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Chemical mechanical polishing material for barrier layer

A chemical mechanical and polishing slurry technology, which is applied in the fields of polishing compositions containing abrasives, electrical components, semiconductor/solid-state devices, etc., can solve the problems of unreasonable substrate polishing selectivity, overall corrosion, high defect rate, etc., and achieve defect Decrease, prevent local and general corrosion, reduce the effect of removal rate

Active Publication Date: 2007-05-02
ANJI MICROELECTRONICS (SHANGHAI) CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
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AI Technical Summary

Problems solved by technology

However, these polishing slurries have defects such as local and overall corrosion, high defect rate, and unreasonable polishing selectivity for different substrates.

Method used

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  • Chemical mechanical polishing material for barrier layer
  • Chemical mechanical polishing material for barrier layer
  • Chemical mechanical polishing material for barrier layer

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1～15 and comparative Embodiment 10

[0024] Remarks: PBTCA: 2-phosphonic acid butyl-1,2,4-tricarboxylic acid, EDTMP: ethylenediaminetetramethylenephosphonic acid, DTPMP: diethylenetriaminepentamethylenephosphonic acid; PAN: ammonium polyacrylate , PAA: polyacrylic acid, PAE: polyacrylic acid-polyacrylate copolymer; the rest of the chemical mechanical polishing slurry is water; 1 0 Refer to Comparative Example 1 0 .

[0025] Put the materials in the following order: abrasive particles, half the amount of deionized water, organic phosphonic acid, polyacrylic acid and / or its copolymer, H 2 o 2 The sequence is added to the reactor in turn and stirred evenly, supplemented with deionized water, and finally with a pH regulator (20% KOH or dilute HNO 3 , select according to the needs of the pH value) adjust to the required pH value, continue to stir until a uniform fluid, and stand still for 10 minutes to obtain the chemical mechanical polishing slurry.

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Abstract

This invention discloses a chemical mechanical polishing starch material that is used for barrier layer. It includes grinded particle, organic Phosphonic acid, polyacrylic acids and / or its salts and / or polyacrylic acids copolymer, oxidizing agent and carrying agent. The chemical mechanical polishing starch material of this invention can prevent corrosion of part or entirety of metallic material, reduce surface contamination of lining bottom, cut down content of grinded bead, raise tantalum removal velocity and cupric removal velocity, thus obtain polishing selectivity of different basal body.

Description

technical field [0001] The invention relates to a chemical mechanical polishing slurry, in particular to a chemical mechanical polishing slurry used for barrier layers. Background technique [0002] With the development of microelectronics technology, the integration of very large scale integrated circuit chips has reached billions of components, and the feature size has entered the nanometer level, which requires hundreds of processes in the microelectronics process, especially multi-layer wiring, Substrates and media must undergo chemical mechanical planarization. VLSI wiring is being transformed from traditional Al to Cu. Compared with Al, Cu wiring has the advantages of low resistivity, high electromigration resistance, and short RC delay time, which can reduce the number of layers by half, reduce the cost by 30%, and shorten the processing time by 40%. The advantages of Cu wiring have attracted worldwide attention. [0003] In order to ensure the characteristics of C...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C08J5/14H01L21/304
CPCC09G1/02H01L21/3212
Inventor 宋伟红荆建芬顾元徐春宋鹰
Owner ANJI MICROELECTRONICS (SHANGHAI) CO LTD
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