Polishing solution for chemically and mechanically polishing cobalt barrier layer structure and applications thereof

A structural chemical and mechanical polishing technology, applied in the field of materials, can solve problems such as poor surface quality, cobalt and copper are easy to corrode, and achieve the effects of reducing removal rate, preventing over-corrosion, and reducing defects

Active Publication Date: 2015-08-12
TSINGHUA UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Both cobalt and copper are highly susceptible to corrosion during current chemical mechanical polishing of cobalt barrier structures, resulting in severe defects after polishing, such as poor surface quality and severe copper interconnect dishing

Method used

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  • Polishing solution for chemically and mechanically polishing cobalt barrier layer structure and applications thereof
  • Polishing solution for chemically and mechanically polishing cobalt barrier layer structure and applications thereof
  • Polishing solution for chemically and mechanically polishing cobalt barrier layer structure and applications thereof

Examples

Experimental program
Comparison scheme
Effect test

experiment example 1

[0044] Polishing fluid formula: 2wt% colloidal silicon dioxide, 1wt% hydrogen peroxide, 0.5wt% glycine, 0.0266wt% methyl-1H-benzotriazole, 0.02wt% polyethylene glycol octane Base phenyl ether and the remaining water, using nitric acid and potassium hydroxide to adjust the pH value to 2.0-12.0;

[0045] Polishing step: During chemical mechanical polishing, such as figure 1 As shown, the polishing liquid is continuously added to the polishing pad at a certain flow rate, and the sample on the polishing head is in contact with the polishing pad under the applied pressure, and the polishing pad and the sample rotate in the same direction to continuously replenish the polishing liquid to the contact area. The surface material is planarized and removed under the synergistic action of the chemical reaction of the polishing fluid and mechanical grinding, thereby achieving local and global planarization. It is worth noting that the above usage method is based on the traditional polishi...

experiment example 2

[0048] Polishing fluid formula: 2wt% colloidal silicon dioxide, 1wt% hydrogen peroxide, 0.5wt% glycine, 0.02wt% polyethylene glycol octylphenyl ether, no metal corrosion inhibitor or 0.0138wt% 1,2,4-triazole or 0.0238wt% benzotriazole or 0.0266wt% methyl-1H-benzotriazole, the balance being water, using nitric acid and potassium hydroxide to adjust the pH value to 8.0;

[0049] Polishing steps: the same as Experimental Example 1.

[0050] The test results show that the removal rate of cobalt and copper materials is significantly reduced after the metal corrosion inhibitor is added, indicating that during the polishing process, the metal corrosion inhibitor can react with the cobalt and copper surface products to form a passivation layer with protective effect. film, prevents over-corrosion during polishing, and reduces cobalt and copper material removal rates. By comparison, it was found that after the addition of methyl-1H-benzotriazole, the removal rate of cobalt and copper ...

experiment example 3

[0052] Polishing fluid formula: 2wt% colloidal silicon dioxide, 1wt% hydrogen peroxide, 0.5wt% glycine, 0.0266wt% methyl-1H-benzotriazole, no surfactant or 0.02wt% non- Ionic surfactant or 0.05wt% nonionic surfactant, the balance is water, and nitric acid and potassium hydroxide are used to adjust the pH value to 8.0. Three different types of nonionic surfactants were tested: polyethylene glycol (molecular weight about 6000), P123 (CAS number: 9003-11-6, produced by BASF, Germany) and polyethylene glycol octylphenyl ether.

[0053] Polishing step: with embodiment 1, test result is shown in table 1 below:

[0054] Table 1

[0055]

[0056] It can be seen that the co-action of metal corrosion inhibitor methyl-1H-benzotriazole and non-ionic surfactant can further reduce the removal rate of cobalt and copper materials, and obtain adjustable cobalt / copper material removal rate selectivity. figure 2 is a schematic cross-sectional view of the cobalt barrier layer structure b...

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Abstract

The invention discloses a polishing solution for chemically and mechanically polishing a cobalt barrier layer structure and applications thereof. The polishing solution comprises the following components in percentage by weight: 0.01 to 20 wt% of grinding particles, 0.01 to 10 wt% of oxidant, 0.01 to 10 wt% of metal complexing agent, 0.005 to 5 wt% of metal corrosion inhibitor, 0.001 to 1 wt% of surfactant, and the balance being water. The polishing solution can form a layer of protective passivation film on the surface of cobalt and copper so as to prevent over-corrosion during the polishing process, can reduce the removal rates of cobalt and copper materials, and obtains the removal rate selectivity of an adjustable material.

Description

technical field [0001] The invention belongs to the technical field of materials, in particular, the invention relates to a polishing liquid for chemical mechanical polishing of a cobalt barrier layer structure and an application thereof. Background technique [0002] With the development of very large-scale integrated circuits, according to Moore's Law, the number of transistors that can be accommodated on an integrated circuit will double every 18 months, and the performance will also double. The number of integration layers of integrated circuits continues to increase, and it is developing in a three-dimensional direction, and the feature size is gradually reduced to 22nm and below. If you continue to use traditional tantalum / tantalum nitride as the barrier layer for copper interconnection, you will face the following challenges: 1 ) The aspect ratio of the copper interconnect trench increases, and there is no guarantee that a uniform copper seed layer can be obtained by ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09G1/02C23F3/04C23F11/14
CPCC09G1/02C23F3/04C23F11/149H01L21/30625
Inventor 江亮雒建斌何永勇
Owner TSINGHUA UNIV
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