High-uniformity shallow junction diffusion process in low-pressure environment
A low-pressure environment, diffusion process technology, applied in the field of solar cells, can solve the problems of single-chip and whole tube non-uniformity control range, inability to real-time diffusion depth, small square resistance control range, etc., to reduce local poor sintering and facilitate sintering. process, the effect of reducing unit energy consumption
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[0019] Example 1
[0020] Diffusion of cells is carried out according to the following process:
[0021] Unified collection of silicon wafers after traditional acid texturing;
[0022] Lead the silicon wafers into the quartz boat for low-pressure process;
[0023] Purify the furnace tube, time 20s, temperature 780℃, furnace body pressure is normal pressure, gas medium is nitrogen, mass flow rate of large nitrogen is 3000SCCM;
[0024] Enter the boat, the time is 1000s, the temperature is 780℃, the furnace pressure is normal pressure, the gas medium is nitrogen, and the mass flow of large nitrogen is 3000SCCM;
[0025] Constant temperature diffusion, time 400s, temperature 780℃, furnace pressure is normal pressure, gas medium is oxygen and nitrogen, mass flow oxygen is 500SCCM, large nitrogen is 500SCCM, open the source pipeline, source bottle pressure is 500mba, small nitrogen is 800SCCM.
[0026] Constant temperature deposition, time 200s, temperature 800℃, furnace pressure is normal pre...
Example Embodiment
[0036] Example 2
[0037] Diffusion of cells is carried out according to the following process:
[0038] Unified collection of silicon wafers after traditional acid texturing;
[0039] Lead the silicon wafers into the quartz boat for low-pressure process;
[0040] Purify the furnace tube, time 20s, temperature 780℃, furnace body pressure is normal pressure, gas medium is nitrogen, mass flow rate of large nitrogen is 3000SCCM;
[0041] Enter the boat, the time is 1000s, the temperature is 780℃, the furnace pressure is normal pressure, the gas medium is nitrogen, and the mass flow of large nitrogen is 3000SCCM;
[0042] Main vacuum, time 240s, temperature 780℃, furnace pressure is 50mbar;
[0043] Leak detection, time 60s, temperature 780℃, furnace pressure 50mbar;
[0044] Vacuum, time 40s, temperature 780℃, furnace pressure 50mbar;
[0045] Constant temperature diffusion, time 400s, temperature 780℃, furnace pressure 50mbar, oxygen 500SCCM, large nitrogen 500SCCM, open the source pipeline, ...
Example Embodiment
[0065] Example 3
[0066] Diffusion of cells is carried out according to the following process:
[0067] Unified collection of silicon wafers after traditional acid texturing;
[0068] Lead the silicon wafers into the quartz boat for low-pressure process;
[0069] Purify the furnace tube, time 20s, temperature 780℃, furnace body pressure is normal pressure, gas medium is nitrogen, mass flow rate of large nitrogen is 3000SCCM;
[0070] Enter the boat, the time is 1000s, the temperature is 780℃, the furnace pressure is normal pressure, the gas medium is nitrogen, and the mass flow of large nitrogen is 3000SCCM;
[0071] Main vacuum, time 240s, temperature 780℃, furnace pressure 100mbar;
[0072] Leak detection, time 60s, temperature 780℃, furnace pressure 100mbar;
[0073] Vacuum, time 40s, temperature 780℃, furnace pressure 100mbar;
[0074] Constant temperature diffusion, time 400s, temperature 780℃, furnace pressure 100mbar, oxygen 500SCCM, large nitrogen 500SCCM, open the source pipeline,...
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