OLED device and preparation method thereof

A device and inorganic semiconductor technology, applied in the field of QLED devices and their preparation, can solve problems such as limiting the performance of QLED devices, difficulty in hole injection, and carrier imbalance in the QLED light-emitting layer.

Inactive Publication Date: 2018-07-31
GUANGDONG JUHUA PRINTING DISPLAY TECH CO LTD
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Problems solved by technology

[0003] In recent years, through the improvement of quantum dot material synthesis process and the optimization of device structure, the performance of QLED has been greatly improved. However, due to the deep energy level and large ionization potential of quantum dot materials, the existing hole transport layer and There is a large hole injection barrier at the interface between the quantum dot light-emitting layers, which makes the hole injection more difficult, while the relative electron injection is easier, which causes the carrier imbalance in the QLED light-emitting layer, which seriously limits the quality of the QLED. Device performance

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  • OLED device and preparation method thereof
  • OLED device and preparation method thereof

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Embodiment Construction

[0028] In order to facilitate the understanding of the present invention, the following will describe the present invention more fully. However, the present invention can be embodied in many different forms and is not limited to the embodiments described herein. On the contrary, these embodiments are provided to make the understanding of the disclosure of the present invention more thorough and comprehensive.

[0029] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the technical field of the invention. The terms used herein in the description of the present invention are for the purpose of describing specific embodiments only, and are not intended to limit the present invention. As used herein, the term "and / or" includes any and all combinations of one or more of the associated listed items.

[0030] refer to figure 1 , a QLED device in this embodiment, comprising:

[0031] Su...

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Abstract

The invention relates to a QLED device and a preparation method thereof. The QLED device comprises a substrate, an anode, a hole injection layer, an inorganic semiconductor layer, a quantum dot light-emitting layer, an electron injection layer and a cathode which are sequentially arranged in a laminated manner, wherein the hole injection layer is made of metal oxide nanoparticles. The QLED deviceadopts the metal oxide nano to serve as the hole injection layer and introduces an inorganic semiconductor film with the same composition as a quantum dot shell layer between the quantum dot light-emitting layer and the hole transport layer at the same time, thereby ensuring good hole injection performance between the inorganic semiconductor layer and the quantum dot light-emitting layer, and thuseffectively improving the injection transport from the hole injection layer to the inorganic semiconductor film. The stability of the device can be effectively improved by adopting an all-inorganic material to prepare a quantum dot light-emitting diode.

Description

technical field [0001] The invention relates to the field of QLED technology, in particular to a QLED device and a preparation method thereof. Background technique [0002] Semiconductor quantum dots have excellent characteristics such as high light color purity, high luminous quantum efficiency, adjustable luminous color, and long service life. These characteristics make quantum dot light-emitting diodes (QLED) with quantum dot materials as the light-emitting layer have broad application prospects in solid-state lighting, flat panel display and other fields, and have attracted extensive attention from academia and industry. [0003] In recent years, through the improvement of quantum dot material synthesis process and the optimization of device structure, the performance of QLED has been greatly improved. However, due to the deep energy level and high ionization potential of quantum dot materials, the existing hole transport layer and There is a large hole injection barrie...

Claims

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Application Information

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IPC IPC(8): H01L51/50H01L51/56
CPCH10K50/115H10K50/17H10K71/00
Inventor 陈亚文宋晶尧付东
Owner GUANGDONG JUHUA PRINTING DISPLAY TECH CO LTD
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