 2

[0043] The present invention also provides a method for a super junction power device, which includes the following steps:

[0044] Step 1, as shown in FIG. 3( a ), a plurality of P pillars are formed in the voltage division area on the surface of the silicon wafer. The distance between the P columns on the side near the active region in the voltage dividing region is the same, and the distance between the P pillars on the side close to the cutoff region gradually increases from the active region to the cutoff region;

[0045] In this embodiment, each of the P columns has the same ion concentration and the same width. In this embodiment, using P columns with different distances in the voltage division region will reduce the surface electric field strength of the power device, thereby increasing the breakdown voltage;

[0046] Step 2, as shown in FIG. 3(b), a shallow P-type implanted junction is implanted on the side close to the active region in the voltage dividing region, a...

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Abstract

The invention relates to a super junction power device and a manufacturing method thereof. The super junction power device comprises an active region, a voltage-dividing region, a cutoff ring region and a scribing line region, wherein the voltage-dividing region is arranged on the periphery of the active region, the cutoff ring region is arranged on the periphery of the active region, the scribing line region is arranged on the periphery of the cutoff ring region, the voltage-dividing region comprises a plurality of P posts, and the density of the P posts at one side, close to the active region, of the voltage-dividing region is greater than that of the P posts at one side close to the cutoff ring region. The super junction power device terminal adopts the P posts with different distances in the voltage-dividing region, so that the intensity of a surface electrical field of the super junction power device is reduced, the breakdown voltage is increased, the influence of the an electrical field accumulated at the surface of an oxidation layer on the voltage-dividing region is eliminated, the area of the voltage-dividing region is reduced, the device performance is improved, and the device manufacturing cost is reduced.

Description

technical field [0001] The invention relates to a power device, in particular to a super junction power device and a manufacturing method. Background technique [0002] Vertical Double Diffused Field Effect Transistor (VDMOS for short) is a new power semiconductor device with rapid development and wide application. It introduces a super junction (Super junction) structure on the basis of ordinary vertical double-diffused metal oxide semiconductors, so that it has VDMOS high input impedance, fast switching speed, high operating frequency, voltage control, good thermal stability, and simple drive circuit. advantage. Its two poles are on both sides of the device, so that the current flows vertically inside the device, increasing the current density, improving the rated current, and the on-resistance per unit area is also small. It is a very versatile power device. [0003] Field limiting ring technology is one of the most commonly used voltage divider structures in power devi...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/78H01L29/06H01L21/336
Inventor 李理马万里赵圣哲
Owner FOUNDER MICROELECTRONICS INT
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