Copper nanometer wire-based copper-copper bonding process

Abstract

The invention discloses a copper nanometer wire-based copper-copper bonding process. An adhesion layer and a seed layer are sequentially precipitated on the surface of a substrate; a layer of photoresist is prepared on the seed layer, and a round hole is formed in the photoresist; copper is electroplated in the round hole to obtain a copper convex point; a Cu(OH)2 nanometer wire is grown on the surface of the copper convex point by a hydrothermal method; the residual photoresist is removed; the Cu(OH)2 nanometer wire is subjected to thermal decomposition to obtain a CuO nanometer wire; the CuO nanometer wire is reduced to obtain a copper nanometer wire; the copper nanometer wire is prepared on two substrates respectively by the steps, and the copper nanometer wires on the two substrates are bonded in a hot pressing way. The copper nanometer wires are prepared by reduction and are directly applied to subsequent bonding, an additional oxide layer removing step is avoided, a compact bonding layer can be obtained at relatively low temperature and pressure, the preparation process is simple, complex equipment is not required, the cost is low, and the bonding process has very high application value.

Description

technical field [0001] The invention belongs to the technical field of micro-nano manufacturing, and more specifically relates to a copper-copper bonding process based on copper nanowires. Background technique [0002] The continuous development of microelectronics has followed Moore's Law for the past few decades. However, with the reduction of the feature size of electronic devices and the improvement of chip integration, the chip feature size has approached the physical limit, and the products produced by traditional two-dimensional integration technology can no longer solve the problems of interconnection delay and power consumption increase. Resulting performance and cost issues. With the continuous improvement of IC chip performance requirements, such as function enhancement, size reduction, energy consumption and cost reduction, etc., microelectronic packaging technology is developing towards high density and high I / O pin count, based on TSV via holes and high-densit...

AI Technical Summary

Problems solved by technology

However, in order to promote the diffusion of copper atoms and obtain higher bonding strength, it is necessary to provide higher temperature and pressure, which may introduce higher thermal stress and thermal deformation, and even damage the bonded device

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