Crystal silicon and silicon carbide film compound unijunction PIN solar battery with transition layer, and preparation method thereof

A solar cell and transition layer technology, which is applied in circuits, photovoltaic power generation, electrical components, etc., can solve the problems that no one has developed a single-junction PIN solar cell manufacturing method, and no one has developed a thin-film solar cell manufacturing technology.

Active Publication Date: 2015-04-08
湖南共创光伏科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, before the patent number ZL200910044772.4, no one has used a series of six materials with different energy gaps to form a thin-film solar cell with a single-junction multi-layer PIN structure, and no one has developed and prepared this single-junction multi-layer PIN Structured thin-film solar cell manufacturing technology, and no one has developed such a high-conversion silicon crystal and thin-film composite single-junction PIN solar cell and its manufacturing method.

Method used

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  • Crystal silicon and silicon carbide film compound unijunction PIN solar battery with transition layer, and preparation method thereof
  • Crystal silicon and silicon carbide film compound unijunction PIN solar battery with transition layer, and preparation method thereof
  • Crystal silicon and silicon carbide film compound unijunction PIN solar battery with transition layer, and preparation method thereof

Examples

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Effect test

Embodiment 1

[0077] Crystalline silicon and silicon carbide film composite single-junction PIN solar cells with a transition layer structure, selected from one of the following solar cell structures:

[0078] 1) Bottom electrode / n layer / n-type silicon wafer / transition layer / i-A-SiC layer / p-A-SiC layer / TCO / anti-reflection film;

[0079] 2) Bottom electrode / n layer / n-type silicon wafer / transition layer / i-μc-SiC layer / i-A-SiC layer / p-A-SiC layer / TCO / anti-reflection film;

[0080] 3) Bottom electrode / n layer / n-type silicon wafer / transition layer / p-A-SiC layer / TCO / anti-reflection film;

[0081] 4) Bottom electrode / n layer / transition layer / n-type silicon wafer / i-A-SiC layer / p-A-SiC layer / TCO / anti-reflection film;

[0082] 5) Bottom electrode / n layer / transition layer / n-type silicon wafer / i-μc-SiC layer / i-A-SiC layer / p-A-SiC layer / TCO / anti-reflection film;

[0083] 6) Bottom electrode / n layer / transition layer / n-type silicon wafer / p-A-SiC layer / TCO / anti-reflection film;

[0084] 7) Bottom electr...

Embodiment 2

[0093] The manufacturing method of the transition layer, such as figure 2 shown, including the following methods:

[0094]The first type: After preliminary cleaning, chemical texturing, chemical or mechanical double-sided polishing of the n-type silicon wafer, the n-type silicon wafer is cleaned again, and the cleaned silicon wafer is pre-hydrogenated and dried. The treatment method is as follows: : Send the silicon wafer to the equipment with a closed chamber, evacuate the atmosphere until the chamber pressure is less than or equal to (≤) 1Pascal; the chamber temperature is controlled between 30°C and 350°C, and hydrogen or a mixture of hydrogen and nitrogen is introduced gas; dry silicon wafers under a hydrogen atmosphere. The purity of hydrogen and nitrogen is greater than or equal to (≥) 99.99%; if a mixed gas is used, the volume ratio of hydrogen and nitrogen is 0.1 to 100 times; the hydrogenation drying time is 1 to 60 minutes. Send the hydrogenated and dried silicon ...

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Abstract

The invention provides a crystal silicon and silicon carbide film compound unijunction PIN solar battery with a transition layer, and a preparation method thereof. According to the solar battery, the front surface of an n-type silicon wafer or the back surface of the n-type silicon wafer or both the front surface and the back surface of the n-type silicon wafer are simultaneously provided with the transition layer, the transition layer has one layer or multiple layers, and one layer of the transition layer is a silicon-enriched oxygen ambient silica layer. The preparation method involves adding a pre-hydrogenation drying processing after the silicon wafer is textured, polished and cleaned and at the same time, adding a post-hydrogenation processing mode after the process of the transition layer is finished. The two methods are used for improving the interface quality and the structure stability. By using the transition layer and using the crystal silicon and silicon carbide film compound battery which is subjected to the pre-hydrogenation drying processing and post-hydrogenation processing and is provided with the transition layer, the battery conversion efficiency can be improved by more than 10% on the basis of the prior arts.

Description

technical field [0001] The invention relates to a crystalline silicon and thin film composite solar cell, in particular to the structural design and manufacturing method of a crystalline silicon and silicon carbide thin film composite single-junction PIN solar cell with a transition layer structure. Background technique [0002] Since the French scientist AE. Becquerel discovered the photoelectric conversion phenomenon in 1839, the first solar cell based on semiconductor selenium was born in 1883. RuSSell obtained the first solar cell patent (US.2,402,662) in 1946, and its photoelectric conversion efficiency was only 1%. It was not until 1954 that Bell Laboratories' research discovered that doped silicon-based materials have high photoelectric conversion efficiency. This research laid the foundation for the modern solar cell industry. In 1958, the Haffman Power Company of the United States installed the first solar panel on a satellite in the United States, and its photoel...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/077H01L31/0216H01L31/0352H01L31/20
CPCH01L31/02167H01L31/0352H01L31/077H01L31/20Y02E10/547Y02P70/50
Inventor 何湘衡李廷凯
Owner 湖南共创光伏科技有限公司
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