The invention discloses a
field effect transistor gas sensor taking an air gap as an
insulation layer and a preparation method. The preparation method mainly comprises the following steps of: spin-
coating an organic
insulation layer on an electric conducting substrate to serve as a device supporting layer, and
etching a part of the device supporting layer to prepare an air gap groove; placing a micro-nano
crystal above the air gap; and preparing source and drain electrodes of the device by utilizing a gold plate pasting
electrode method or a photoetching technology, wherein the air gap between the micro-nano
crystal and a grid
electrode at the bottom of the groove is taken as a grid
electrode insulation layer of the device. According to the
field effect transistor gas sensor taking the air gap as the insulation layer and the preparation method, disclosed by the invention, the
pollution and the damage to the surface of the nano-
crystal due to the contact of the insulation layer in a preparation process is avoided; the point
discharge effect is avoided favorably, and the stability of the sensor is increased; the success rate for preparing the device is greatly increased, and the device performance is improved; and an electric
conducting channel is directly exposed in gas to be tested, and thus the
field effect transistor gas sensor has a better air-sensitive performance. The
field effect transistor gas sensor disclosed by the invention has the advantages of good stability, high sensitivity,
detection limit reaching ppb (parts per billion) order and high response speed and
recovery speed.