Method for improving radiation resistance capability of VDMOS device
An anti-irradiation and device technology, applied in semiconductor devices, semiconductor/solid-state device manufacturing, electrical components, etc., can solve problems such as difficulty in meeting process requirements, reduce density, reduce defect density, and inhibit the generation of interface states. Effect
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[0030] The preparation process of the three-layer structure grid in this embodiment is as follows:
[0031] (1) Use HF solution (water: HF=50:1) to clean the surface of the silicon wafer for 120 seconds to remove the oxide layer on the surface of the silicon wafer;
[0032] (2) After the silicon wafer is cleaned, rinsed and dried, a 4nm N 2 O Nitrided Gate Oxide. Compared with the conventional oxide gate dielectric, the nitrided gate dielectric can effectively improve the breakdown characteristics, suppress the hot carrier effect and improve the resistance to FN stress damage. At the same time, since nitriding promotes Si-N bonds to replace Si-O bonds, the formation of interface states is suppressed, which may improve the radiation resistance;
[0033] (3) The N prepared in step (2) at 800°C by hydrogen-oxygen synthesis oxidation method 2 An 8nm hydrogen-oxygen synthesis gate oxide layer was prepared on the O nitride gate oxide layer. due to H 2 -O 2 The temperature of syn...
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