Copper nanometer wire-based copper-copper bonding process

A technology of copper nanowires and copper-copper bonding, applied in semiconductor devices, electrical components, circuits, etc., can solve problems such as damage to devices, high thermal stress and thermal deformation, and achieve protection of devices, lower temperature and pressure, and controllability strong effect

Inactive Publication Date: 2015-05-20
HUAZHONG UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, in order to promote the diffusion of copper atoms and obtain higher bonding strength, it is necessary to provide highe

Method used

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  • Copper nanometer wire-based copper-copper bonding process
  • Copper nanometer wire-based copper-copper bonding process
  • Copper nanometer wire-based copper-copper bonding process

Examples

Experimental program
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Example Embodiment

[0042] Example 1

[0043] The copper-copper bonding process based on copper nanowires includes the following steps:

[0044] (1) Use magnetron sputtering to sputter a layer of adhesion layer Ti and seed layer Au on the clean wafer surface successively, the thickness is 20nm and 50nm respectively.

[0045] (2) Spin-coating PR1-4000A positive photoresist with a thickness of 5μm on the surface of the seed layer, using a pattern mask containing area array circular holes, the circular hole area is transparent, the diameter of the circular hole is 5μm, and the center distance of the circular hole The diameter is 10μm, the MA6 contact lithography machine is used for photolithography, and the RD6 developer is used for development, and then rinsed with deionized water and dried with a nitrogen gun.

[0046] (3) Put the pattern obtained by photolithography into a copper plating bath for electroplating. The copper plating bath uses SYSB2210 bump copper plating bath from Xinyang Company. The elec...

Example Embodiment

[0052] Example 2

[0053] The copper-copper bonding process based on copper nanowires includes the following steps:

[0054] (1) Use magnetron sputtering to sputter a layer of adhesion layer TiW and seed layer Au on the clean wafer surface successively, with thicknesses of 50nm and 100nm respectively.

[0055] (2) Spin-coating PR1-12000A positive photoresist with a thickness of 20μm on the surface of the seed layer, using a pattern mask with area array circular holes, the circular hole area is transparent, the diameter of the circular hole is 20μm, and the center distance of the circular hole The thickness is 80μm, and MA6 contact lithography machine is used for photolithography, and RD6 developer is used for development, then rinsed with deionized water and dried with a nitrogen gun.

[0056] (3) Put the pattern obtained by photolithography into a copper plating bath for electroplating. The copper plating bath uses Xinyang's SYSB2210 bump copper plating bath with a plating current de...

Example Embodiment

[0062] Example 3

[0063] The copper-copper bonding process based on copper nanowires includes the following steps:

[0064] (1) Use magnetron sputtering to sputter a layer of adhesion layer Ti and seed layer Cu on the clean wafer surface successively, with thicknesses of 100nm and 200nm, respectively.

[0065] (2) Spin-coating NR26-25000P negative photoresist with a thickness of 30μm on the surface of the seed layer, using a pattern mask with a circular hole around it, the hole area is opaque, the diameter of the hole is 50μm, and the center of the hole The distance is 200μm, the MA6 contact lithography machine is used for photolithography, and the RD6 developer is used for development, and then rinsed with deionized water and dried with a nitrogen gun.

[0066] (3) Put the pattern obtained by photolithography into a copper plating bath for electroplating. The copper plating bath uses Xinyang's SYSB2210 bump copper plating bath with a plating current density of 10 ASD to obtain coppe...

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Abstract

The invention discloses a copper nanometer wire-based copper-copper bonding process. An adhesion layer and a seed layer are sequentially precipitated on the surface of a substrate; a layer of photoresist is prepared on the seed layer, and a round hole is formed in the photoresist; copper is electroplated in the round hole to obtain a copper convex point; a Cu(OH)2 nanometer wire is grown on the surface of the copper convex point by a hydrothermal method; the residual photoresist is removed; the Cu(OH)2 nanometer wire is subjected to thermal decomposition to obtain a CuO nanometer wire; the CuO nanometer wire is reduced to obtain a copper nanometer wire; the copper nanometer wire is prepared on two substrates respectively by the steps, and the copper nanometer wires on the two substrates are bonded in a hot pressing way. The copper nanometer wires are prepared by reduction and are directly applied to subsequent bonding, an additional oxide layer removing step is avoided, a compact bonding layer can be obtained at relatively low temperature and pressure, the preparation process is simple, complex equipment is not required, the cost is low, and the bonding process has very high application value.

Description

technical field [0001] The invention belongs to the technical field of micro-nano manufacturing, and more specifically relates to a copper-copper bonding process based on copper nanowires. Background technique [0002] The continuous development of microelectronics has followed Moore's Law for the past few decades. However, with the reduction of the feature size of electronic devices and the improvement of chip integration, the chip feature size has approached the physical limit, and the products produced by traditional two-dimensional integration technology can no longer solve the problems of interconnection delay and power consumption increase. Resulting performance and cost issues. With the continuous improvement of IC chip performance requirements, such as function enhancement, size reduction, energy consumption and cost reduction, etc., microelectronic packaging technology is developing towards high density and high I / O pin count, based on TSV via holes and high-densit...

Claims

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Application Information

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IPC IPC(8): H01L21/60H01L21/603
CPCH01L24/83H01L2224/11
Inventor 廖广兰独莉史铁林谭先华宿磊陈鹏飞沈俊杰汤自荣
Owner HUAZHONG UNIV OF SCI & TECH
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