Semiconductor device and method of forming the same

Abstract

A semiconductor device and a method for forming the same, wherein the method includes: providing a substrate with several fins on the substrate; forming an initial doping region and a dielectric layer, the initial doping regions are respectively located in the several fins, and initially The doped region includes a bottom region and a top region located on the bottom region, the dielectric layer covers the fin, the initial doped region and the substrate; a trench penetrating through the dielectric layer is formed in the dielectric layer, and the initially doped region is located in the trench bottom, and the trench exposes the top region; etching removes the top region at the bottom of the trench, so that the bottom region forms a doped region. The method improves the shape consistency of the top surface of the doped region in different fins at the bottom of the groove, and improves the reliability of the semiconductor device.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a semiconductor device and a forming method thereof. Background technique [0002] MOS transistors are one of the most important components in modern integrated circuits. The basic structure of a MOS transistor includes: a semiconductor substrate; a gate structure located on the surface of the semiconductor substrate, a source region located in the semiconductor substrate on one side of the gate structure, and a drain region located in the semiconductor substrate on the other side of the gate structure. The working principle of the MOS transistor is: by applying a voltage to the gate structure, the current through the channel at the bottom of the gate structure is adjusted to generate a switching signal. [0003] With the development of semiconductor technology, the ability of the traditional planar MOS transistor to control the channel current becomes weaker, resultin...

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Problems solved by technology

[0004] However, the performance of semiconductor devices composed of existing fin field effect transistors needs to be improved

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