High-performance quantum dot white light LED and preparing method thereof

A quantum dot, high-performance technology, applied in the field of high-performance quantum dot white light LED and its preparation, can solve the problems of low luminous efficiency and low luminous stability, and achieve the effects of high luminous efficiency, good color rendering and obvious effect

Active Publication Date: 2018-06-01
JILIN UNIV
View PDF8 Cites 4 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The technical problem to be solved by the present invention is to overcome the disadvantages of low luminous stability and low luminous efficiency of traditional quantum dot LEDs. Based on electroluminescent blue LED chips (Sanan Optoelectronics, China), the chip surface is sequentially coated with red light CdSe / CdS / ZnS quantum dot thin film layer and green light-emitting Cu:ZnInS / ZnS / ZnS:Al quantum dot thin film layer; the prepared quantum dot white light LED is suitable for applications requiring low color temperature, high color rendering index, and high luminous efficiency Especially suitable for display and lighting fields that have high requirements for luminous stability

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • High-performance quantum dot white light LED and preparing method thereof
  • High-performance quantum dot white light LED and preparing method thereof
  • High-performance quantum dot white light LED and preparing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0035] Weigh 0.073g (0.4mmol) zinc acetate (Zn(OAc) 2 ), 0.008g (0.04mmol) copper acetate (Cu(OAc) 2 ), 0.117g (0.4mmol) indium acetate (In(OAc) 3 ), 0.102g (3.2mmol) of sulfur powder (S), measure 8.0mL of dodecanethiol (DDT), and 12.0mL of oleylamine (OAm) into a 50mL three-necked flask. The high-purity nitrogen atmosphere in the bottle is guaranteed by repeated vacuuming and nitrogen ventilation. Then, the mixed solution was heated from room temperature to 220° C. at a heating rate of 15° C. / min and kept for 10 min to grow Cu:ZnInS nuclei. Subsequently, the temperature was lowered to 100°C, and the zinc precursor solution (0.146g Zn(OAc) 2 Dissolved in 1.6mL ODE and 0.4mL OAm) and maintained for 20min, followed by injection of aluminum precursor (4mmol (0.816g) aluminum isopropoxide (Al(IPA) 3 ) was dissolved in 2mL DDT). Finally, the mixed solution was heated from room temperature to 240 °C at a heating rate of 15 °C / min and kept for 10 h. Add 5mL methanol and 5mL chl...

Embodiment 2

[0038] Weigh 0.128g (1mmol) cadmium oxide (CdO), 0.267g (2mmol) Zn (OAc) 2 , Measure 5mL of OA, and 25mL of octadecene (ODE) into a 50mL three-necked flask. The high-purity nitrogen atmosphere in the bottle was ensured by repeated vacuuming and nitrogen ventilation, and the mixed solution was heated from room temperature to 300 °C at a heating rate of 15 °C / min, and the selenium precursor solution (0.016g (0.2 mmol) selenium powder (Se) was dissolved in 0.2 mL trioctylphosphine (TOP) solution). After the reaction was carried out for 2.5 min, 0.3 mL of DDT was slowly injected into the reaction solution, and kept at 300° C. for 20 min to grow CdSe / CdZnS quantum dots. Finally, the S precursor solution (2mmol S dissolved in 1mL TOP) was injected into the mixed solution and kept for 10min to grow the ZnS shell to obtain CdSe / CdS / ZnS quantum dots. Add 5mL of methanol and 5mL of acetone to the obtained quantum dot solution, precipitate under the action of a centrifuge at 5000rpm, a...

Embodiment 3

[0041] Get 2mL (100mg / mL) Cu in embodiment 1:ZnInS / ZnS / ZnS:Al quantum dot solution and 1mL (0.8mg / mL) CdSe / CdS / ZnS quantum dot solution in embodiment 2 join in filling 1.2g silica gel Put resin A in a glass bottle, stir evenly, place in a vacuum oven at 50°C, and heat-treat for 30 minutes to remove the solvent. Subsequently, 0.6 g of silicone resin B curing agent was added to the solution and stirred evenly. Finally, 20 μL of the obtained quantum dot / silicone resin mixture was drop-coated on the ultrasonically cleaned silicon wafer, cured in air at room temperature for 2 h, and then dried in a vacuum oven at 80 ° C for 2 h. The obtained device was designated as sample A (green + red), the thickness of the quantum dot film is about 20 μm, and its luminous decay curve is measured. The obtained curve is as Figure 5 As shown in the middle green + red (open square), the luminous lifetime is summarized in Table 1. From the table, it is found that the lifetime of Cu:ZnInS / ZnS / ZnS:...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

A high-performance quantum dot white light LED and a preparing method thereof belong to the field of semiconductor illumination. The high-performance quantum dot white light LED is based on an electroluminescent blue light LED chip. The high-performance quantum dot white light LED is obtained through successively coating a CdSe/CdS/ZnS quantum dot thin-film layer which emits red light and a Cu:ZnInS/ZnS/ZnS:Al quantum dot thin-film layer that emits green light. According to Cu:ZnInS/ZnS/ZnS:Al quantum dot which emits green light, Al3<+> can be packaged through kernel doped Cu2<+> and an external ZnS housing layer, thereby improving light/thermal stability. The CdSe/CdS/ZnS gradient alloy quantum dot which emits red light supply multiple-housing-layer protection, thereby reducing defects caused by surface crystal lattice mismatch and preventing light degeneration. The coating manner of layered structure can remarkably suppress energy transmission and re-absorption between quantum dots and furthermore improves light emitting efficiency. The prepared quantum dot white light LED is suitable for an occasion wherein low color temperature, high color rendering index and high light emitting efficiency are required, and is particularly suitable for the displaying and illuminating field with relatively high requirement for light emitting stability.

Description

technical field [0001] The invention belongs to the field of semiconductor lighting, and in particular relates to a high-performance quantum dot white light LED and a preparation method thereof. Background technique [0002] In recent years, the battle against environmental protection is being waged across the country and around the world. The reason for this is nothing more than the excessive use of products that are extensively produced, consume a lot of energy, and cause serious pollution. With the enhancement of people's awareness of environmental protection, energy-saving materials have been paid more and more attention by people. Light-emitting diodes (LEDs) set off the third revolution in the lighting industry with their low energy consumption, low heat generation, fast response, long life, and mature industrialization. Generally, there are three ways to prepare down-converted white LEDs: one is to use a blue-light chip to excite the down-conversion material to obtai...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/50
CPCH01L33/502H01L2933/0041
Inventor 韩炜蔡冬尉国栋马天程
Owner JILIN UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap