Solar cell and preparation method thereof
A technology for solar cells and substrates, applied in circuits, photovoltaic power generation, electrical components, etc., can solve the problems of reducing the photoelectric conversion efficiency of organic-inorganic solar cells, being unable to be applied on a large scale, and taking a long time for methylation treatment. Improve the photoelectric conversion efficiency, increase the contact increase, and the effect of the method is simple and easy to implement
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
preparation example Construction
[0017] A method for preparing a solar cell proposed in a specific embodiment of the present invention comprises the following steps:
[0018] (1) Cleaning of n-type silicon substrates: cut n-type silicon wafers into n-type silicon substrates with a size of 3 cm×3 cm, and then ultrasonically clean the n-type silicon substrates in acetone, ethanol, and deionized water for 10 -15 minutes, then put in concentrated H 2 SO 4 / H 2 o 2 mixed solution and heated to 100-110°C for 50-70 minutes, the concentrated H 2 SO 4 / H 2 o 2 H in the mixed solution 2 SO 4 with H 2 o 2 The volume ratio is 3:1, and then rinse the n-type silicon substrate with deionized water, and dry it with nitrogen for standby;
[0019] (2) Prepare a silicon nanowire array on the upper surface of the n-type silicon substrate: place the n-type silicon substrate obtained in step 1 in a mixed solution of silver nitrate / hydrofluoric acid, wherein the silver nitrate / hydrofluoric acid The molar concentration o...
Embodiment 1
[0026] A method for preparing a solar cell, comprising the steps of:
[0027] (1) Cleaning of n-type silicon substrates: cut n-type silicon wafers into n-type silicon substrates with a size of 3 cm×3 cm, and then ultrasonically clean the n-type silicon substrates in acetone, ethanol, and deionized water for 12 minutes, then put in concentrated H 2 SO 4 / H 2 o 2 mixed solution and heated to 105°C for 70 minutes, the concentrated H 2 SO 4 / H 2 o 2 H in the mixed solution 2 SO 4 with H 2 o 2 The volume ratio is 3:1, and then rinse the n-type silicon substrate with deionized water, and dry it with nitrogen for standby;
[0028] (2) Prepare a silicon nanowire array on the upper surface of the n-type silicon substrate: place the n-type silicon substrate obtained in step 1 in a mixed solution of silver nitrate / hydrofluoric acid, wherein the silver nitrate / hydrofluoric acid The molar concentration of hydrofluoric acid in the acid mixed solution is 4.8mol / l, and the molar c...
Embodiment 2
[0035] A method for preparing a solar cell, comprising the steps of:
[0036] (1) Cleaning of n-type silicon substrates: cut n-type silicon wafers into n-type silicon substrates with a size of 3 cm×3 cm, and then ultrasonically clean the n-type silicon substrates in acetone, ethanol, and deionized water for 15 minutes, then put in concentrated H 2 SO 4 / H 2 o 2 mixed solution and heated to 110°C for 50 minutes, the concentrated H 2 SO 4 / H 2 o 2 H in the mixed solution 2 SO 4 with H 2 o 2 The volume ratio is 3:1, and then rinse the n-type silicon substrate with deionized water, and dry it with nitrogen for standby;
[0037] (2) Prepare a silicon nanowire array on the upper surface of the n-type silicon substrate: place the n-type silicon substrate obtained in step 1 in a mixed solution of silver nitrate / hydrofluoric acid, wherein the silver nitrate / hydrofluoric acid The molar concentration of hydrofluoric acid in the acid mixed solution is 4.8mol / l, and the molar c...
PUM
Property | Measurement | Unit |
---|---|---|
thickness | aaaaa | aaaaa |
thickness | aaaaa | aaaaa |
thickness | aaaaa | aaaaa |
Abstract
Description
Claims
Application Information
- R&D Engineer
- R&D Manager
- IP Professional
- Industry Leading Data Capabilities
- Powerful AI technology
- Patent DNA Extraction
Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.
© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com