GIGS solar cell with double buffer layers

Abstract

The invention discloses a GIGS solar cell with double buffer layers. The GIGS solar cell sequentially comprises a stainless steel substrate, a Ti layer, a first Mo layer, a MoNa layer, a second Mo layer, a copper-indium-gallium-selenium layer, a nano silicon oxide layer, a cadmium sulfide layer, a first zinc oxide layer, a second zinc oxide layer and an Ag layer from top to bottom. According to the CIGS battery prepared by adopting the method, the SiOx / CdS double buffer layers are adopted, the SiOx / CdS double buffer layers have a better passivation effect on the surface of the CIGS thin film,the parallel resistance of devices is increased, and the leakage current of the battery is reduced, so that the open-circuit voltage and the battery efficiency of the battery are effectively improved;and moreover, the thickness of the toxic film CdS is reduced, and the development of a Cd-free CIGS thin-film battery is further facilitated.

Description

technical field [0001] The invention relates to the technical field of GIGS (copper indium gallium selenide) solar cells, in particular to a double buffer layer GIGS solar cell. Background technique [0002] Copper indium gallium selenide (CIGS) thin-film solar cells have the advantages of low cost, high efficiency, low-light power generation, etc., and are recognized as one of the promising solar cells. Its general structure is substrate / Mo / CIGS / CdS / IZO / AZO, CIGS solar cell is a heterojunction solar cell structure, CIGS is a P-type material, and CdS (cadmium sulfide) is an N-type material. For heterojunction solar cells, the interface state has a great influence on the performance of the cell. Therefore, in order to obtain high efficiency, a heterojunction interface with high quality and low defect states is crucial. [0003] At present, the polycrystalline grain size of the CIGS film in the light-absorbing layer of CIGS solar cells is about 1-2um, and in industrial produc...

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Problems solved by technology

[0003] At present, the polycrystalline grain size of the CIGS film in the light-absorbing layer of CIGS solar cells is about 1-2um, and in industrial production, a high deposition rate is required, so the uniformity and flatness of the prepared CIGS film are relatively poor. It is one of the reasons why the efficiency of CIGS batteries after mass production is often lower than that in the experimental stage

In addition, the thickness of the N-type material CdS is usually about 50nm, so when the roughness of the CIGS absorbing layer is large, the growth of the CdS film will be uneven, and many island-like regions will be generated, so that the CdS film cannot completely cover the entire CIGS absorber. The surface of the layer, resulting in a large leakage current in the subsequent preparation of the current, reducing the performance of the solar cell

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