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Silicon-based core-shell structure photovoltaic cell and preparation method thereof

A photovoltaic cell and core-shell structure technology, applied in photovoltaic power generation, circuits, electrical components, etc., can solve the problems of many defect states and low photoelectric conversion efficiency, and achieve the effects of reducing defect states, improving photoelectric conversion efficiency, and low temperature

Active Publication Date: 2018-08-17
苏州宝澜环保科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

In the existing organic-inorganic hybrid photovoltaic cells, there are many defect states at the contact interface between the n-type silicon wafer and the PEDOT:PSS layer, which leads to the recombination of electrons and holes, resulting in low photoelectric conversion efficiency.

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  • Silicon-based core-shell structure photovoltaic cell and preparation method thereof

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preparation example Construction

[0024] A method for preparing a silicon-based core-shell structure photovoltaic cell proposed in a specific embodiment of the present invention comprises the following steps:

[0025] (1) preparing a silicon nanowire array on the upper surface of an N-type single crystal silicon wafer, and then soaking in an HF solution to remove the natural silicon oxide on the surface of a single silicon nanowire in the silicon nanowire array;

[0026] (2) Preparation of the first interface modification layer: the upper surface of the N-type single crystal silicon wafer obtained in step (1) is spin-coated with the first mixed solution containing hafnium isobutoxide and P3HT, wherein in the first mixed solution The concentration of hafnium isobutoxide is 0.3-0.5mg / ml, the concentration of P3HT is 1-1.5mg / ml, the rotation speed of spin coating is 5500-6000 rpm, and then the first annealing treatment is performed to form the first Interface modification layer;

[0027] (3) Preparation of the s...

Embodiment 1

[0036] A method for preparing a silicon-based core-shell structure photovoltaic cell, comprising the following steps:

[0037] (1) preparing a silicon nanowire array on the upper surface of an N-type single crystal silicon wafer, and then soaking in an HF solution to remove the natural silicon oxide on the surface of a single silicon nanowire in the silicon nanowire array;

[0038](2) Preparation of the first interface modification layer: the upper surface of the N-type single crystal silicon wafer obtained in step (1) is spin-coated with the first mixed solution containing hafnium isobutoxide and P3HT, wherein in the first mixed solution The concentration of hafnium isobutoxide is 0.4 mg / ml, the concentration of P3HT is 1.2 mg / ml, the rotation speed of spin coating is 5800 rpm, and then the first annealing treatment is performed to form the first interface modification layer;

[0039] (3) Preparation of the second interface modification layer: the upper surface of the N-type ...

Embodiment 2

[0048] A method for preparing a silicon-based core-shell structure photovoltaic cell, comprising the following steps:

[0049] (1) preparing a silicon nanowire array on the upper surface of an N-type single crystal silicon wafer, and then soaking in an HF solution to remove the natural silicon oxide on the surface of a single silicon nanowire in the silicon nanowire array;

[0050] (2) Preparation of the first interface modification layer: the upper surface of the N-type single crystal silicon wafer obtained in step (1) is spin-coated with the first mixed solution containing hafnium isobutoxide and P3HT, wherein in the first mixed solution The concentration of hafnium isobutoxide is 0.5 mg / ml, the concentration of P3HT is 1 mg / ml, the rotation speed of spin coating is 6000 rpm, and then the first annealing treatment is performed to form the first interface modification layer;

[0051] (3) Preparation of the second interface modification layer: the upper surface of the N-type s...

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Abstract

The invention relates to a silicon-based core-shell structure photovoltaic cell and a preparation method thereof. The method includes the steps: preparing a silicon nanowire array on the upper surfaceof a single crystal silicon wafer; preparing a first interface modified layer; preparing a second interface modified layer; preparing a first PEDOT (polymer ethylenedioxy thiophene):PSS (polystyrenesulfonate) layer; preparing a second PEDOT:PSS layer; performing thermal evaporation of metal silver on the whole surface of the second PEDOT:PSS layer; preparing a front gate electrode; preparing a back electrode. By improving the structure and the preparation process of the silicon-based core-shell structure photovoltaic cell, the photoelectric conversion efficiency of the silicon-based core-shell structure photovoltaic cell is effectively improved.

Description

technical field [0001] The invention relates to the technical field of photovoltaic cells, in particular to a photovoltaic cell with a silicon-based core-shell structure and a preparation method thereof. Background technique [0002] In the preparation process of the existing organic-inorganic hybrid photovoltaic cells, the silicon nanowire array is usually prepared on the surface of the n-type silicon wafer by metal-catalyzed chemical etching, and then the n-type silicon wafer is methylated to form Si -CH 3 bond to passivate the silicon surface, and then spin-coat PEDOT:PSS solution on the front side of the n-type silicon wafer and perform annealing treatment to form a PEDOT:PSS layer, then evaporate a silver gate electrode on the front side of the n-type silicon wafer and place it on the n-type silicon wafer The back electrode is vapor-deposited on the back to form a conventional organic-inorganic hybrid photovoltaic cell. In the existing organic-inorganic hybrid photovo...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/42H01L51/48
CPCH10K71/12H10K30/10Y02E10/549
Inventor 张军
Owner 苏州宝澜环保科技有限公司
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