Chemical mechanical polishing solution for processing surface of sapphire or carborundum wafer for LED (Light Emitting Diode) substrate slice and preparation method thereof

Abstract

The invention discloses a chemical mechanical polishing solution for processing a surface of a sapphire or carborundum wafer for an LED (Light Emitting Diode) substrate slice. The chemical mechanical polishing solution comprises the following raw materials by weight: 2 to 30% of grinding material, 0.01 to 5% of chelating agent, 0.01 to 10% of surface active agent, 0.01 to 10% of dispersing agent, 0.1 to 20% of oxidant and the balance of deionized water. The preparation method comprises the steps as follows: preparing a grinding material-silica sol; then, sequentially adding the chelating agent, surface active agent, dispersing agent, oxidant and deionized water to the obtained silica sol along with agitating; and continuously uniformly agitating to obtain the chemical mechanical polishing solution for processing the surface of the sapphire or carborundum wafer for the LED substrate slice. The chemical mechanical polishing solution disclosed by the invention can not bring damage, scratching and corrosive pits to the surface of the LED substrate and has no pollution to the environment; the raw materials are cheap, and the cost is low; and the chemical mechanical polishing solution is suitable for industrial production.

Description

technical field [0001] The invention relates to a chemical mechanical polishing liquid, in particular to a chemical mechanical polishing liquid for surface treatment of sapphire or silicon carbide wafers used for LED substrates and a preparation method thereof. Background technique [0002] LED substrates require the surface of the substrate wafer to be ultra-smooth, free of defects and damage, and the surface quality of sapphire and SiC crystal processing will directly affect the performance of the device. However, due to the extremely high hardness of sapphire and SiC crystals, the Mohs hardness is 9 and 9.2 respectively, second only to diamond, making surface processing extremely difficult, and it is difficult to obtain high-quality surfaces with low roughness, which greatly limits their wide application. To prepare high-quality epitaxial wafers, the requirements for the substrate are not only low warpage, low curvature, and small total thickness deviation, but also speci...

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Problems solved by technology

[0005] One of the purposes of the present invention is to provide a chemical mechanical polishing liquid for surface treatment of sapphire or silicon carbide wafers used for LED substrates in order to solve the low efficiency of common polishing liquids and the technical problems of a large amount of damage on the wafer surface

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