Preparation method of core-shell structure nanocrystal

A technology of core-shell structure and nanocrystals, which is applied in nanotechnology, nano-optics, nanotechnology, etc., can solve the problems of poor photothermal stability of core-shell structure nanocrystals, lattice defects on the surface of the shell, and low fluorescence intensity. Achieve the effects of improving current efficiency and device life, avoiding large lattice stress, and increasing fluorescence intensity

Inactive Publication Date: 2020-04-17
TCL CORPORATION
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Problems solved by technology

[0004] The purpose of the present invention is to provide a method for preparing nanocrystals with a core-shell structure, aiming at solving the problem of simply using the shell source precursor for continuous injection growth in the existing method for preparing nanocrystals with a core-shell structure, resulting in nano

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preparation example Construction

[0014] The embodiment of the present invention provides a method for preparing nanocrystals with a core-shell structure, comprising the following steps:

[0015] S01. Provide quantum dot core;

[0016] S02. Carry out N times of shell growth on the surface of the quantum dot core, prepare N-layer shells, and obtain nanocrystals with a core-shell structure, and the shell source used for the growth of the shell includes a shell source cation precursor and a shell source anion precursor , the shell source cation precursor is a metal organic carboxylate; between M times of adjacent shell growth steps in different orders, an organic amine is added to the shell growth reaction system that has formed the previous shell for mixing and After heating, the growth of the next shell is carried out; wherein, N is a positive integer greater than or equal to 2; M is a positive integer, and the value of M satisfies: N / 3≤M≤N-1;

[0017] S03. Dispersing the nanocrystals with core-shell structure...

Embodiment 1

[0079] A method for preparing core-shell structure nanocrystals in two steps, comprising the following steps:

[0080] 1. Preparation of cadmium selenide (CdSe) quantum dot core

[0081] 11) Preparation of cadmium precursor: Take 0.25mmol of CdO, 0.5mmol of octadecylphosphonic acid, and 3g of trioctylphosphine oxide and add them together into a 50ml three-necked flask, heat to 380°C and dissolve to make it clear and transparent solution and maintained at this temperature.

[0082] 12) Preparation of Se precursor: Take 0.5 mmol of Se source solution in 1 ml of trioctylphosphine and stir at room temperature until clear.

[0083] 13) Preparation of CdSe quantum dots: Inject 1ml of trioctylphosphine solution into 11), and when the temperature of the solution returns to 380°C, inject the Se precursor in 12) to react for 30s, and then inject 10ml of octadecene to quench the reaction Wash after cooling to room temperature.

[0084] 14) Cleaning and purification of CdSe quantum dot...

Embodiment 2

[0095] A method for preparing core-shell structure nanocrystals in two steps, comprising the following steps:

[0096] 1. Preparation of cadmium selenide (CdSe) quantum dot core

[0097] 11) Preparation of cadmium precursor: Take 0.25mmol of CdO, 0.5mmol of octadecylphosphonic acid, and 3g of trioctylphosphine oxide and add them together into a 50ml three-necked flask, heat to 380°C and dissolve to make it clear and transparent solution and maintained at this temperature.

[0098] 12) Preparation of Se precursor: Take 0.5 mmol of Se source solution in 1 ml of trioctylphosphine and stir at room temperature until clear.

[0099] 13) Preparation of CdSe quantum dots: Inject 1ml of trioctylphosphine solution into 11), and when the temperature of the solution returns to 380°C, inject the Se precursor in 12) to react for 30s, and then inject 10ml of octadecene to quench the reaction Wash after cooling to room temperature.

[0100] 14) Cleaning and purification of CdSe quantum dot...

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Abstract

The invention provides a preparation method of nanocrystal with a core-shell structure. The preparation method comprises the following steps: providing a solution containing a quantum dot core; carrying out shell layer growth on the surface of the quantum dot core N times to prepare N layers of shell layers so as to obtain a core-shell structure nanocrystal, wherein a shell source for shell growthcomprises a shell source cationic precursor and a shell source anionic precursor, the shell source cationic precursor is a metal organic carboxylate, and between the M adjacent shell layer growth steps in different sequences, the shell layer growth reaction system with the formed previous shell layer is added with an organic amine and subjected to mixing heating, and then the next shell layer grows, wherein N is a positive integer of greater than or equal to 2, M is a positive integer, and M is greater than or equal to N/3 and less than or equal to N-1; and dispersing the nanocrystal with thecore-shell structure in a solution containing organic phosphine, and carrying out heating treatment.

Description

technical field [0001] The invention belongs to the technical field of preparation of nanocrystalline materials, in particular to a method for preparing nanocrystals with a core-shell structure. Background technique [0002] Nanoscience and nanotechnology are emerging science and technology and have potential application value and economic benefits, so they have attracted the attention of scientists all over the world. Compared with bulk materials, nanocrystals (NCs) can exhibit very interesting phenomena mainly depending on their electrical, optical, magnetic, and electrochemical properties (which cannot be realized by corresponding bulk materials). Semiconductor nanocrystals, also known as quantum dots (QD), have a size range from 1 to 10nm. When the particle size changes, the band gap valence band and conduction band of semiconductor nanocrystals will also change (quantum size effect), such as CdSe The absorption and emission of nanocrystals cover almost the entire visib...

Claims

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Application Information

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IPC IPC(8): C09K11/02C09K11/88B82Y20/00B82Y30/00B82Y40/00
CPCB82Y20/00B82Y30/00B82Y40/00C09K11/02C09K11/883
Inventor 程陆玲杨一行
Owner TCL CORPORATION
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