Process for manufacturing amorphous silicon thin film solar cell

A technology for amorphous silicon thin films and solar cells, applied in sustainable manufacturing/processing, final product manufacturing, metal material coating technology, etc., can solve low electrical conductivity, unstable performance of amorphous silicon solar cells, lattice loss Matching problem

Inactive Publication Date: 2009-10-21
河南新能光伏有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Most amorphous silicon thin film solar cells use p-type amorphous silicon carbon (p-a-SiC:H) as the window layer, and its conductivity is relatively low (about 10 -5 S / cm level); there is a lattice mismatch problem at the p / i heterojunction interface, which causes the increase of interface defect states and increases the recombination of carriers
In addition, the light-induced degradation (S-W) effect of amorphous silicon materials makes the performance of amorphous silicon solar cells unstable and reduces the photoelectric conversion efficiency of amorphous silicon thin film cells.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0018] Single-junction amorphous silicon thin-film solar cells were fabricated in a multi-chamber flat plate capacitive plasma-enhanced chemical vapor deposition system. Vacuum the deposition chamber to a vacuum higher than 1×10 -5 Pa, the deposition temperature is heated to 190°C, and the RF power is 0.4W / cm 2 . The p-layer silicon-carbon film is prepared in the p chamber, and the hydrogen dilution ratio is R=100:1.1 (R=H 2 / SiH 4 ), the flow ratio of silane to methane is 10:1, and the deposition pressure is 100pa to prepare a thin film with a thickness of about 20nm. After the boron-doped silicon carbon layer is prepared, the substrate is transferred to chamber I. The buffer layer and the hydrogenated amorphous silicon intrinsic layer are prepared in the same chamber. The buffer layer is deposited using a high hydrogen dilution ratio R 1 =50(R 1 =H 2 / SiH 4 ) to prepare a non-carbon-doped silicon buffer layer, the deposition temperature is 190°C, and the radio frequen...

Embodiment 2

[0020] Using transparent conductive glass as the substrate, the glass substrate is preheated to 180°C, and then sent to a multi-chamber flat-panel capacitive plasma-enhanced chemical vapor deposition system to prepare single-junction amorphous silicon thin-film solar cells. Vacuum the deposition chamber to a vacuum higher than 1×10 -5 Pa, the deposition temperature is heated to 190°C, and the RF power is 0.4W / cm 2 . The p-layer nano silicon carbon is prepared in the p chamber, and the hydrogen dilution ratio is R=100:1.1 (R=H 2 / SiH 4 ), the flow ratio of silane to methane is 10:1, and the deposition pressure is 100pa to prepare a thin film with a thickness of about 20nm. After the boron-doped silicon carbon layer is prepared, the substrate is transferred to another chamber. The buffer layer and the hydrogenated amorphous silicon intrinsic layer are prepared in the same chamber. The buffer layer is deposited using a high hydrogen dilution ratio R 1 =50(R 1 =H 2 / SiH 4 )...

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Abstract

The invention relates to a process for manufacturing an amorphous silicon thin film solar cell, which belongs to the field of semiconductors. The process comprises the following steps: (a) preparing a p-type silicon-carbon film; (b) preparing a buffer layer; (c) preparing an intrinsic layer; and (d) preparing an n layer. In the preparation of each layer, the band gap width, the a P layer with high conductivity and an interface with low defect concentration are obtained by controlling the dilution ratio of H2 and other process parameters, thus the conversion efficiency of the cell is greatly improved, and the attenuating effect of the cell is reduced.

Description

1. Technical field [0001] The invention relates to a manufacturing process of a solar cell, in particular to a manufacturing process of an amorphous silicon thin film solar cell, and belongs to the field of semiconductors. 2. Background technology [0002] The demand for energy in the world has led to the rapid development of solar cell technology. At present, the mature and mainstream technologies in the market are mainly monocrystalline silicon and polycrystalline silicon solar cells, but due to the cost limit caused by the shortage of silicon materials and the environment in the process of producing crystalline The problem is that amorphous silicon thin-film solar cells have the advantages of less consumables, environmental friendliness, and greater room for cost reduction. Scientific research and production units have taken amorphous silicon solar cells as the main direction of research and development. [0003] The structure of amorphous silicon solar cells is mainly p-...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/20C23C16/44C23C16/24C23C14/34C23C14/22
CPCY02P70/50
Inventor 孙福河任永平王恩忠王晖胡军田张文晴秦霄海
Owner 河南新能光伏有限公司
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