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Quantum dot light-emitting device and preparation method thereof

A quantum dot luminescence and device technology, applied in the field of quantum dot luminescence, can solve the problems of high luminous efficiency and QLED cannot be realized, and achieve the effects of improving luminous efficiency, reducing defect states, and suppressing fluorescence quenching

Active Publication Date: 2020-03-24
ZHEJIANG UNIV +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] The main purpose of the present invention is to provide a quantum dot light-emitting device and its preparation method to solve the problem that QLED still cannot achieve high luminous efficiency in the prior art

Method used

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  • Quantum dot light-emitting device and preparation method thereof
  • Quantum dot light-emitting device and preparation method thereof
  • Quantum dot light-emitting device and preparation method thereof

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preparation example Construction

[0038] On the basis of the research results, the applicant proposed the technical solution of the present application. In a typical implementation of the present application, a method for preparing a quantum dot light-emitting device is provided. The preparation method includes: providing a workpiece containing a nanocrystal layer of a quantum dot light-emitting device; The workpiece to be processed of the first layer is acid-treated to obtain a quantum dot light-emitting device.

[0039] The preparation method of the quantum dot light-emitting device of the present application, by carrying out acid treatment to the workpiece to be processed containing the nanocrystal layer, on the one hand the acid and the hydroxide ion ligand on the surface of the nanocrystal (the current nanocrystal is due to the reason of the synthesis process, Its surface usually has hydroxide ion ligands) to react to generate water and acid ion ligands, reducing or eliminating the hydroxide ion ligands o...

Embodiment 11

[0089] S1. Prepare ITO glass

[0090] Put the ITO glass piece with the number engraved on the back into a glass dish filled with ethanol solution, and wipe the ITO surface clean with a cotton swab. Sonicate with acetone, deionized water, and ethanol in turn for 10 minutes, and blow dry with a nitrogen gun. Finally, place the cleaned ITO glass in oxygen plasma for 10 minutes.

[0091] S2. Preparation of Hole Injection Layer (HIL)

[0092] The cleaned ITO glass sheet is spin-coated with 30mg / ml NiO nanocrystal solution of octane phase in air respectively, the rotating speed is 3000r / min, and the spin-coating time is 45 seconds. After processing at 120°C for 20 minutes and annealing at 150°C for 30 minutes, quickly transfer the sheet to a nitrogen atmosphere glove box. S3. Preparation of hole transport layer (HTL)

[0093] TFB (8-10mg / mL, chlorobenzene solution) Continue to spin-coat the glass / ITO / NiO nanocrystal sheet with the hole transport layer of TFB, the rotation speed is...

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Abstract

The invention provides a quantum dot light-emitting device and a preparation method thereof. The preparation method comprises the following steps: providing a to-be-processed part containing a nanocrystalline layer of the quantum dot light-emitting device; and carrying out acid treatment on the to-be-processed workpiece containing the nanocrystalline layer by adopting organic acid to obtain the quantum dot light-emitting device. By carrying out the acid treatment on a to-be-processed workpiece containing a nanocrystalline layer, on one hand, acid reacts with hydroxyl ion ligands on the surfaceof the nanocrystal (the surface of the nanocrystal usually carries the hydroxyl ion ligands due to a synthesis process at present) to form acid radical ion ligands and generate water, so that the hydroxyl ion ligands on the surface of the nanocrystal are greatly reduced or eliminated; on the other hand, the acid can be directly used as a surface ligand of the oxide nanocrystal, a large number ofdangling bonds on the surface of the nanocrystal are reduced or even eliminated, and therefore the defect mode of the surface of the nanocrystal is reduced. Therefore, quantum dot fluorescence quenching caused by quenching interaction between the oxide nanocrystalline and the quantum dot can be effectively inhibited, and the luminous efficiency of the device is further improved.

Description

technical field [0001] The invention relates to the field of quantum dot luminescence, in particular to a quantum dot luminescence device and a preparation method thereof. Background technique [0002] Quantum dots are semiconductor nanocrystals with a size between 1-100nm and a "quantum confinement effect". Because quantum dots have a series of unique and excellent optical properties such as wide absorption spectrum, narrow emission fluorescence spectrum, and high luminescence quantum yield, they have broad application prospects in light-emitting diodes, solar cells, and bioluminescent labels. Especially in flat panel display applications, quantum dot electroluminescent diodes (Quantum dot light-emitting diodes, QLEDs) based on quantum dot materials have been used in display image quality, device performance, and manufacturing by virtue of the characteristics and optimization of quantum dot nanomaterials. Cost and other aspects have shown great potential. Although the per...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/50H01L51/56H01L51/54
CPCH10K50/115H10K50/16H10K50/17H10K2102/00H10K71/00
Inventor 金一政张振星
Owner ZHEJIANG UNIV
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